公开(公告)号：US20250110407A1

公开(公告)日：2025-04-03

申请号：US18910163

申请日：2024-10-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Daiki TATSUBO ,  Sho YOSHINAKA ,  Shunpei AKITA ,  Satoshi DEI ,  Eiji YONEDA ,  Kengo EHARA

IPC: G03F7/039 ,  C08F220/30 ,  C08F220/38 ,  C08G61/12 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: A method for manufacturing a semiconductor substrate includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing at least the exposed resist film. The composition for forming a resist underlayer film includes a polymer and a solvent. The polymer includes a repeating unit (1) which includes an organic sulfonic acid anion moiety and an onium cation moiety.

公开(公告)号：US20240288773A1

公开(公告)日：2024-08-29

申请号：US18636755

申请日：2024-04-16

Applicant: JSR CORPORATION

Inventor： Masato DOBASHI ,  Hiroyuki KOMATSU ,  Eiji YONEDA ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/0752 ,  G03F7/322 ,  H01L21/0275

Abstract: A method includes: applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film; applying a composition for forming a resist film to the resist underlayer film to form a resist film; exposing the resist film to radiation; and developing the exposed resist film. The composition for forming a resist underlayer film includes: a polymer including a partial structure represented by formula (i); and a solvent. In the formula (i), Y1 is a sulfonyl group, a carbonyl group, or an alkanediyl group; Y2 is a sulfonyl group, a carbonyl group, or a single bond; when Y1 is an alkanediyl group, Y2 is a sulfonyl group or a carbonyl group, and when Y2 is a single bond, Y1 is a sulfonyl group or a carbonyl group; R1 is a monovalent organic group having 1 to 20 carbon atoms.

公开(公告)号：US20240142876A1

公开(公告)日：2024-05-02

申请号：US18528951

申请日：2023-12-05

Applicant: JSR CORPORATION

Inventor： Hiroyuki MIYAUCHI ,  Satoshi DEI ,  Ryotaro TANAKA ,  Eiji YONEDA ,  Sho YOSHINAKA

IPC: G03F7/11 ,  G03F7/029 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/029 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/327 ,  H01L21/0275

Abstract: A method for manufacturing a semiconductor substrate, includes: directly or indirectly applying a composition for forming a resist underlayer film to a substrate to form a resist under film directly or indirectly on the substrate; applying a composition for forming a resist film to the resist underlayer film to form a resist film on the resist underlayer film; exposing the resist film to radiation; and developing the exposed resist film by a developer. The composition for forming a resist underlayer film includes: a polymer; an onium salt that is capable of generating at least one polar group selected from the group consisting of a carboxy group and a hydroxy group by radiation or heat; and a solvent.

公开(公告)号：US20240255852A1

公开(公告)日：2024-08-01

申请号：US18435001

申请日：2024-02-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Masato DOBASHI ,  Satoshi DEI ,  Kengo EHARA ,  Sho YOSHINAKA ,  Eiji YONEDA ,  Takashi KATAGIRI

IPC: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

CPC classification number: G03F7/11 ,  C08F12/08 ,  C08F12/20 ,  C08F12/24 ,  C08F12/26 ,  C08F12/30 ,  C08F26/06 ,  C09D125/08 ,  C09D125/18 ,  C09D139/04

Abstract: A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

公开(公告)号：US20150048046A1

公开(公告)日：2015-02-19

申请号：US13629908

申请日：2012-09-28

Applicant: JSR Corporation

Inventor： Satoshi DEI ,  Takashi MORI ,  Kazunori TAKANASHI

IPC: C08G77/388 ,  B81C1/00

CPC classification number: B81C1/00396 ,  B81C1/00388 ,  B81C2201/0198 ,  C08G77/14 ,  C08G77/24 ,  C08G77/388 ,  C09D183/08 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/11 ,  H05K3/061 ,  H05K2203/05

Abstract: A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

Abstract translation: 在多层抗蚀剂工艺中，可以在多层抗蚀剂工艺中一起改进其中利用氟气蚀刻含硅膜和耐氧蚀性的可加工性的图案形成方法，以形成更精细的图案。 提供了一种图案形成方法，其包括以下步骤：（1）使用聚硅氧烷组合物在待处理基板的上表面上提供含硅膜; （2）在含硅膜上形成抗蚀剂图案; （3）使用抗蚀剂图案作为掩模对含硅膜进行干蚀刻以形成含硅图案; 和（4）使用含硅图案作为掩模对待处理的基板进行干蚀刻以形成其中聚硅氧烷组合物包含（A）含氟原子的聚硅氧烷和（B）交联促进剂的图案。

公开(公告)号：US20130130179A1

公开(公告)日：2013-05-23

申请号：US13739375

申请日：2013-01-11

Applicant: JSR CORPORATION

Inventor： Yusuke ANNO ,  Takashi MORI ,  Satoshi DEI ,  Kazunori TAKANASHI ,  Yushi MATSUMURA ,  Shin-ya MINEGISHI

IPC: G03F7/075

CPC classification number: G03F7/0757 ,  C08K5/34 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/20 ,  H01L21/02126 ,  H01L21/02216 ,  C08L83/04

Abstract: A polysiloxane composition includes a polysiloxane, and a first compound. The first compound includes a nitrogen-containing heterocyclic ring structure, and a polar group, an ester group or a combination thereof. A pattern-forming method includes coating the polysiloxane composition on a substrate to be processed to provide a silicon-containing film. A resist composition is coated on the silicon-containing film to provide a resist coating film. The resist coating film is selectively irradiated with a radioactive ray through a photomask to expose the resist coating film. The exposed resist coating film is developed to form a resist pattern. The silicon-containing film and the substrate to be processed are sequentially dry etched using the resist pattern as a mask.

Abstract translation: 聚硅氧烷组合物包括聚硅氧烷和第一化合物。 第一化合物包括含氮杂环结构，极性基团，酯基或其组合。 图案形成方法包括将聚硅氧烷组合物涂覆在待加工的基材上以提供含硅膜。 将抗蚀剂组合物涂覆在含硅膜上以提供抗蚀剂涂膜。 通过光掩模选择性地用放射线照射抗蚀剂涂膜以暴露抗蚀剂涂膜。 曝光的抗蚀剂涂层被显影以形成抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次对含硅膜和待处理基板进行干蚀刻。