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    METHOD FOR PRODUCING 1,3-BUTADIENE
    1.
    发明申请
    METHOD FOR PRODUCING 1,3-BUTADIENE 有权

    公开(公告)号：US20220340506A1

    公开(公告)日：2022-10-27

    申请号：US17639529

    申请日：2020-08-26

    Applicant: JSR Corporation ,  ENEOS Corporation

    Inventor： Junjie WANG ,  Yuichiro SASAKI ,  Takashi MORI

    IPC: C07C11/167 ,  B01J23/887 ,  C07C5/48

    Abstract: The present invention provides a method for producing 1,3-butadiene that is capable of suppressing generation of reaction by-products. The method includes: a step (A) of to obtain a produced gas containing 1,3-butadiene; a step (B) of cooling the produced gas; and a step (C) of separating the produced gas cooled in the step (B) into molecular oxygen and inert gases, and other gases containing 1,3-butadiene, by selective absorption into an absorption solvent. In the method, in the step (A), the raw material gas and a molecular oxygen-containing gas are supplied to a fixed-bed reactor with a composite oxide catalyst containing molybdenum and bismuth; the molar ratio of molecular oxygen to n-butene in the gases is 1.0 to 2.0; and the molar ratio of water vapor to n-butene in the gases supplied to the fixed-bed reactor is not more than 1.2.

    METHOD FOR PRODUCING 1,3-BUTADIENE
    3.
    发明申请
    METHOD FOR PRODUCING 1,3-BUTADIENE 有权

    公开(公告)号：US20220185746A1

    公开(公告)日：2022-06-16

    申请号：US17653167

    申请日：2022-03-02

    Applicant: JSR Corporation ,  ENEOS Corporation

    Inventor： Junjie WANG ,  Takashi MORI ,  Ryo TANAKA

    IPC: C07C5/48

    Abstract: A method for producing 1,3-butadiene, including: (A) performing an oxidative dehydrogenation reaction between oxygen and a raw material gas including n-butene in the presence of a metal oxide catalyst, thereby obtaining a produced gas containing 1,3-butadiene; (B) washing the produced gas obtained in (A); (C) contacting the produced gas washed in (B) with a cooling medium to cool the produced gas; and (D) separating the produced gas cooled in (C) into molecular oxygen and inert gases, and other gases containing 1,3-butadiene, by selective absorption into an absorption solvent. In (B), the washing of the produced gas includes blowing the produced gas onto a liquid surface of a washing liquid so that the produced gas contacts the liquid surface of the washing liquid.

    RESIST PATTERN-FORMING METHOD
    4.
    发明申请
    RESIST PATTERN-FORMING METHOD 审中-公开
    电阻形成方法

    公开(公告)号：US20150160556A1

    公开(公告)日：2015-06-11

    申请号：US14627670

    申请日：2015-02-20

    Applicant: JSR Corporation

    Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

    IPC: G03F7/16 ,  G03F7/30

    CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

    Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

    RESIST PATTERN-FORMING METHOD
    5.
    发明申请
    RESIST PATTERN-FORMING METHOD 审中-公开
    电阻形成方法

    公开(公告)号：US20140134544A1

    公开(公告)日：2014-05-15

    申请号：US14158160

    申请日：2014-01-17

    Applicant: JSR Corporation

    Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

    IPC: G03F7/20

    CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

    Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

    MULTILAYER RESIST PROCESS PATTERN-FORMING METHOD AND MULTILAYER RESIST PROCESS INORGANIC FILM-FORMING COMPOSITION
    6.
    发明申请
    MULTILAYER RESIST PROCESS PATTERN-FORMING METHOD AND MULTILAYER RESIST PROCESS INORGANIC FILM-FORMING COMPOSITION 有权
    多层耐蚀性图案形成方法和多层耐蚀工艺无机成膜组合物

    公开(公告)号：US20140030660A1

    公开(公告)日：2014-01-30

    申请号：US14038861

    申请日：2013-09-27

    Applicant: JSR CORPORATION

    Inventor： Kazunori TAKANASHI ,  Yoshio TAKIMOTO ,  Takashi MORI ,  Kazuo NAKAHARA ,  Masayuki MOTONARI

    IPC: G03F7/11 ,  G03F7/26

    CPC classification number: G03F7/11 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/26

    Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

    Abstract translation: 多层抗蚀剂工艺图案形成方法包括在衬底上提供无机膜。 在无机膜上设置保护膜。 在保护膜上设置抗蚀剂图案。 通过利用抗蚀剂图案作为掩模的蚀刻在衬底上提供图案。 多层抗蚀剂工艺无机成膜组合物包括化合物，有机溶剂和交联促进剂。 该化合物包括包含可水解基团的金属化合物，包含可水解基团的金属化合物的水解产物，包含可水解基团的金属化合物的水解缩合产物或其组合。 该化合物包括属于元素周期表第6族，第12族或第13族的至少一种金属元素。

    METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION
    10.
    发明申请
    METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION 有权
    形成图案的方法和多晶硅组合物

    公开(公告)号：US20150048046A1

    公开(公告)日：2015-02-19

    申请号：US13629908

    申请日：2012-09-28

    Applicant: JSR Corporation

    Inventor： Satoshi DEI ,  Takashi MORI ,  Kazunori TAKANASHI

    IPC: C08G77/388 ,  B81C1/00

    CPC classification number: B81C1/00396 ,  B81C1/00388 ,  B81C2201/0198 ,  C08G77/14 ,  C08G77/24 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  H05K3/061 ,  H05K2203/05

    Abstract: A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

    Abstract translation: 在多层抗蚀剂工艺中，可以在多层抗蚀剂工艺中一起改进其中利用氟气蚀刻含硅膜和耐氧蚀性的可加工性的图案形成方法，以形成更精细的图案。 提供了一种图案形成方法，其包括以下步骤：（1）使用聚硅氧烷组合物在待处理基板的上表面上提供含硅膜; （2）在含硅膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模对含硅膜进行干蚀刻以形成含硅图案; 和（4）使用含硅图案作为掩模对待处理的基板进行干蚀刻以形成其中聚硅氧烷组合物包含（A）含氟原子的聚硅氧烷和（B）交联促进剂的图案。

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