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公开(公告)号:US20210389671A1
公开(公告)日:2021-12-16
申请号:US17458783
申请日:2021-08-27
Applicant: JSR CORPORATION
Inventor: Tetsurou KANEKO , Hiromitsu NAKASHIMA , Yuushi MATSUMURA , Junya SUZUKI , Shuto MORI , Hiroyuki ISHII
Abstract: A radiation-sensitive resin composition includes: a first polymer having a first structural unit which includes a phenolic hydroxyl group, and a second structural unit which includes an acid-labile group and a carboxy group which is protected by the acid-labile group; a second polymer having a third structural unit represented by the following formula (S-1), and a fourth structural unit which is a structural unit other than the third structural unit and is represented by the following formula (S-2); and a radiation-sensitive acid generator, wherein the acid-labile group includes a monocyclic or polycyclic ring structure having no fewer than 3 and no more than 20 ring atoms.
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公开(公告)号:US20200272053A1
公开(公告)日:2020-08-27
申请号:US16871131
申请日:2020-05-11
Applicant: JSR CORPORATION
Inventor: Naoya NOSAKA , Yuushi MATSUMURA , Hiroki NAKATSU , Kazunori TAKANASHI , Hiroki NAKAGAWA
IPC: G03F7/11 , C09D7/63 , C07D251/24 , H01L21/027
Abstract: A composition for resist underlayer film formation, includes a compound represented by formula (1) and a solvent. Ar1 represents an aromatic heterocyclic group having a valency of m and having 5 to 20 ring atoms; m is an integer of 1 to 11; Ar2 is a group bonding to a carbon atom of the aromatic heteroring in Ar1 and represents an aromatic carbocyclic group having 6 to 20 ring atoms and having a valency of (n+1) or an aromatic heterocyclic group having 5 to 20 ring atoms and having a valency of (n+1); n is an integer of 0 to 12; and R1 represents a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, a halogen atom, or a nitro group. Ar1Ar2R1)n)m (1)
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公开(公告)号:US20190264035A1
公开(公告)日:2019-08-29
申请号:US16388267
申请日:2019-04-18
Applicant: JSR CORPORATION
Inventor: Shun AOKI , Kang-go CHUNG , Yuushi MATSUMURA , Tomohiro MATSUKI , Yoshio TAKIMOTO
IPC: C09D5/00 , C09D161/06 , C09D161/18 , C09D161/34 , C09D125/06 , C09D161/12 , C09D125/18 , H01L21/02 , H01L21/311
Abstract: A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.
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公开(公告)号:US20170137663A9
公开(公告)日:2017-05-18
申请号:US15059372
申请日:2016-03-03
Applicant: JSR CORPORATION
Inventor: Goji WAKAMATSU , Naoya NOSAKA , Yuushi MATSUMURA , Yoshio TAKIMOTO , Tsubasa ABE , Toru KIMURA
IPC: C09D161/14 , G03F7/36 , G03F7/11
CPC classification number: C09D161/14 , C08G8/20 , C08G8/36 , C08G14/04 , C08G14/12 , C09D161/34 , G03F7/11 , G03F7/36
Abstract: A composition comprises a compound and a solvent. The compound comprises a carbon-carbon triple bond-containing group, and at least one partial structure having an aromatic ring. A total number of benzene nuclei constituting the aromatic ring in the at least one partial structure is no less than 4. The at least one partial structure preferably comprises a partial structure represented by formula (1). The sum of p1, p2, p3 and p4 is preferably no less than 1. At least one of R1 to R4 preferably represents a monovalent carbon-carbon triple bond-containing group. The at least one partial structure also preferably comprises a partial structure represented by formula (2). The sum of q1, q2, q3 and q4 is preferably no less than 1. At least one of R5 to R8 preferably represents a monovalent carbon-carbon triple bond-containing group.
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