公开(公告)号：US20080068668A1

公开(公告)日：2008-03-20

申请号：US11889587

申请日：2007-08-14

申请人： Xuelong Shi ,  Jang Chen ,  Douglas Van Den Broeke

发明人： Xuelong Shi ,  Jang Chen ,  Douglas Van Den Broeke

IPC分类号： G10K7/06

CPC分类号： G03F7/705

摘要： A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.

摘要翻译： 确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。 该方法包括定义与给定成像过程相关联的设计规则的步骤; 定义表示光学成像系统的成像性能的模型方程; 基于设计规则确定成像信号空间的边界; 基于成像信号空间的边界选择校准图案，使得校准图案位于成像信号空间的边界或边界内; 并存储所选择的校准测试图案，其中使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。

公开(公告)号：US20080014509A1

公开(公告)日：2008-01-17

申请号：US11647599

申请日：2006-12-29

申请人： Chung-Wei Hsu ,  Douglas Van Den Broeke ,  Jang Chen

发明人： Chung-Wei Hsu ,  Douglas Van Den Broeke ,  Jang Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36

摘要： A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; determining an interference map based on the process parameters and the target pattern; defining an area of influence which represents the area about a given feature in the target pattern in which scattering bars will be utilized in the mask; and disposing a scattering bar in the mask adjacent the given feature in a location indicated by said interference map only within the area of influence of the given feature.

摘要翻译： 一种将光学邻近校正特征应用于具有包括要成像的多个特征的目标图案的掩模的方法。 该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 基于过程参数和目标模式确定干涉图; 定义影响区域，其表示在掩模中将使用散射条的目标图案中的给定特征的区域; 以及仅在给定特征的影响区域内，在由所述干涉图指示的位置中的与给定特征相邻的掩模中布置散射条。

公开(公告)号：US20050196682A1

公开(公告)日：2005-09-08

申请号：US10981762

申请日：2004-11-05

申请人： Stephen Hsu ,  Jang Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

发明人： Stephen Hsu ,  Jang Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

IPC分类号： G03F1/08 ,  G03B27/72 ,  G03F1/14 ,  G03F7/20 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441

摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.

摘要翻译： 一种生成用于光刻工艺的掩模的方法。 该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。

公开(公告)号：US08111921B2

公开(公告)日：2012-02-07

申请号：US11898646

申请日：2007-09-13

申请人： Duan-Fu Stephen Hsu ,  Jung Chul Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Jung Chul Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06K9/00 ,  G06F17/50 ,  H04N7/16

CPC分类号： G06T7/0004 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70466 ,  G03F7/70475

摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

摘要翻译： 一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。 该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

公开(公告)号：US08040573B2

公开(公告)日：2011-10-18

申请号：US11889587

申请日：2007-08-14

申请人： Xuelong Shi ,  Jang Fung Chen ,  Douglas Van Den Broeke

发明人： Xuelong Shi ,  Jang Fung Chen ,  Douglas Van Den Broeke

IPC分类号： G10K7/06 ,  H04N1/00

CPC分类号： G03F7/705

摘要： A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.

摘要翻译： 确定用于校准用于模拟光学成像系统的成像性能的模型的校准测试图案的方法。 该方法包括定义与给定成像过程相关联的设计规则的步骤; 定义表示光学成像系统的成像性能的模型方程; 基于设计规则确定成像信号空间的边界; 基于成像信号空间的边界选择校准图案，使得校准图案位于成像信号空间的边界或边界内; 并存储所选择的校准测试图案，其中使用校准测试图案来校准用于模拟光学成像系统的成像性能的模型。

公开(公告)号：US07998355B2

公开(公告)日：2011-08-16

申请号：US11822538

申请日：2007-07-06

申请人： Douglas Van Den Broeke ,  Kurt E. Wampler ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Kurt E. Wampler ,  Jang Fung Chen

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： G03F1/32 ,  G03F1/34

摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.

摘要翻译： 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

公开(公告)号：US20110143268A1

公开(公告)日：2011-06-16

申请号：US13032590

申请日：2011-02-22

申请人： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Thomas Laidig ,  Kurt E. Wampler ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36

摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding- the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

摘要翻译： 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要被成像的特征的目标图案，扩展要成像的特征的宽度，修改掩模以包括邻近放置的辅助特征 要成像的特征的边缘，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

公开(公告)号：US20110014552A1

公开(公告)日：2011-01-20

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US07614034B2

公开(公告)日：2009-11-03

申请号：US11594248

申请日：2006-11-08

申请人： Douglas Van Den Broeke ,  Sangbong Park ,  Chung-Wei Hsu ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Sangbong Park ,  Chung-Wei Hsu ,  Jang Fung Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36

摘要： A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

摘要翻译： 将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。 该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则，其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。

公开(公告)号：US07604909B2

公开(公告)日：2009-10-20

申请号：US11647599

申请日：2006-12-29

申请人： Chung-Wei Hsu ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Chung-Wei Hsu ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F5/00

CPC分类号： G03F1/36

摘要： A method of applying optical proximity correction features to a mask having a target pattern comprising a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; determining an interference map based on the process parameters and the target pattern; defining an area of influence which represents the area about a given feature in the target pattern in which scattering bars will be utilized in the mask; and disposing a scattering bar in the mask adjacent the given feature in a location indicated by said interference map only within the area of influence of the given feature.

摘要翻译： 一种将光学邻近校正特征应用于具有包括要成像的多个特征的目标图案的掩模的方法。 该方法包括以下步骤：定义要用于对掩模进行成像的一组过程参数; 基于过程参数和目标模式确定干涉图; 定义影响区域，其表示在掩模中将使用散射条的目标图案中的给定特征的区域; 以及仅在给定特征的影响区域内，在由所述干涉图指示的位置中的与给定特征相邻的掩模中布置散射条。