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公开(公告)号：US20240341114A1
公开(公告)日：2024-10-10
申请号：US18750319
申请日：2024-06-21
Applicant: Japan Display Inc.
Inventor： Hayata AOKI , Masumi NISHIMURA , Jun NITTA
Abstract: According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region.
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公开(公告)号：US20240250214A1
公开(公告)日：2024-07-25
申请号：US18589784
申请日：2024-02-28
Applicant: Japan Display Inc.
Inventor： Hiroumi KINJO , Masumi NISHIMURA , Hayata AOKI
Abstract: A gallium nitride-based semiconductor device includes an amorphous substrate, a conductive alignment layer on the amorphous substrate, a gallium nitride-based semiconductor layer on the conductive alignment layer, and an auxiliary electrode layer in contact with the conductive alignment layer. The auxiliary electrode layer is arranged around a periphery portion of the conductive alignment layer.
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公开(公告)号：US20220231250A1
公开(公告)日：2022-07-21
申请号：US17574812
申请日：2022-01-13
Applicant: Japan Display Inc.
Inventor： Hayata AOKI , Masumi NISHIMURA , Jun NITTA
Abstract: According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region.
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公开(公告)号：US20220128847A1
公开(公告)日：2022-04-28
申请号：US17570553
申请日：2022-01-07
Applicant: Japan Display Inc.
Inventor： Masumi NISHIMURA , Shinichiro OKA
IPC: G02F1/1339 , H01L51/52 , G02F1/1333
Abstract: A display device includes a flexible substrate including a first region including a display region, a second region including a curved region, and a third region including a terminal region; an electro-optical element located in the display region; and a resin layer continuously extending from the first region to the third region.
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公开(公告)号：US20220071032A1
公开(公告)日：2022-03-03
申请号：US17462533
申请日：2021-08-31
Applicant: Japan Display Inc.
Inventor： Masumi NISHIMURA
Abstract: A display device according to an embodiment includes a bendable housing, a flexible display module, a flexible external frame, and an internal frame. The display module includes a first surface facing the housing, a second surface opposite to the first surface, and a side surface connecting the first and second surfaces. The external frame has a base end portion connected to the housing and an edge portion integrally formed with the base end portion and facing the second surface, and covers the display module. The internal frame is arranged between the base end portion and the side surface, and has a Young's modulus larger than that of the external frame.
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Patent Agency Ranking
公开(公告)号：US20190006444A1
公开(公告)日：2019-01-03
申请号：US16007371
申请日：2018-06-13
Applicant: Japan Display Inc.
Inventor： Masumi NISHIMURA
CPC classification number: H01L27/3246 , G06F1/1652 , H01L23/4985 , H01L27/3283 , H01L27/3295 , H01L31/03926 , H01L41/0475 , H01L51/0097 , H01L51/5253 , H01L51/529 , H04M1/0268
Abstract: A display device includes a display panel including a display region, a terminal region provided with a terminal, and a bending region located between the display region and the terminal region and capable of bending, the terminal region being located on a rear surface side opposite to a display surface side with respect to the display region based on the bending region bent and a protective coating provided on the display surface side of the bending region. When a direction in which the display region, the bending region, and the terminal region are arranged is defined as a first direction and a direction crossing the first direction is defined as a second direction, the bending region includes a bank portion located in the second direction with respect to the protective coating, projecting to the display surface side, and extending in the first direction.
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公开(公告)号：US20180108723A1
公开(公告)日：2018-04-19
申请号：US15784270
申请日：2017-10-16
Applicant: Japan Display Inc.
Inventor： Masumi NISHIMURA
CPC classification number: H01L27/3276 , H01L27/1218 , H01L27/1244 , H01L51/0097 , H01L51/5253 , H01L2227/323
Abstract: A display device according to an embodiment of the present invention includes: a base material including a display region, and a peripheral region which is located outside the display region, at least a part of the peripheral region being a bending region; an insulating layer that is disposed on the base material, extends from the display region to a part of the peripheral region, and is located apart from an edge of the base material; at least one level difference moderating layer that is disposed under the insulating layer and extends from an edge of the insulating layer toward a side of the bending region; and at least one wiring disposed on the insulating layer and the at least one level difference moderating layer.
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公开(公告)号：US20150236291A1
公开(公告)日：2015-08-20
申请号：US14627439
申请日：2015-02-20
Applicant: Japan Display Inc.
Inventor： Masato ITO , Masakazu GUNJI , Masumi NISHIMURA
CPC classification number: H01L51/5088 , H01L27/3244 , H01L27/3262 , H01L51/0008 , H01L51/002 , H01L51/0045 , H01L51/504 , H01L51/5044 , H01L51/5278
Abstract: An organic EL display device includes an organic EL element having a first light-emitting portion, a second light-emitting portion, an n-type charge-generation layer, and a p-type charge-generation layer. The first light-emitting portion has a first light-emitting layer and a hole-injection layer. The first light-emitting layer is formed between an anode and a cathode. The hole-injection layer is made of amorphous carbon and in contact with the anode. The second light-emitting portion has a second light-emitting layer, which is formed between the first light-emitting portion and the cathode. The n-type charge-generation layer is formed between the first and second light-emitting portions. The n-type charge-generation layer is in contact with the first light-emitting portion. The p-type charge-generation layer is made of amorphous carbon and formed between the n-type charge-generation layer and the second light-emitting portion. The p-type charge-generation layer is in contact with the second light-emitting portion.
Abstract translation: 有机EL显示装置包括具有第一发光部分，第二发光部分，n型电荷产生层和p型电荷产生层的有机EL元件。 第一发光部具有第一发光层和空穴注入层。 第一发光层形成在阳极和阴极之间。 空穴注入层由无定形碳制成并与阳极接触。 第二发光部具有形成在第一发光部和阴极之间的第二发光层。 n型电荷产生层形成在第一和第二发光部之间。 n型电荷产生层与第一发光部分接触。 p型电荷产生层由n型电荷产生层和第二发光部分之间形成无定形碳。 p型电荷产生层与第二发光部分接触。
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公开(公告)号：US20250159919A1
公开(公告)日：2025-05-15
申请号：US19021571
申请日：2025-01-15
Applicant: Japan Display Inc.
Inventor： Masumi NISHIMURA
Abstract: A transistor includes an amorphous substrate, a first buffer layer over the amorphous substrate, a first nitride semiconductor layer in an island-shaped pattern over the first buffer layer, a second nitride semiconductor layer over the first nitride semiconductor layer so as to cover the first nitride semiconductor layer, and a gate electrode layer over the second nitride semiconductor layer so as to overlap the first nitride semiconductor layer.
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公开(公告)号：US20250072068A1
公开(公告)日：2025-02-27
申请号：US18948697
申请日：2024-11-15
Applicant: Japan Display Inc.
Inventor： Masumi NISHIMURA
IPC: H01L29/06 , H01L21/02 , H01L29/20 , H01L31/0304 , H01L33/32
Abstract: Disclosed is a stacked structure which may include a buffer layer, a first semiconductor layer, and a second semiconductor layer. The buffer layer and the first semiconductor layer are stacked with each other in a vertical direction. The second semiconductor layer is in contact with a side surface of the first semiconductor layer and may surround at least a part of the first semiconductor layer in a plane perpendicular to the vertical direction. Each of the first semiconductor layer and the second semiconductor layer may include a Group III-V material or a Group III nitride material. Crystallinity of the first semiconductor layer may be higher than crystallinity of the second semiconductor layer. The buffer layer may be exposed from the second semiconductor layer in the vertical direction.
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