COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD
    12.
    发明申请
    COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD 审中-公开
    用于形成电阻膜的组合物,电阻膜和电阻膜形成方法,以及图案形成方法

    公开(公告)号:US20150198882A9

    公开(公告)日:2015-07-16

    申请号:US14290744

    申请日:2014-05-29

    CPC classification number: G03F7/0384 B05D3/0254 C08G65/4006 G03F7/094 G03F7/11

    Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.

    Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由式(1)表示的结构单元的聚合物。 Ar 1,Ar 2,Ar 3和Ar 4各自独立地表示二价芳香族烃基或二价杂芳基。 包含在二价芳族烃基中的一部分或全部氢原子和由Ar 1,Ar 2,Ar 3或Ar 4表示的二价杂芳基可以被取代。 R1表示单键或碳原子数1〜20的二价烃基。 包含在由R1表示的二价烃基中的一部分或全部氢原子可以被取代。 由R 1表示的二价烃基的结构可以具有酯基,醚基或羰基。 Y表示羰基或磺酰基。 m为0或1. n为0或1。

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