公开(公告)号：US20170137663A9

公开(公告)日：2017-05-18

申请号：US15059372

申请日：2016-03-03

Applicant: JSR CORPORATION

Inventor： Goji WAKAMATSU ,  Naoya NOSAKA ,  Yuushi MATSUMURA ,  Yoshio TAKIMOTO ,  Tsubasa ABE ,  Toru KIMURA

IPC: C09D161/14 ,  G03F7/36 ,  G03F7/11

CPC classification number: C09D161/14 ,  C08G8/20 ,  C08G8/36 ,  C08G14/04 ,  C08G14/12 ,  C09D161/34 ,  G03F7/11 ,  G03F7/36

Abstract: A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.

公开(公告)号：US20140220783A1

公开(公告)日：2014-08-07

申请号：US14249432

申请日：2014-04-10

Applicant: JSR Corporation

Inventor： Kazuhiko KOUMURA ,  Shinya MINEGISHI ,  Takashi MORI ,  Kyoyu YASUDA ,  Yoshio TAKIMOTO ,  Shinya NAKAFUJI ,  Toru KIMURA

IPC: H01L21/308

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/02164 ,  H01L21/0271 ,  H01L21/033 ,  H01L21/31116 ,  H01L21/31138

Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Abstract translation: 图案形成方法包括使用抗蚀剂下层膜形成组合物在基板上提供抗蚀剂下层膜。 抗蚀剂下层膜形成组合物包括玻璃化转变温度为0至180℃的第一聚合物。在抗蚀剂下层膜的表面上提供硅基氧化物膜。 使用抗蚀剂组合物在硅基氧化膜的表面上设置抗蚀剂图案。 使用抗蚀剂图案作为掩模，依次干蚀刻硅基氧化物膜和抗蚀剂下层膜。 使用干蚀刻抗蚀剂下层膜作为掩模对基板进行干蚀刻。

公开(公告)号：US20140023968A1

公开(公告)日：2014-01-23

申请号：US14037659

申请日：2013-09-26

Applicant: JSR CORPORATION

Inventor： Hiromitsu NAKASHIMA ,  Toru KIMURA ,  Yusuke ASANO ,  Masafumi HORI ,  Reiko KIMURA ,  Kazuki KASAHARA ,  Hiromu MIYATA ,  Masafumi YOSHIDA

IPC: G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0041 ,  C08F220/22 ,  C08F220/24 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/027 ,  H01L21/0274

Abstract: A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film

Abstract translation: 抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物在基板上提供具有30至40mN / m的表面自由能的抗蚀剂膜。 通过经由掩模施加辐射来曝光抗蚀剂膜。 显影出抗蚀剂膜。 优选的是，抗蚀剂膜的曝光包括通过设置在抗蚀剂膜上的浸渍液体曝光抗蚀剂膜

公开(公告)号：US20160257842A1

公开(公告)日：2016-09-08

申请号：US15059372

申请日：2016-03-03

Applicant: JSR CORPORATION

Inventor： Goji WAKAMATSU ,  Naoya NOSAKA ,  Yuushi MATSUMURA ,  Yoshio TAKIMOTO ,  Tsubasa ABE ,  Toru KIMURA

IPC: C09D161/14 ,  G03F7/36 ,  G03F7/11

CPC classification number: C09D161/14 ,  C08G8/20 ,  C08G8/36 ,  C08G14/04 ,  C08G14/12 ,  C09D161/34 ,  G03F7/11

Abstract: A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.

Abstract translation: 组合物包含化合物和溶剂。 该化合物包含含碳 - 碳三键的基团和至少一个具有芳环的部分结构。 在至少一个部分结构中构成芳环的苯核总数不小于4.至少一个部分结构优选包含由式（1）表示的部分结构。 p1，p2，p3和p4的总和优选为1以上.R 1〜R 4中的至少一个优选表示含有一价碳 - 碳三键的基团。 所述至少一种部分结构还优选包含由式（2）表示的部分结构。 q1，q2，q3和q4的总和优选为1以上.R5至R8中的至少一个优选表示含有一价碳 - 碳三键的基团。