公开(公告)号：US20230004090A1

公开(公告)日：2023-01-05

申请号：US17939328

申请日：2022-09-07

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US11537048B2

公开(公告)日：2022-12-27

申请号：US16987120

申请日：2020-08-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  C23C14/08 ,  G03F7/38 ,  C23C16/40 ,  G03F7/004 ,  C23C16/455 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20200209756A1

公开(公告)日：2020-07-02

申请号：US16810924

申请日：2020-03-06

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: G03F7/42 ,  H01L21/67 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004

Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

公开(公告)号：US09823564B2

公开(公告)日：2017-11-21

申请号：US14858612

申请日：2015-09-18

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0043 ,  G03F7/0042 ,  G03F7/20 ,  G03F7/327 ,  Y10T428/24355

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US20250004365A1

公开(公告)日：2025-01-02

申请号：US18428593

申请日：2024-01-31

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US20240280897A1

公开(公告)日：2024-08-22

申请号：US18634119

申请日：2024-04-12

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US11988959B2

公开(公告)日：2024-05-21

申请号：US17705795

申请日：2022-03-28

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20230143592A1

公开(公告)日：2023-05-11

申请号：US17982013

申请日：2022-11-07

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers

IPC: G03F7/004

CPC classification number: G03F7/0042 ,  G03F7/0048

Abstract: An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001 M to about 0.5 M. The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organotin precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.

公开(公告)号：US11500284B2

公开(公告)日：2022-11-15

申请号：US17085024

申请日：2020-10-30

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20220334487A1

公开(公告)日：2022-10-20

申请号：US17858129

申请日：2022-07-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20 ,  C23C14/08 ,  G03F7/38 ,  C23C16/455 ,  G03F7/40 ,  G03F7/32 ,  C23C16/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.