公开(公告)号：US20240332428A1

公开(公告)日：2024-10-03

申请号：US18617858

申请日：2024-03-27

Applicant: Japan Display Inc.

Inventor： Masahiro WATABE ,  Masashi TSUBUKU ,  Hajime WATAKABE ,  Toshinari SASAKI ,  Marina MOCHIZUKI ,  Takaya TAMARU ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L27/1248 ,  H01L29/42384

Abstract: A semiconductor device comprises a first insulating layer; a metal oxide layer mainly composed of aluminum on the first insulating layer; an oxide semiconductor layer having a polycrystalline structure on the metal oxide layer; a gate insulating layer on the oxide semiconductor layer; a gate electrode on the gate insulating layer; and a second insulating layer on the gate electrode. The metal oxide layer and the oxide semiconductor layer are both patterned, and the oxide semiconductor layer has a first region in contact with the gate insulating layer and a second region continuous with the first region in a first direction and in contact with the gate insulating layer and the second insulating layer.

公开(公告)号：US20240290861A1

公开(公告)日：2024-08-29

申请号：US18435094

申请日：2024-02-07

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU ,  Marina MOCHIZUKI ,  Ryo ONODERA ,  Masahiro WATABE

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869

Abstract: A semiconductor device according to an embodiment includes: a first gate electrode; a first insulating layer on the first gate electrode; an oxide semiconductor layer on the first insulating layer; a second insulating layer on the oxide semiconductor layer; and a second gate electrode on the second insulating layer. The first insulating layer includes a first layer including silicon and nitrogen, a second layer including silicon and oxygen, and a third layer including aluminum and oxygen. A thickness of the first layer is 10 nm or more and 190 nm or less. A thickness of the second layer is 10 nm or more and 100 nm or less. A total thickness of the first layer and the second layer is 200 nm or less. A thickness of the third layer 1 nm or more and 10 nm or less.

公开(公告)号：US20200227569A1

公开(公告)日：2020-07-16

申请号：US16831958

申请日：2020-03-27

Applicant: Japan Display Inc.

Inventor： Takeshi SAKAI ,  Yuichiro HANYU ,  Masahiro WATABE

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L29/423

Abstract: The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US20170133594A1

公开(公告)日：2017-05-11

申请号：US15297567

申请日：2016-10-19

Applicant: Japan Display Inc.

Inventor： Toshifumi MIMURA ,  Masahiro WATABE ,  Toshihiro SATO

IPC: H01L51/00 ,  H01L51/52

CPC classification number: H01L51/0018 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5012 ,  H01L51/5237 ,  H01L51/5253 ,  H01L2227/323

Abstract: A manufacturing method of a display device includes: forming, in a resin layer including a display area where a plurality of lower electrodes is formed and a peripheral area surrounding the display area, a band-like groove which divides the resin layer in a form of surrounding the display area; forming an organic electroluminescence layer including a light emitting layer, on the resin layer and inside the band-like groove in such a way as to be placed on the plurality of lower electrodes; irradiating the organic electroluminescence layer with a pulse laser and thus eliminating the organic electroluminescence layer in such a way that a part of the organic electroluminescence layer is left in a shape of an island at least on a bottom surface of the band-like groove and that the bottom surface of the band-like groove is continuously exposed in the form of surrounding the display area.