公开(公告)号：US20160097978A1

公开(公告)日：2016-04-07

申请号：US14877357

申请日：2015-10-07

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/32 ,  G03F7/20

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

公开(公告)号：US20130233825A1

公开(公告)日：2013-09-12

申请号：US13787674

申请日：2013-03-06

Applicant: JSR CORPORATION

Inventor： Shunsuke KURITA ,  Kazunori TAKANASHI ,  Hiromitsu NAKASHIMA ,  Tooru KIMURA

IPC: G03F7/09

CPC classification number: G03F7/0757 ,  G03F7/0752 ,  G03F7/094

Abstract: A composition for forming a resist underlayer film includes a polysiloxane and a solvent. The solvent includes an organic solvent having a standard boiling point of no less than 150.0° C., and water. A content of the organic solvent is no less than 1% by mass and no greater than 50% by mass with respect to a total amount of the solvent. A content of water is no less than 1% by mass and no greater than 30% by mass with respect to the total amount of the solvent.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括聚硅氧烷和溶剂。 溶剂包括标准沸点不低于150.0℃的有机溶剂和水。 相对于溶剂的总量，有机溶剂的含量为1质量％以上且50质量％以下。 相对于溶剂的总量，水的含量为1质量％以上且30质量％以下。

公开(公告)号：US20220011672A1

公开(公告)日：2022-01-13

申请号：US17482557

申请日：2021-09-23

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Tomoaki TANIGUCHI ,  Kazunori TAKANASHI

IPC: G03F7/11 ,  C08G8/10 ,  C09D161/06 ,  C07C211/54 ,  C07C39/225 ,  C07D307/36 ,  C07D207/323 ,  C07C39/21

Abstract: The composition contains: a compound which has a group represented by formula (1); and a solvent. In the formula (1), R1 and R2 each independently represent a substituted or unsubstituted aryl group having 6 to 30 ring atoms or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms; R3 represents a hydrogen atom or a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms; and * denotes a bonding site to a part other than the group represented by the following formula (1) in the compound.

公开(公告)号：US20150160556A1

公开(公告)日：2015-06-11

申请号：US14627670

申请日：2015-02-20

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/16 ,  G03F7/30

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

公开(公告)号：US20140134544A1

公开(公告)日：2014-05-15

申请号：US14158160

申请日：2014-01-17

Applicant: JSR Corporation

Inventor： Yusuke ANNO ,  Takashi MORI ,  Hirokazu SAKAKIBARA ,  Taiichi FURUKAWA ,  Kazunori TAKANASHI ,  Hiromitsu TANAKA ,  Shin-ya MINEGISHI

IPC: G03F7/20

CPC classification number: G03F7/16 ,  G03F7/0397 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/094 ,  G03F7/20 ,  G03F7/30 ,  G03F7/325

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract translation: 抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。 将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。 辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。 抗蚀剂膜被曝光。 使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

公开(公告)号：US20140030660A1

公开(公告)日：2014-01-30

申请号：US14038861

申请日：2013-09-27

Applicant: JSR CORPORATION

Inventor： Kazunori TAKANASHI ,  Yoshio TAKIMOTO ,  Takashi MORI ,  Kazuo NAKAHARA ,  Masayuki MOTONARI

IPC: G03F7/11 ,  G03F7/26

CPC classification number: G03F7/11 ,  G03F7/0002 ,  G03F7/094 ,  G03F7/26

Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

Abstract translation: 多层抗蚀剂工艺图案形成方法包括在衬底上提供无机膜。 在无机膜上设置保护膜。 在保护膜上设置抗蚀剂图案。 通过利用抗蚀剂图案作为掩模的蚀刻在衬底上提供图案。 多层抗蚀剂工艺无机成膜组合物包括化合物，有机溶剂和交联促进剂。 该化合物包括包含可水解基团的金属化合物，包含可水解基团的金属化合物的水解产物，包含可水解基团的金属化合物的水解缩合产物或其组合。 该化合物包括属于元素周期表第6族，第12族或第13族的至少一种金属元素。

公开(公告)号：US20220197144A1

公开(公告)日：2022-06-23

申请号：US17689193

申请日：2022-03-08

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Tsubasa ABE ,  Masato DOBASHI ,  Kazunori TAKANASHI

IPC: G03F7/11 ,  C07C13/567 ,  C07C13/62 ,  C07C13/66 ,  C07C69/616 ,  C07D209/08 ,  C07D317/50

Abstract: A composition includes: a compound including an aromatic hydrocarbon ring structure, and a partial structure represented by formula (1) which bonds to the aromatic hydrocarbon ring structure; and a solvent. The aromatic hydrocarbon ring structure has no fewer than 25 carbon atoms. In the formula (1), X represents a group represented by formula (i), (ii), (iii), or (iv); and *'s denote binding sites to two adjacent carbon atoms constituting the aromatic hydrocarbon ring structure. A method of producing a patterned substrate, includes applying the composition directly or indirectly on a substrate to form a resist underlayer film; forming a resist pattern directly or indirectly on the resist underlayer film; and carrying out etching using the resist pattern as a mask.

公开(公告)号：US20200348595A1

公开(公告)日：2020-11-05

申请号：US16947119

申请日：2020-07-20

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Kengo EHARA ,  Tomoaki TANIGUCHI ,  Kazunori TAKANASHI

IPC: G03F7/11 ,  C07D209/50 ,  C07D471/06 ,  C07C233/65 ,  C07D251/54 ,  C07D405/14

Abstract: A composition contains: a compound including at least one group selected from the group consisting of a group represented by formula (1-1), a group represented by formula (1-2), and a group represented by formula (1-3); and a solvent. In formulae (1-1) to (1-3), * and ** each denote a site bonding to a part other than the group represented by the formulae (1-1) to (1-3) in the compound; and a and b are each independently an integer of 0 to 3. In a case in which a is 0, b is no less than 1, and in a case in which a is no less than 1, b is 0.

公开(公告)号：US20200272053A1

公开(公告)日：2020-08-27

申请号：US16871131

申请日：2020-05-11

Applicant: JSR CORPORATION

Inventor： Naoya NOSAKA ,  Yuushi MATSUMURA ,  Hiroki NAKATSU ,  Kazunori TAKANASHI ,  Hiroki NAKAGAWA

IPC: G03F7/11 ,  C09D7/63 ,  C07D251/24 ,  H01L21/027

Abstract: A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic heteroring in Ar1 and represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group. Ar1Ar2R1)n)m   (1)

公开(公告)号：US20180046081A1

公开(公告)日：2018-02-15

申请号：US15672660

申请日：2017-08-09

Applicant: JSR CORPORATION

Inventor： Masayuki MIYAKE ,  Goji WAKAMATSU ,  Tsubasa ABE ,  Kazunori TAKANASHI ,  Kazunori SAKAI

IPC: G03F7/09 ,  G03F7/004 ,  C08G8/20 ,  H01L21/027 ,  H01L21/033 ,  G03F7/11 ,  H01L21/02 ,  H01L21/768

Abstract: A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.