公开(公告)号：US20130310514A1

公开(公告)日：2013-11-21

申请号：US13948107

申请日：2013-07-22

Applicant: JSR Corporation

Inventor： Shin-ya MINEGISHI ,  Yushi MATSUMURA ,  Shinya NAKAFUJI ,  Kazuhiko KOMURA ,  Takanori NAKANO ,  Satoru MURAKAMI ,  Kyoyu YASUDA ,  Makoto SUGIURA

IPC: G03F7/09

CPC classification number: G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract translation: 抗蚀剂下层膜形成组合物包括含有式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10,000的聚合物和溶剂。 R 3〜R 8各自独立地表示下述式（2）所示的基团等。 R1表示单键等。 R2表示氢原子等。

公开(公告)号：US20130273476A1

公开(公告)日：2013-10-17

申请号：US13852120

申请日：2013-03-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Satoru MURAKAMI ,  Yushi MATSUMURA ,  Kazuhiko KOMURA ,  Yoshio TAKIMOTO ,  Shin-ya NAKAFUJI ,  Kyoyu YASUDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。

公开(公告)号：US20130130179A1

公开(公告)日：2013-05-23

申请号：US13739375

申请日：2013-01-11

Applicant: JSR CORPORATION

Inventor： Yusuke ANNO ,  Takashi MORI ,  Satoshi DEI ,  Kazunori TAKANASHI ,  Yushi MATSUMURA ,  Shin-ya MINEGISHI

IPC: G03F7/075

CPC classification number: G03F7/0757 ,  C08K5/34 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/20 ,  H01L21/02126 ,  H01L21/02216 ,  C08L83/04

Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Abstract translation: 聚硅氧烷组合物包括聚硅氧烷和第一化合物。 第一化合物包括含氮杂环结构，极性基团，酯基或其组合。 图案形成方法包括将聚硅氧烷组合物涂覆在待加工的基材上以提供含硅膜。 将抗蚀剂组合物涂覆在含硅膜上以提供抗蚀剂涂膜。 通过光掩模选择性地用放射线照射抗蚀剂涂膜以暴露抗蚀剂涂膜。 曝光的抗蚀剂涂层被显影以形成抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次对含硅膜和待处理基板进行干蚀刻。