Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology
    1.
    发明授权
    Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology 失效
    使用接口映射技术生成用于放置散射条特征的OPC规则的方法和装置

    公开(公告)号:US07614034B2

    公开(公告)日:2009-11-03

    申请号:US11594248

    申请日:2006-11-08

    IPC分类号: G06F17/50 G03F1/00

    CPC分类号: G03F1/36

    摘要: A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

    摘要翻译: 将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。 该方法包括以下步骤:定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则,其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。

    Method and apparatus for performing dark field double dipole lithography (DDL)
    3.
    发明授权
    Method and apparatus for performing dark field double dipole lithography (DDL) 有权
    用于进行暗场双偶极子光刻(DDL)的方法和装置

    公开(公告)号:US07981576B2

    公开(公告)日:2011-07-19

    申请号:US12890494

    申请日:2010-09-24

    IPC分类号: G03F1/00 G03F1/14 G06F17/50

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

    Method and apparatus for performing dark field double dipole lithography (DDL)
    4.
    发明授权
    Method and apparatus for performing dark field double dipole lithography (DDL) 有权
    用于进行暗场双偶极子光刻(DDL)的方法和装置

    公开(公告)号:US08632930B2

    公开(公告)日:2014-01-21

    申请号:US13155259

    申请日:2011-06-07

    IPC分类号: G03F1/36

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

    Method and apparatus for performing dark field double dipole lithography (DDL)
    5.
    发明授权
    Method and apparatus for performing dark field double dipole lithography (DDL) 有权
    用于进行暗场双偶极子光刻(DDL)的方法和装置

    公开(公告)号:US07824826B2

    公开(公告)日:2010-11-02

    申请号:US11783261

    申请日:2007-04-06

    摘要: A method of generating complementary dark field masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.This method is enabled by a non-transitory computer readable medium configured to store program instructions for execution by a processor. The complementary dark field masks are used for patterning a layer of radiation-sensitive material in a device manufacturing method.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补暗场掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。 该方法由配置为存储用于由处理器执行的程序指令的非暂时计算机可读介质启用。 互补暗场掩模用于在器件制造方法中图案化一层辐射敏感材料。

    Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL)
    6.
    发明申请
    Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
    用于执行暗场双偶极平版印刷术(DDL)的方法和装置

    公开(公告)号:US20110014552A1

    公开(公告)日:2011-01-20

    申请号:US12890494

    申请日:2010-09-24

    IPC分类号: G03F1/00

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

    Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology
    7.
    发明申请
    Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology 失效
    使用接口映射技术生成用于放置散射条特征的OPC规则的方法和装置

    公开(公告)号:US20070122719A1

    公开(公告)日:2007-05-31

    申请号:US11594248

    申请日:2006-11-08

    IPC分类号: G06F17/50 G03F1/00

    CPC分类号: G03F1/36

    摘要: A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

    摘要翻译: 将光学邻近校正特征应用于具有要成像的多个特征的掩模的方法。 该方法包括以下步骤:定义要用于对掩模进行成像的一组过程参数; 定义对应于待成像的多个特征所展示的间距的一组音调范围; 确定所述音高范围中的至少一个的干涉图; 以及基于所述干涉图来生成用于定位与所述多个特征相邻的散射条的一组规则,其中所述规则集合管理具有落在用于生成所述干涉图的所述音调范围内的音调的特征的散射棒放置。

    Method and apparatus for performing dark field double dipole lithography (DDL)
    8.
    发明申请
    Method and apparatus for performing dark field double dipole lithography (DDL) 有权
    用于进行暗场双偶极子光刻(DDL)的方法和装置

    公开(公告)号:US20080020296A1

    公开(公告)日:2008-01-24

    申请号:US11783261

    申请日:2007-04-06

    IPC分类号: G03C5/00 G03F1/00

    摘要: A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

    摘要翻译: 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

    Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
    10.
    发明授权
    Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool 有权
    用于获得光刻模拟工具的短程火炬模型参数的方法,程序产品和设备

    公开(公告)号:US07818151B2

    公开(公告)日:2010-10-19

    申请号:US11415423

    申请日:2006-05-02

    IPC分类号: G06F17/50

    CPC分类号: G03F7/70941 G03F7/705

    摘要: A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.

    摘要翻译: 公开了一种获得表示短距离火炬的短距离火炬模型参数的过程,其降低了由光刻工具产生的图像的对比度。 从图像中测量短程光晕,以获得测量的短距离闪光数据。 基于短距离火炬模型参数进行模拟,以获得模拟的短距离火炬数据。 将模拟的短程火炬数据与测量的短距离火炬数据进行比较。 根据比较结果确定模拟中使用的短程火炬模型参数是否合适。 如果用于模拟的短距离火炬模型参数不合适,则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。