公开(公告)号：US11302635B2

公开(公告)日：2022-04-12

申请号：US16920448

申请日：2020-07-03

Applicant: Innolux Corporation

Inventor： Tang Chin Hung ,  Chin-Lung Ting ,  Chung-Kuang Wei ,  Ker-Yih Kao ,  Tong-Jung Wang ,  Chih-Yung Hsieh ,  Hao Jung Huang ,  I-Yin Li ,  Chia-Chi Ho ,  Yi Hung Lin ,  Cheng-Hsu Chou ,  Chia-Ping Tseng

IPC: H01L23/528 ,  H01L27/06 ,  H01L23/522 ,  H01L21/8234 ,  H01L29/93 ,  H01L23/538 ,  H01L21/60

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

公开(公告)号：US10720708B2

公开(公告)日：2020-07-21

申请号：US15657345

申请日：2017-07-24

Applicant: InnoLux Corporation

Inventor： Huei-Ying Chen ,  I-Yin Li ,  Chia-Chi Ho ,  Hsu-Kuan Hsu ,  Ker-Yih Kao ,  Chung-Kuang Wei ,  Chin-Lung Ting ,  Cheng-Chi Wang ,  Chien-Hsing Lee

IPC: H01Q9/06 ,  H01Q1/38 ,  H01Q9/04 ,  G06F1/16 ,  H01L21/762 ,  H04B7/155

Abstract: An antenna device includes a first dielectric substrate, a first radiator disposed on the first dielectric substrate, a second dielectric substrate disposed on the first radiator, a second radiator disposed between the first dielectric substrate and the second dielectric substrate, a main radiator, disposed on the second dielectric substrate, and a modulation structure located between a first radiation portion of the first radiator and a second radiation portion of the second radiator. The first radiation portion, the modulation structure, and the second radiation portion are located in a central area.

公开(公告)号：US12300624B2

公开(公告)日：2025-05-13

申请号：US17722412

申请日：2022-04-18

Applicant: Innolux Corporation

Inventor： Jen-Hai Chi ,  Yun-Sheng Chen ,  Chia-Chi Ho

IPC: H01L23/538 ,  H01L23/367 ,  H01L23/498 ,  H01L25/16 ,  H01L23/00

Abstract: The disclosure provides an electronic device which includes a substrate structure, a driving component, and a conductive pattern. The driving component and the conductive pattern are formed on the substrate structure, and the thickness of the conductive pattern is greater than or equal to 0.5 μm and less than or equal to 15 μm.

公开(公告)号：US12015027B2

公开(公告)日：2024-06-18

申请号：US17851047

申请日：2022-06-28

Applicant: Innolux Corporation

Inventor： Tang Chin Hung ,  Chin-Lung Ting ,  Chung-Kuang Wei ,  Ker-Yih Kao ,  Tong-Jung Wang ,  Chih-Yung Hsieh ,  Hao Jung Huang ,  I-Yin Li ,  Chia-Chi Ho ,  Yi Hung Lin ,  Cheng-Hsu Chou ,  Chia-Ping Tseng

IPC: H01L27/06 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/93 ,  H01L23/538

CPC classification number: H01L27/0629 ,  H01L21/823475 ,  H01L23/5223 ,  H01L29/93 ,  H01L23/5385 ,  H01L27/0694

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

公开(公告)号：US20230052081A1

公开(公告)日：2023-02-16

申请号：US17876508

申请日：2022-07-28

Applicant: Innolux Corporation

Inventor： Shun-Yuan Hu ,  Chia-Chi Ho

IPC: H01L25/16 ,  H01L23/00 ,  H01L21/683

Abstract: Disclosed are an electronic device and a manufacturing method of an electronic device. The manufacturing method includes the following. A first substrate is provided. The first substrate includes a plurality of chips. A second substrate is provided. A transfer process is performed to sequentially transfer a first chip and a second chip among the chips to the second substrate. The second chip is adjacent to the first chip. A first angle is between a first extension direction of a first side of the first chip and an extension direction of a first boundary of the second substrate. A second angle is between a second extension direction of a second side of the second chip and the extension direction of the first boundary of the second substrate. The first angle is different from the second angle.

公开(公告)号：US20230026864A1

公开(公告)日：2023-01-26

申请号：US17844744

申请日：2022-06-21

Applicant: Innolux Corporation

Inventor： Chia-Chi Ho ,  Jen-Hai Chi ,  Chin-Lung Ting

IPC: H01L25/16 ,  H01L23/10 ,  H01L23/00 ,  H01L23/16

Abstract: Provided is an electronic device including a substrate, a first metal layer, an electronic component, a cover layer, and an adhesive layer. The first metal layer is formed on the substrate. The electronic component is disposed on the substrate and electrically connected to the first metal layer. The adhesive layer is adhered to the substrate and the cover layer.

公开(公告)号：US20220181257A1

公开(公告)日：2022-06-09

申请号：US17678040

申请日：2022-02-23

Applicant: Innolux Corporation

Inventor： Tang Chin Hung ,  Chin-Lung Ting ,  Chung-Kuang Wei ,  Ker-Yih Kao ,  Tong-Jung Wang ,  Chih-Yung Hsieh ,  Hao Jung Huang ,  I-Yin Li ,  Chia-Chi Ho ,  Yi Hung Lin ,  Cheng-Hsu Chou ,  Chia-Ping Tseng

IPC: H01L23/528 ,  H01L27/06 ,  H01L23/522 ,  H01L21/8234 ,  H01L29/93

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

公开(公告)号：US20210050657A1

公开(公告)日：2021-02-18

申请号：US16932862

申请日：2020-07-20

Applicant: Innolux Corporation

Inventor： Yi Hung Lin ,  Chung-Kuang Wei ,  Tang Chin Hung ,  I-Yin Li ,  Chia-Chi Ho

IPC: H01Q1/38 ,  H01Q1/40

Abstract: An antenna device is provided, including a first substrate, a first conductive element, a second substrate, a second conductive element, and an insulating layer. The first conductive element is disposed on the first substrate to define, on the first substrate, a recessed region adjacent to the first conductive element. The second substrate faces the first substrate. The second conductive element is disposed on the second substrate and located between the first substrate and the second substrate. The insulating layer is disposed between the first substrate and the second substrate. In a top view of the antenna device, the second conductive element overlaps the first conductive element and the recessed region, and the insulating layer at least partially overlaps the recessed region.

公开(公告)号：US10707152B2

公开(公告)日：2020-07-07

申请号：US15844907

申请日：2017-12-18

Applicant: InnoLux Corporation

Inventor： Ming-Yen Weng ,  Ker-Yih Kao ,  Chia-Chi Ho ,  Tsutomu Shinozaki ,  Cheng-Chi Wang ,  I-Yin Li

IPC: H01L23/66 ,  H01L21/48 ,  H01L23/485 ,  H01L21/311 ,  H01L25/065 ,  H01Q1/38

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.

公开(公告)号：US10461412B2

公开(公告)日：2019-10-29

申请号：US15906126

申请日：2018-02-27

Applicant: InnoLux Corporation

Inventor： I-Yin Li ,  Yi-Hung Lin ,  Chia-Chi Ho ,  Li-Wei Sung ,  Ming-Yen Weng ,  Hung-I Tseng ,  Kuo-Chun Lo ,  Charlene Su ,  Ker-Yih Kao

IPC: H01Q1/00 ,  H01Q1/40 ,  H01Q3/44 ,  H01Q9/04 ,  H01Q13/10 ,  H01Q1/38 ,  H01Q1/50 ,  H01Q1/22 ,  H01Q1/24 ,  G02F1/13

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.