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    RESIST PATTERN-FORMING METHOD
    2.
    发明申请
    RESIST PATTERN-FORMING METHOD 审中-公开
    电阻形成方法

    公开(公告)号：US20150160556A1

    公开(公告)日：2015-06-11

    申请号：US14627670

    申请日：2015-02-20

    Applicant: JSR Corporation

    Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

    IPC: G03F7/16 ,  G03F7/30

    CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

    Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

    RESIST PATTERN-FORMING METHOD
    3.
    发明申请
    RESIST PATTERN-FORMING METHOD 审中-公开
    电阻形成方法

    公开(公告)号：US20140134544A1

    公开(公告)日：2014-05-15

    申请号：US14158160

    申请日：2014-01-17

    Applicant: JSR Corporation

    Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

    IPC: G03F7/20

    CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

    Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
    5.
    发明申请
    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM 审中-公开
    用于形成电阻膜的组合物

    公开(公告)号：US20150197664A1

    公开(公告)日：2015-07-16

    申请号：US14669995

    申请日：2015-03-26

    Applicant: JSR CORPORATION

    Inventor： Shin-ya MINEGISHI ,  Shin-ya Nakafuji ,  Satoru Murakami ,  Toru Kimura

    IPC: C09D161/14

    CPC classification number: C09D161/14 ,  C08K5/42 ,  C08L101/02 ,  G03F7/094 ,  G03F7/11 ,  H01L21/31144

    Abstract: A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring.

    Abstract translation: 用于形成抗蚀剂下层膜的组合物包括（A）化合物。 化合物（A）包括由式（1）表示的基团。 R表示碳原子数为1〜30的1价有机基团。 由R表示的一价有机基团不包括邻近硫原子的一端的氧原子。 *表示粘合手。 化合物（A）优选包括芳香环，杂芳环或其组合的环。 由式（1）表示的基团中由*表示的键合键优选直接或经由氧原子与环连接。

    PATTERN FORMING METHOD
    6.
    发明申请
    PATTERN FORMING METHOD 审中-公开
    图案形成方法

    公开(公告)号：US20140224765A1

    公开(公告)日：2014-08-14

    申请号：US14210803

    申请日：2014-03-14

    Applicant: JSR CORPORATION

    Inventor： Shin-ya MINEGISHI ,  Shin-ya NAKAFUJI ,  Takanori NAKANO

    IPC: B44C1/22

    CPC classification number: B44C1/227 ,  G03F7/091 ,  G03F7/094 ,  G03F7/11 ,  G03F7/168 ,  G03F7/40 ,  H01L21/02118 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/0335 ,  H01L21/0337

    Abstract: A pattern-forming method includes forming a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a base component, and a crosslinking agent. A content of hydrogen atom in the resist underlayer film is from 0 to 50 atom %. The crosslinking agent has a partial structure represented by a following general formula (i). X represents an oxygen atom, a sulfur atom, or —NR—. R represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms. n1 is an integer from 1 to 6. R1 represents a hydrogen atom, an alkyl group having 1 to 9 carbon atoms, or an aryl group having 6 to 30 carbon atoms.

    Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括基础组分和交联剂。 抗蚀剂下层膜中的氢原子的含量为0〜50原子％。 交联剂具有由以下通式（i）表示的部分结构。 X表示氧原子，硫原子或-NR-。 R表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。 n1为1〜6的整数.R1表示氢原子，碳原子数1〜9的烷基或碳原子数6〜30的芳基。

    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD
    10.
    发明申请
    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD 有权
    用于形成电阻膜和图案形成方法的组合物

    公开(公告)号：US20140048512A1

    公开(公告)日：2014-02-20

    申请号：US14061808

    申请日：2013-10-24

    Applicant: JSR CORPORATION

    Inventor： Shin-ya NAKAFUJI ,  Shin-ya MINEGISHI ,  Takanori NAKANO

    IPC: G03F7/09 ,  B44C1/22

    CPC classification number: G03F7/091 ,  B44C1/227 ,  C08G8/20 ,  C08G61/02 ,  C08G2261/314 ,  C08G2261/332 ,  C08G2261/90 ,  G03F7/094 ,  G03F7/30 ,  G03F7/36

    Abstract: A composition for forming a resist underlayer film includes a polymer having a repeating unit represented by a following formula (1), and a solvent. R1 represents a hydroxy group, or the like. n is an integer of 0 to 5. X represents a divalent hydrocarbon group having 1 to 20 carbon atoms or an alkanediyloxy group having 1 to 20 carbon atoms. m is an integer of 1 to 7. A sum of m and n is no greater than 7. R2 represents a single bond or an alkanediyl group having 1 to 4 carbon atoms. R3 represents an alicyclic group having 4 to 20 carbon atoms or an arylene group having 6 to 30 carbon atoms. A part or all of hydrogen atoms included in the alicyclic group or the arylene group represented by R3 are unsubstituted or substituted.

    Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由下式（1）表示的重复单元的聚合物和溶剂。 R1表示羟基等。 n为0〜5的整数.X表示碳原子数1〜20的二价烃基或碳原子数1〜20的烷二氧基。 m为1〜7的整数.m和n之和为7以下。R2为单键或碳原子数1〜4的烷二基。 R 3表示碳原子数4〜20的脂环式基或碳原子数6〜30的亚芳基。 包含在脂环族基团中的部分或全部氢原子或由R3表示的亚芳基是未取代的或取代的。

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