公开(公告)号：US20180308981A1

公开(公告)日：2018-10-25

申请号：US15943731

申请日：2018-04-03

Applicant: InnoLux Corporation

Inventor： Chih-Hao Wu ,  Li-Wei Sung

IPC: H01L29/786 ,  H01L27/146

CPC classification number: H01L27/14658 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/14612 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/78696

Abstract: A sensor device is provided and includes a first transistor, a second transistor, a third transistor, and a photosensor. The first transistor has a first gate, a first drain, and a first source. The first drain is coupled to a first power line and has a concave surface, and the first source is disposed corresponding to the concave surface. The second transistor has a second source, coupled to the first gate. The third transistor has a third gate, a third drain, and a third source, the third drain is coupled to the first source, the third source is coupled to the data line, and the third gate is coupled to the readout line. The photosensor is coupled to the first gate.

公开(公告)号：US09978880B2

公开(公告)日：2018-05-22

申请号：US15585627

申请日：2017-05-03

Applicant: InnoLux Corporation

Inventor： Jung-Fang Chang ,  Chih-Hao Wu ,  Chao-Hsiang Wang ,  Yi-Ching Chen

IPC: H01L29/786 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L23/538 ,  H01L29/423 ,  G02F1/1345 ,  G02F1/1333 ,  G02F1/136 ,  H01L27/32

CPC classification number: H01L29/78696 ,  G02F1/13452 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13606 ,  G02F2001/136236 ,  H01L23/538 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A display device is disclosed, which includes: a substrate; a first conductive layer disposed on the substrate and including a gate with a gate edge parallel to a first direction; a semiconductor layer disposed on the first conductive layer; and a second conductive layer disposed on the semiconductor layer and including a drain and a data line extending along the first direction, the second conductive layer electrically connecting to the semiconductor layer, the drain including a drain edge parallel to the first direction, the gate edge located between the data line and the drain edge, and a projection of the drain on the substrate located in a projection of the semiconductor layer on the substrate. Herein, a maximum width of the semiconductor layer overlapping the gate edge along the first direction is smaller than maximum widths thereof overlapping the gate and the drain edge along the first direction.

公开(公告)号：US09575190B2

公开(公告)日：2017-02-21

申请号：US14063018

申请日：2013-10-25

Applicant: InnoLux Corporation

Inventor： Chih-Hao Wu

IPC: G01T1/20

CPC classification number: G01T1/2018

Abstract: The present invention relates to a flat panel X-ray detector, which comprises a thin film transistor (TFT) substrate; a photoelectric detecting layer, which is disposed on and electrically connected with the TFT substrate, wherein the photoelectric detecting layer comprises a plurality of photoelectric detecting units and a plurality of light absorption units, and the light absorption unit is disposed between spaces adjacent to the photoelectric detecting unit; a Scintillation layer, which is disposed on the photoelectric detecting layer; and a reflective layer, which is disposed on the Scintillation layer.

Abstract translation: 本发明涉及一种平板X射线检测器，它包括薄膜晶体管（TFT）基片; 光电检测层，其设置在TFT基板上并与TFT基板电连接，其中光电检测层包括多个光电检测单元和多个光吸收单元，并且光吸收单元设置在与光电检测单元相邻的空间之间 检测单元 闪烁层，其设置在光电检测层上; 以及设置在闪烁层上的反射层。

公开(公告)号：US11686866B2

公开(公告)日：2023-06-27

申请号：US17379969

申请日：2021-07-19

Applicant: InnoLux Corporation

Inventor： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC: G01T1/24 ,  H01L27/146

CPC classification number: G01T1/241 ,  G01T1/247 ,  H01L27/14614

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US20200371260A1

公开(公告)日：2020-11-26

申请号：US15930452

申请日：2020-05-13

Applicant: InnoLux Corporation

Inventor： Zhi-Hong Wang ,  Hsin-Hung Lin ,  Chih-Hao Wu

IPC: G01T1/24 ,  H01L27/146

Abstract: A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.

公开(公告)号：US09684214B2

公开(公告)日：2017-06-20

申请号：US14669557

申请日：2015-03-26

Applicant: InnoLux Corporation

Inventor： Jung-Fang Chang ,  Chih-Hao Wu ,  Chao-Hsiang Wang ,  Yi-Ching Chen

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L29/417 ,  H01L23/538 ,  H01L27/112 ,  H01L29/423 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1345 ,  G02F1/1333 ,  G02F1/136

CPC classification number: H01L29/78696 ,  G02F1/13452 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133388 ,  G02F2001/13606 ,  G02F2001/136236 ,  H01L23/538 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates to a display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and partially covering the first conductive layer; and a second conductive layer disposed on a top surface of the semiconductor layer; and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer; wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance.

公开(公告)号：US08907339B2

公开(公告)日：2014-12-09

申请号：US14084878

申请日：2013-11-20

Applicant: InnoLux Corporation

Inventor： Chih-Hao Wu

IPC: H01L29/12 ,  H01L27/12 ,  H01L31/08

CPC classification number: H01L27/1225 ,  G01T1/241 ,  H01L27/124 ,  H01L27/14603 ,  H01L27/14663 ,  H01L31/085

Abstract: An X-ray detector including a thin film transistor (TFT) substrate and a photo-diode array layer is disclosed. Each thin film transistor in the TFT substrate includes: a substrate; a gate-electrode on the substrate; a gate insulating layer on the gate-electrode; a semiconductor layer on the gate insulating layer, wherein a portion of the semiconductor layer covers the gate-electrode; an etching stop layer covering the semiconductor layer; a source-electrode and a drain-electrode respectively disposed on the etching stop layer, wherein the source-electrode and the drain-electrode are respectively electrically connected to the semiconductor layer through conductive via-holes each having a base portion at the semiconductor layer, and at least one of the projection areas of the base portions vertically projected on the substrate has a non-overlapping region beyond the projection area of the gate-electrode vertically projected on the substrate; and a passivation layer covering the source-electrode and the drain-electrode.

Abstract translation: 公开了一种包括薄膜晶体管（TFT）基板和光电二极管阵列层的X射线检测器。 TFT基板中的各薄膜晶体管包括：基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 在所述栅极绝缘层上的半导体层，其中所述半导体层的一部分覆盖所述栅电极; 覆盖半导体层的蚀刻停止层; 分别设置在所述蚀刻停止层上的源电极和漏电极，其中所述源电极和所述漏电极分别通过在所述半导体层处具有基部的导电通孔而与所述半导体层电连接， 并且垂直投影在基板上的基部的投影区域中的至少一个具有超过垂直投影在基板上的栅电极的投影区域的非重叠区域; 以及覆盖源电极和漏电极的钝化层。