公开(公告)号：US11973161B2

公开(公告)日：2024-04-30

申请号：US18091388

申请日：2022-12-30

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takanori Tsunashima ,  Marina Mochizuki

IPC: H01L31/12 ,  G06F1/16 ,  H01L31/101

CPC classification number: H01L31/125 ,  G06F1/1605 ,  H01L31/1016

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US11901465B2

公开(公告)日：2024-02-13

申请号：US17841731

申请日：2022-06-16

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku

IPC: H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/02164 ,  H01L31/022408 ,  H01L31/022483

Abstract: The optical sensor includes a substrate, a first transistor for functioning as a light-receiving element and a second transistor for writing/reading in a pixel region provided on the substrate. The first transistor is formed by a transistor using polycrystalline silicon, the second transistor is formed by a transistor using an oxide semiconductor. A light-shielding layer is provided on the back side of the oxide semiconductor of the second transistor. Thus, it is possible to irradiate light to the optical sensor fora long time, and in addition to increasing the amount of light received by the first transistor, it is possible to suppress variations in the characteristics of the second transistor.

公开(公告)号：US11575062B2

公开(公告)日：2023-02-07

申请号：US17527192

申请日：2021-11-16

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takanori Tsunashima ,  Marina Mochizuki

IPC: H01L27/14 ,  H01L31/12 ,  G06F1/16 ,  H01L31/101

Abstract: A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

公开(公告)号：US11980048B2

公开(公告)日：2024-05-07

申请号：US17699224

申请日：2022-03-21

Applicant: Japan Display Inc.

Inventor： Hayata Aoki ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC: H10K50/858 ,  H10K50/81 ,  H10K50/828

CPC classification number: H10K50/828 ,  H10K50/81 ,  H10K50/858

Abstract: According to one embodiment, a display device comprises a first area including a pixel and a second area different from the first area, wherein the pixel comprises a pixel electrode, an organic material layer including a light-emitting layer, a common electrode, a first insulating layer, a second insulating layer having a refractive index lower than that of the first insulating layer, and a third insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area comprises the first insulating layer provided therein, the second area does not comprise the second insulating layer.

公开(公告)号：US11581358B2

公开(公告)日：2023-02-14

申请号：US16999214

申请日：2020-08-21

Applicant: Japan Display Inc.

Inventor： Takanori Tsunashima ,  Masashi Tsubuku ,  Makoto Uchida

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/113 ,  H04N5/369

Abstract: According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

公开(公告)号：US11927859B2

公开(公告)日：2024-03-12

申请号：US17447740

申请日：2021-09-15

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Takeshi Sakai ,  Tatsuya Toda

IPC: G02F1/1368 ,  H10K59/124 ,  H10K71/00 ,  H10K59/12

CPC classification number: G02F1/1368 ,  H10K59/124 ,  H10K71/00 ,  H10K59/1201

Abstract: A display device comprising a transistor and a display element over the transistor, wherein the transistor includes a gate electrode on an insulating surface, a gate insulating layer on the gate electrode, and source/drain electrodes on the oxide semiconductor layer and the gate insulating layer, each including a first conductive layer containing nitrogen and a second conductive layer on the first conductive layer, and an insulating layer contains oxygen on the oxide semiconductor layer and the source/drain electrodes.

公开(公告)号：US11342463B2

公开(公告)日：2022-05-24

申请号：US17036298

申请日：2020-09-29

Applicant: Japan Display Inc.

Inventor： Tatsuya Toda ,  Masashi Tsubuku

IPC: H01L29/786 ,  H01L21/473

Abstract: A semiconductor device comprising: an oxide semiconductor layer including indium; a gate electrode facing to the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; a first conductive layer arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer; an oxide portion formed on the oxide semiconductor layer and at an edge of the first conductive layer, the oxide portion being a oxide of the first conductive layer.

公开(公告)号：US10930720B2

公开(公告)日：2021-02-23

申请号：US16368841

申请日：2019-03-28

Applicant: Japan Display Inc.

Inventor： Miyuki Ishikawa ,  Masashi Tsubuku

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L21/02 ,  H01L29/66 ,  H01L29/49 ,  G02F1/1362 ,  G02F1/1368

Abstract: One embodiment of the invention is characterized as follows. A display device comprising: a display area including a plurality of pixels, each of the pixels has a first TFT and a second TFT, the first TFT and the second TFT comprise an oxide semiconductor, the first TFT and the second TFT are covered by an interlayer insulating film, a first through hole is formed in the in the interlayer insulating film to connect a drain of the first TFT, wherein a distance d1 between a center of the first through hole and an edge of a channel of the first TFT is shorter than a distance d2 between a center of the first through hole and an edge of a channel of the second TFT, a channel length of the first TFT is shorter than a channel length of the second TFT.