公开(公告)号：US20130273476A1

公开(公告)日：2013-10-17

申请号：US13852120

申请日：2013-03-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Satoru MURAKAMI ,  Yushi MATSUMURA ,  Kazuhiko KOMURA ,  Yoshio TAKIMOTO ,  Shin-ya NAKAFUJI ,  Kyoyu YASUDA

IPC: G03F7/004

CPC classification number: G03F7/004 ,  C08G8/08 ,  C08G8/22 ,  C08G8/28 ,  C09D161/06 ,  G03F7/094 ,  G03F7/11 ,  G03F7/26 ,  G03F7/40

Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Abstract translation: 图案形成方法包括：（1）抗蚀剂下层膜形成步骤，通过涂布含有酚羟基的树脂的抗蚀剂下层膜形成组合物，在基材的上表面侧上形成抗蚀剂下层膜; （2）在抗蚀剂下层膜的上表面侧形成抗蚀剂图案的抗蚀剂图案形成工序; （3）借助于抗蚀剂图案作为掩模，至少对抗蚀剂下层膜和基板进行干蚀刻的图案形成步骤，以在基板上形成图案; 以及（4）以（1）〜（4）的顺序用碱性溶液除去基板上的抗蚀剂下层膜的抗蚀剂下层膜除去工序。

公开(公告)号：US20140272722A1

公开(公告)日：2014-09-18

申请号：US14290744

申请日：2014-05-29

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Kazuhiko KOMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/038 ,  B05D3/02

CPC classification number: G03F7/0384 ,  B05D3/0254 ,  C08G65/4006 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由式（1）表示的结构单元的聚合物。 Ar 1，Ar 2，Ar 3和Ar 4各自独立地表示二价芳香族烃基或二价杂芳基。 包含在二价芳族烃基中的一部分或全部氢原子和由Ar 1，Ar 2，Ar 3或Ar 4表示的二价杂芳基可以被取代。 R1表示单键或碳原子数1〜20的二价烃基。 包含在由R1表示的二价烃基中的一部分或全部氢原子可以被取代。 由R 1表示的二价烃基的结构可以具有酯基，醚基或羰基。 Y表示羰基或磺酰基。 m为0或1. n为0或1。

公开(公告)号：US20150198882A9

公开(公告)日：2015-07-16

申请号：US14290744

申请日：2014-05-29

Applicant: JSR CORPORATION

Inventor： Shin-ya NAKAFUJI ,  Satoru MURAKAMI ,  Yoshio TAKIMOTO ,  Kazuhiko KOMURA ,  Masayuki MOTONARI ,  Katsuhisa MIZOGUCHI

IPC: G03F7/038 ,  B05D3/02

CPC classification number: G03F7/0384 ,  B05D3/0254 ,  C08G65/4006 ,  G03F7/094 ,  G03F7/11

Abstract: A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar1, Ar2, Ar3 and Ar4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar1, Ar2, Ar3 or Ar4 may be substituted. R1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R1 may be substituted. The divalent hydrocarbon group represented by R1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.

Abstract translation: 用于形成抗蚀剂下层膜的组合物包括具有由式（1）表示的结构单元的聚合物。 Ar 1，Ar 2，Ar 3和Ar 4各自独立地表示二价芳香族烃基或二价杂芳基。 包含在二价芳族烃基中的一部分或全部氢原子和由Ar 1，Ar 2，Ar 3或Ar 4表示的二价杂芳基可以被取代。 R1表示单键或碳原子数1〜20的二价烃基。 包含在由R1表示的二价烃基中的一部分或全部氢原子可以被取代。 由R 1表示的二价烃基的结构可以具有酯基，醚基或羰基。 Y表示羰基或磺酰基。 m为0或1. n为0或1。

公开(公告)号：US20130341304A1

公开(公告)日：2013-12-26

申请号：US14011781

申请日：2013-08-28

Applicant: JSR CORPORATION

Inventor： Shin-ya MINEGISHI ,  Kazuhiko KOMURA ,  Shin-ya NAKAFUJI ,  Takanori NAKANO

IPC: G03F7/09 ,  G03F7/34

CPC classification number: G03F7/09 ,  C08F220/18 ,  C08L61/06 ,  C08L61/12 ,  G03F7/094 ,  G03F7/34 ,  H01L21/0271 ,  H01L21/31144

Abstract: A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching.

Abstract translation: 抗蚀剂下层膜形成组合物包括玻璃化转变温度（Tg）为0-180℃的聚合物。抗蚀剂下层膜形成组合物用于多层抗蚀剂工艺。 多层抗蚀剂工艺包括在抗蚀剂下层膜的表面上形成硅基氧化物膜，并对硅基氧化物膜进行湿蚀刻。

公开(公告)号：US20130310514A1

公开(公告)日：2013-11-21

申请号：US13948107

申请日：2013-07-22

Applicant: JSR Corporation

Inventor： Shin-ya MINEGISHI ,  Yushi MATSUMURA ,  Shinya NAKAFUJI ,  Kazuhiko KOMURA ,  Takanori NAKANO ,  Satoru MURAKAMI ,  Kyoyu YASUDA ,  Makoto SUGIURA

IPC: G03F7/09

CPC classification number: G03F7/091 ,  C08G8/08 ,  C08L61/06 ,  G03F7/094

Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.

Abstract translation: 抗蚀剂下层膜形成组合物包括含有式（1）所示的重复单元，聚苯乙烯换算的重均分子量为3000〜10,000的聚合物和溶剂。 R 3〜R 8各自独立地表示下述式（2）所示的基团等。 R1表示单键等。 R2表示氢原子等。