公开(公告)号：US20050196682A1

公开(公告)日：2005-09-08

申请号：US10981762

申请日：2004-11-05

申请人： Stephen Hsu ,  Jang Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

发明人： Stephen Hsu ,  Jang Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

IPC分类号： G03F1/08 ,  G03B27/72 ,  G03F1/14 ,  G03F7/20 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441

摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.

摘要翻译： 一种生成用于光刻工艺的掩模的方法。 该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。

公开(公告)号：US07523438B2

公开(公告)日：2009-04-21

申请号：US11108665

申请日：2005-04-19

申请人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

摘要翻译： 一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。 该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

公开(公告)号：US06951701B2

公开(公告)日：2005-10-04

申请号：US10222972

申请日：2002-08-19

申请人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03B27/72

CPC分类号： G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

摘要翻译： 一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。 该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

公开(公告)号：US06519760B2

公开(公告)日：2003-02-11

申请号：US09840305

申请日：2001-04-24

申请人： Xuelong Shi ,  Jang Fung Chen ,  Stephen Hsu

发明人： Xuelong Shi ,  Jang Fung Chen ,  Stephen Hsu

IPC分类号： G06F1750

CPC分类号： G03F7/705 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441

摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

公开(公告)号：US20070214448A1

公开(公告)日：2007-09-13

申请号：US11797407

申请日：2007-05-03

申请人： Stephen Hsu ,  Noel Corcoran ,  Jang Chen

发明人： Stephen Hsu ,  Noel Corcoran ,  Jang Chen

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of printing a pattern having vertically oriented features and horizontally oriented features on a substrate utilizing dipole illumination, which includes the steps of: identifying background areas contained in the pattern; generating a vertical component mask comprising non-resolvable horizontally oriented features in the background areas; generating a horizontal component mask comprising non-resolvable vertically oriented features in the background areas; illuminating said vertical component mask utilizing an X-pole illumination; and illuminating said horizontal component mask utilizing a Y-pole illumination.

公开(公告)号：US20050102648A1

公开(公告)日：2005-05-12

申请号：US10626858

申请日：2003-07-25

申请人： Stephen Hsu ,  Noel Corcoran ,  Jang Chen

发明人： Stephen Hsu ,  Noel Corcoran ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G06F17/50 ,  G03C5/00 ,  G21K5/10 ,  H01J37/08

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of printing a pattern having vertically oriented features and horizontally oriented features on a substrate utilizing dipole illumination, which includes the steps of: identifying background areas contained in the pattern; generating a vertical component mask comprising non-resolvable horizontally oriented features in the background areas; generating a horizontal component mask comprising non-resolvable vertically oriented features in the background areas; illuminating said vertical component mask utilizing an X-pole illumination; and illuminating said horizontal component mask utilizing a Y-pole illumination.

摘要翻译： 一种利用偶极照明在基板上印刷具有垂直定向特征和水平取向特征的图案的方法，其包括以下步骤：识别图案中包含的背景区域; 在背景区域中生成包括不可解决水平定向特征的垂直分量掩模; 在背景区域中生成包括不可解析的垂直取向特征的水平分量掩模; 利用X极照明照亮所述垂直分量掩模; 并利用Y极照明照亮所述水平分量掩模。

公开(公告)号：US20070162889A1

公开(公告)日：2007-07-12

申请号：US11714147

申请日：2007-03-06

申请人： Douglas Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

发明人： Douglas Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

IPC分类号： H01L21/302 ,  H01L21/461 ,  G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

公开(公告)号：US20050186491A1

公开(公告)日：2005-08-25

申请号：US11108665

申请日：2005-04-19

申请人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Broeke ,  Jang Chen

发明人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Broeke ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

公开(公告)号：US20050125765A1

公开(公告)日：2005-06-09

申请号：US11035737

申请日：2005-01-18

申请人： Doug Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

发明人： Doug Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G06F17/50 ,  G03F9/00 ,  G21K5/00

CPC分类号： G03F1/34 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

摘要翻译： 一种生成用于在基板上印刷目标图案的掩模的方法。 该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

公开(公告)号：US07549140B2

公开(公告)日：2009-06-16

申请号：US11035737

申请日：2005-01-18

申请人： Doug Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Hsu

发明人： Doug Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Hsu

IPC分类号： G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/34 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

摘要翻译： 一种生成用于在基板上印刷目标图案的掩模的方法。 该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。