公开(公告)号：US20130130179A1

公开(公告)日：2013-05-23

申请号：US13739375

申请日：2013-01-11

Applicant: JSR CORPORATION

Inventor： Yusuke ANNO ,  Takashi MORI ,  Satoshi DEI ,  Kazunori TAKANASHI ,  Yushi MATSUMURA ,  Shin-ya MINEGISHI

IPC: G03F7/075

CPC classification number: G03F7/0757 ,  C08K5/34 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/20 ,  H01L21/02126 ,  H01L21/02216 ,  C08L83/04

Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Abstract translation: 聚硅氧烷组合物包括聚硅氧烷和第一化合物。 第一化合物包括含氮杂环结构，极性基团，酯基或其组合。 图案形成方法包括将聚硅氧烷组合物涂覆在待加工的基材上以提供含硅膜。 将抗蚀剂组合物涂覆在含硅膜上以提供抗蚀剂涂膜。 通过光掩模选择性地用放射线照射抗蚀剂涂膜以暴露抗蚀剂涂膜。 曝光的抗蚀剂涂层被显影以形成抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次对含硅膜和待处理基板进行干蚀刻。