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    RF amplifier with dual frequency response capacitor
    11.
    发明授权
    RF amplifier with dual frequency response capacitor 有权

    公开(公告)号：US10236833B2

    公开(公告)日：2019-03-19

    申请号：US15667195

    申请日：2017-08-02

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou ,  Bjoern Herrmann

    IPC: H03F3/14 ,  H03F1/56 ,  H03F3/195 ,  H01L23/66

    Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

    RF Amplifier with Dual Frequency Response Capacitor
    12.
    发明申请
    RF Amplifier with Dual Frequency Response Capacitor 审中-公开

    公开(公告)号：US20190044483A1

    公开(公告)日：2019-02-07

    申请号：US15667195

    申请日：2017-08-02

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou ,  Bjoern Herrmann

    IPC: H03F1/56 ,  H03F3/195 ,  H01L23/66

    Abstract: An RF package includes a metal flange, an RF input lead, an RF output lead, and an electrically conductive die attach area. An RF transistor that is configured to amplify an RF signal is mounted in the die attach area. The RF transistor includes an input terminal that is electrically coupled to the RF input lead, an output terminal that is electrically coupled to the RF output lead, and a reference potential terminal that is electrically connected to the die attach area. A first capacitor having one or more upper metal plates, and a dielectric region is mounted in the die attach area and is electrically coupled to the RF transmission path of the RF signal. The first capacitor is configured to simultaneously match an impedance of the RF transistor at a fundamental frequency of the RF signal and to filter a higher order harmonic of the fundamental frequency.

    LC network for a power amplifier with selectable impedance
    13.
    发明授权
    LC network for a power amplifier with selectable impedance 有权

    公开(公告)号：US10050591B2

    公开(公告)日：2018-08-14

    申请号：US15078298

    申请日：2016-03-23

    Applicant: Infineon Technologies AG

    Inventor： Saurabh Goel ,  Richard Wilson ,  Haedong Jang

    IPC: H03F3/19 ,  H03F3/21 ,  H03F1/56

    Abstract: An amplifier is configured to amplify an RF signal as between an input terminal and an output terminal across a wideband frequency range. A first LC network is connected to the input terminal and has first and second reactive components. A first switching device is connected between the first and second reactive components and couples both the first and second reactive components to the input terminal in an ON state, and disconnects the second reactive component from the input terminal in an OFF state. A second LC network is connected to the output terminal and has third and fourth reactive components. A second switching device is connected between the third and fourth reactive components and couples both the third and fourth reactive components to the output terminal in an ON state and disconnects the fourth reactive component from the output terminal in an OFF state.

    Reflection type phase shifter with active device tuning
    16.
    发明授权
    Reflection type phase shifter with active device tuning 有权

    公开(公告)号：US10181833B2

    公开(公告)日：2019-01-15

    申请号：US15460297

    申请日：2017-03-16

    Applicant: Infineon Technologies AG

    Inventor： Bayaner Arigong ,  Richard Wilson ,  Haedong Jang ,  Frank Trang ,  Timothy Canning ,  Rongguo Zhou

    IPC: H03H7/20 ,  H01L29/78 ,  H03H7/18 ,  H03H7/19

    Abstract: A phase shifter includes first and second RF terminals, a reference potential terminal; a lumped element LC network connected to the first and second RF terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element LC network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. The lumped element LC network presents a reactance across the first and second RF terminals that shifts the phase of an RF signal as between the first and second RF terminals. The first and second active semiconductor devices are configured to tune the phase shift of the RF signal by controlling the reactance across the first and second RF terminals.

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