公开(公告)号：US20220064192A1

公开(公告)日：2022-03-03

申请号：US17410316

申请日：2021-08-24

Applicant: Inpria Corporation

Inventor： Joseph B. Edson ,  Brian J. Cardineau ,  William Earley ,  Kierra Huihui-Gist ,  Thomas J. Lamkin ,  Robert E. Jilek

IPC: C07F7/22

Abstract: Synthesis reactions are described to efficiently and specifically form compounds of the structure RSnL3, where R is an organic ligand to the tin, and L is hydrolysable ligand or a hydrolysis product thereof. The synthesis is effective for a broad range of R ligands. The synthesis is based on the use of alkali metal ions and optionally alkaline earth (pseudo-alkaline earth) metal ions. Compounds are formed of the structures represented by the formulas RSn(C≡CSiR′3)3, R′R″ACSnL3, where A is a halogen atom (F, Cl, Br or I) or an aromatic ring with at least one halogen substituent, R′R″(R′″O)CSnL3 or R′R″(N≡C)CSnZ3.

公开(公告)号：US11098070B2

公开(公告)日：2021-08-24

申请号：US16194491

申请日：2018-11-19

Applicant: Inpria Corporation

Inventor： Brian J. Cardineau ,  Stephen T. Meyers ,  Kai Jiang ,  William Earley ,  Jeremy T Anderson

IPC: G03F7/00 ,  C07F7/22 ,  G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organotin clusters are described with the formula R3Sn3(O2CR′)5-x(OH)2+x(μ3-O) with 0≤x

公开(公告)号：US20200326627A1

公开(公告)日：2020-10-15

申请号：US16845511

申请日：2020-04-10

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Brian J. Cardineau ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Stephen T. Meyers ,  Michael Kocsis ,  Amrit K. Narasimhan

IPC: G03F7/32 ,  G03F7/42 ,  G03F7/20 ,  G03F7/40 ,  G03F7/16

Abstract: Developer compositions are described based on blends of solvents, in which the developers are particularly effective for EUV patterning using organometallic based patterning compositions. Methods for use of these developing compositions are described. The blends of solvents can be selected based on Hansen solubility parameters. Generally, one solvent has low polarity as express by the sum of δP+δH, and a second solvent component of the developer has a higher value of δP+δH. Corresponding solvent compositions are described.

公开(公告)号：US20200209756A1

公开(公告)日：2020-07-02

申请号：US16810924

申请日：2020-03-06

Applicant: Inpria Corporation

Inventor： Mollie Waller ,  Brian J. Cardineau ,  Kai Jiang ,  Alan J. Telecky ,  Stephen T. Meyers ,  Benjamin L. Clark

IPC: G03F7/42 ,  H01L21/67 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004

Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

公开(公告)号：US20240280897A1

公开(公告)日：2024-08-22

申请号：US18634119

申请日：2024-04-12

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US11988959B2

公开(公告)日：2024-05-21

申请号：US17705795

申请日：2022-03-28

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20240094632A1

公开(公告)日：2024-03-21

申请号：US18521779

申请日：2023-11-28

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Stephen T. Meyers ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Benjamin L. Clark ,  Dominick Smiddy ,  Margaret Wilson-Moses

IPC: G03F7/004 ,  B05D1/00 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F7/0043 ,  B05D1/005 ,  G03F7/168 ,  G03F7/20

Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.

公开(公告)号：US11500284B2

公开(公告)日：2022-11-15

申请号：US17085024

申请日：2020-10-30

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US20220334487A1

公开(公告)日：2022-10-20

申请号：US17858129

申请日：2022-07-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20 ,  C23C14/08 ,  G03F7/38 ,  C23C16/455 ,  G03F7/40 ,  G03F7/32 ,  C23C16/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20220187705A1

公开(公告)日：2022-06-16

申请号：US17689135

申请日：2022-03-08

Applicant: Inpria Corporation

Inventor： Kai Jiang ,  Stephen T. Meyers ,  Lauren B. McQuade ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Benjamin L. Clark ,  Dominick Smiddy ,  Margaret Wilson-Moses

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/16

Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.