公开(公告)号：US20140307194A1

公开(公告)日：2014-10-16

申请号：US14245102

申请日：2014-04-04

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Norihiro UEMURA ,  Takeshi NODA ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78696 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/133357 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: In a bottom gate thin film transistor using a first oxide semiconductor layer as a channel layer, the first oxide semiconductor layer and second semiconductor layers include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to or larger than that of the first oxide semiconductor layer, and a film thickness thereof is thicker than that of the first oxide semiconductor layer.

Abstract translation: 在使用第一氧化物半导体层作为沟道层的底栅极薄膜晶体管中，第一氧化物半导体层和第二半导体层包括In和O.第二氧化物半导体层的（O / In）比等于或大于 比第一氧化物半导体层的厚度厚，其厚度比第一氧化物半导体层厚。