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公开(公告)号：US20210399411A1
公开(公告)日：2021-12-23
申请号：US17462461
申请日：2021-08-31
Applicant: InnoLux Corporation
Inventor： Yi-Hung LIN , Tang-Chin HUNG , Chia-Chi HO , I-Yin LI
Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a first insulating structure, a second substrate, a second conductive layer and a liquid-crystal layer. The first conductive layer is disposed on the first substrate. The first insulating structure is disposed on the first conductive layer, and the first insulating structure includes a first region and a second region. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The thickness of the first region is less than the thickness of the second region, and at least a portion of the first region is disposed in an overlapping region of the first conductive layer and the second conductive layer.
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公开(公告)号：US20200091596A1
公开(公告)日：2020-03-19
申请号：US16543798
申请日：2019-08-19
Applicant: InnoLux Corporation
Inventor： Yi-Hung LIN , Chih-Chi CHEN , Tang-Chin HUNG , I-Yin LI
IPC: H01Q1/36
Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a second substrate, a liquid-crystal layer, a buffer layer, and an alignment layer. The first conductive layer is disposed on the first substrate, and the first conductive layer has an opening. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The buffer layer is disposed in the opening and adjacent to an overlapping region of the first conductive layer and the second conductive layer. The alignment layer is disposed between the first conductive layer and the liquid-crystal layer.
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公开(公告)号：US20190013574A1
公开(公告)日：2019-01-10
申请号：US16026171
申请日：2018-07-03
Applicant: InnoLux Corporation
Inventor： I-Yin LI , Chin-Lung TING , Chia-Chi HO , Yi-Hung LIN
Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 μm, and less than the thickness of the sealing element.
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公开(公告)号：US20180205148A1
公开(公告)日：2018-07-19
申请号：US15869786
申请日：2018-01-12
Applicant: InnoLux Corporation
Inventor： I-Yin LI , Chia-Chi HO , Chin-Lung TING , Yan-Zheng WU
CPC classification number: H01Q3/44 , H01Q7/00 , H01Q9/16 , H01Q9/27 , H04B1/034 , H04B7/0404 , H04B13/00
Abstract: A microwave modulation device includes a first radiator; a second radiator disposed on the first radiator; a third radiator disposed on the second radiator; a support structure disposed between the first radiator and the second radiator; and a modulation structure disposed between the second radiator and the third radiator. A microwave-transmission layer is located among the space defined by the first radiator, the second radiator, and the support structure. The microwave-transmission layer is gas, substantially vacuum, liquid or insulating material.
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公开(公告)号：US20240405414A1
公开(公告)日：2024-12-05
申请号：US18806879
申请日：2024-08-16
Applicant: InnoLux Corporation
Inventor： Yi-Hung LIN , Tang-Chin HUNG , Chia-Chi HO , I-Yin LI
Abstract: An electronic device is provided. The electronic device includes a substrate and a plurality of units disposed on the substrate. A portion of the plurality of units includes a conductive layer and an insulating layer. The conductive layer has a first opening penetrating through the conductive layer. The insulating layer is disposed on the conductive layer and includes a second opening penetrating through the insulating layer. The first opening of the conductive layer and the second opening of the insulating layer are at least partially overlapped. Moreover, a width of the first opening of the conductive layer is greater than a width of the second opening of the insulating layer.
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Patent Agency Ranking
公开(公告)号：US20210399412A1
公开(公告)日：2021-12-23
申请号：US17462516
申请日：2021-08-31
Applicant: InnoLux Corporation
Inventor： I-Yin LI , Yi-Hung LIN , Chin-Lung TING , Tang-Chin HUNG , Jeng-Nan LIN
Abstract: An antenna device is provided, which includes a first substrate, and a second substrate facing and spaced with the first substrate in a distance. At least one working element disposed between the first substrate and the second substrate, wherein the at least one working element is filled with a modulation material. At least one buffer element is connected with the at least one working element for adjusting the amount of the modulation material in the at least one working element.
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公开(公告)号：US20200294891A1
公开(公告)日：2020-09-17
申请号：US16891916
申请日：2020-06-03
Applicant: InnoLux Corporation
Inventor： Ming-Yen WENG , Ker-Yih KAO , Chia-Chi HO , Tsutomu SHINOZAKI , Cheng-Chi WANG , I-Yin LI
IPC: H01L23/485 , H01L21/311 , H01L23/66 , H01L25/065 , H01L21/48 , H01Q1/38
Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.
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公开(公告)号：US20200281068A1
公开(公告)日：2020-09-03
申请号：US16878675
申请日：2020-05-20
Applicant: Innolux Corporation
Inventor： Yan-Syun WANG , Chi-Che TSAI , Wei-Yen WU , I-Yin LI
Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.
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公开(公告)号：US20200036081A1
公开(公告)日：2020-01-30
申请号：US16246663
申请日：2019-01-14
Applicant: InnoLux Corporation
Inventor： I-Yin LI , Tang-Chin HUNG
IPC: H01Q1/22 , H01L23/552 , H01L23/498 , H01L23/66
Abstract: An antenna device is provided. The antenna device includes a first substrate and a second substrate facing the first substrate. The first substrate includes an inner surface and an outer surface opposite the inner surface of the first substrate. The second substrate includes an inner surface and an outer surface opposite the inner surface of the second substrate. The antenna device also includes a die disposed between the first substrate and the second substrate, a redistribution layer disposed between the die and the inner surface of the second substrate, and an antenna unit electrically connected to the die via the redistribution layer. The antenna unit is arranged on at least one of the inner surface of the first substrate, the outer surface of the first substrate, the inner surface of the second substrate and the outer surface of the second substrate.
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公开(公告)号：US20190013277A1
公开(公告)日：2019-01-10
申请号：US16000312
申请日：2018-06-05
Applicant: InnoLux Corporation
Inventor： Yi-Hung LIN , Chin-Lung TING , Chia-Chi HO , I-Yin LI
IPC: H01L23/532 , H01L29/43 , H04B1/08 , H04B1/03
Abstract: A radiation device includes a transistor substrate. A first transistor, a second transistor, a first electrode pad, a second electrode pad, a first conductive line, and a second conductive line are disposed on the transistor substrate. The first electrode pad is disposed adjacent to the first transistor, the second electrode pad is disposed adjacent to the second transistor, the first transistor is electrically connected to the first electrode pad through the first conductive line, and the second transistor is electrically connected to the second electrode pad through the second conductive line. The distance between the first transistor and the first electrode pad is shorter than the distance between the second transistor and the second electrode pad. The ratio of the total area of the first conductive line and the total area of the second conductive line is between 0.8 and 1.2.
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