公开(公告)号：US09620466B1

公开(公告)日：2017-04-11

申请号：US14953456

申请日：2015-11-30

Applicant: Infineon Technologies AG

Inventor： Martin Mischitz ,  Markus Heinrici ,  Barbara Eichinger ,  Manfred Schneegans ,  Stefan Krivec

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L24/03 ,  H01L21/02203 ,  H01L21/02513 ,  H01L21/76259 ,  H01L23/53238 ,  H01L24/05 ,  H01L2224/0331 ,  H01L2224/0345 ,  H01L2224/03505 ,  H01L2224/03602 ,  H01L2224/03616 ,  H01L2224/0384 ,  H01L2224/05541 ,  H01L2224/05551 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2924/3511 ,  H01L2924/35121

Abstract: A method of manufacturing an electronic device may include: forming at least one electronic component in a substrate; forming a contact pad in electrical contact with the at least one electronic component; wherein forming the contact pad includes: forming a first layer over the substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface, wherein the second layer has a lower porosity than the first layer.