公开(公告)号：US20060120428A1

公开(公告)日：2006-06-08

申请号：US11272611

申请日：2005-11-14

申请人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

发明人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

IPC分类号： H01S3/08

CPC分类号： H01S5/2231 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/0654 ,  H01S5/0655 ,  H01S5/12 ,  H01S5/1231 ,  H01S5/2205 ,  H01S5/2215 ,  H01S5/2232 ,  H01S5/3412 ,  H01S5/34313

摘要： The distributed feedback semiconductor laser includes: a lower clad layer formed on a substrate; a ridge including an active layer and an upper clad layer sequentially formed on the lower clad layer; and a grating formed at a sidewall or both sidewalls of the ridge including the active layer in a direction perpendicular to the active layer and a resonance axis so as to enable a single longitudinal mode oscillation. The grating has parallel grooves that are equally spaced at a period equal to an integer multiple of half of an oscillation wavelength λ (nλ/2, n=1, 2, 3 . . . ).

摘要翻译： 分布式反馈半导体激光器包括：形成在基板上的下包层; 包括依次形成在下包层上的有源层和上包层的脊; 以及形成在脊的侧壁或两个侧壁处的光栅，包括有源层在垂直于有源层的方向和谐振轴上，以便能够进行单个纵向模式振荡。 光栅具有在等于振荡波长λ（nλ/ 2，n = 1,2,3，...）的一半的整数倍的周期等间隔的平行凹槽。

公开(公告)号：US07508857B2

公开(公告)日：2009-03-24

申请号：US11265712

申请日：2005-11-02

申请人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

发明人： Sung Ui Hong ,  Jin Hong Lee ,  Jin Soo Kim ,  Ho Sang Kwack ,  Dae Kon Oh

IPC分类号： H01S5/00

CPC分类号： H01S5/227 ,  B82Y10/00 ,  B82Y20/00 ,  H01S5/2215 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34366

摘要： Provided are a semiconductor laser diode and a method of manufacturing the same. The semiconductor laser diode includes a lower cladding layer disposed on a substrate; a ridge including an optical waveguide layer, an active layer, an upper cladding layer, and an ohmic contact layer, which are sequentially stacked on the lower cladding layer, and having a predetermined width, which is obtained by performing a channel etching process on both sides of the ridge; an oxide layer disposed on surfaces of the upper and lower cladding layer to control the width of the ridge; a dielectric layer disposed on left and right channels of the ridge; an upper electrode layer disposed on the entire surface of the resultant structure to enclose the ridge and the dielectric layer; and a lower electrode layer disposed on a bottom surface of the substrate. The method is simpler than a conventional process of manufacturing a semiconductor laser diode. Also, by controlling a wet oxidation time, the width of a ridge can be freely controlled and an ohmic contact layer can be automatically formed.

摘要翻译： 提供半导体激光二极管及其制造方法。 半导体激光二极管包括设置在基板上的下包层; 包括光波导层，有源层，上覆层和欧姆接触层的脊，其顺序地层叠在下包层上，并且具有预定的宽度，其通过对两者进行沟道蚀刻处理而获得 山脊边; 设置在所述上​​下包层的表面上以控制所述脊的宽度的氧化物层; 布置在所述脊的左通道和右通道上的电介质层; 设置在所得结构的整个表面上以包围脊和电介质层的上电极层; 以及设置在所述基板的底面上的下电极层。 该方法比制造半导体激光二极管的常规方法简单。 此外，通过控制湿式氧化时间，可以自由地控制脊的宽度，并且可以自动形成欧姆接触层。

公开(公告)号：US07551662B2

公开(公告)日：2009-06-23

申请号：US12096351

申请日：2006-11-24

申请人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Byung Seok Choi ,  Hyun Soo Kim ,  Sung Bock Kim

发明人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Byung Seok Choi ,  Hyun Soo Kim ,  Sung Bock Kim

IPC分类号： H01H3/08 ,  H01S5/00

CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/185

摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.

摘要翻译： 提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。 因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。 并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。

公开(公告)号：US20080279243A1

公开(公告)日：2008-11-13

申请号：US12096351

申请日：2006-11-24

申请人： Dae Kon OH ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Byung Seok Choi ,  Hyun Soo Kim ,  Sung Bock Kim

发明人： Dae Kon OH ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Byung Seok Choi ,  Hyun Soo Kim ,  Sung Bock Kim

IPC分类号： H01S5/00

CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/185

摘要： A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure.

摘要翻译： 提供了分布式反馈（DFB）量子点半导体激光器结构。 DFB量子点半导体激光器结构包括：形成在下电极上的第一覆层; 形成在第一包层上的光波导（WG）; 光栅结构层，形成在光学WG上并且包括多个周期性布置的光栅; 形成在所述光栅结构层上的第一分离限制性杂（SCH）层; 形成在第一SCH层上并包括至少一个量子点的有源层; 形成在所述有源层上的第二SCH层; 形成在第二SCH层上的第二覆层; 形成在所述第二覆盖层上的欧姆层; 和形成在欧姆层上的上电极。 因此，光学WG设置在有源层与光栅结构层的相反侧，从而提高单一光模式效率。 并且，使用非对称多电极结构来施加电流，从而最大化单模半导体激光器结构的纯度和效率。

公开(公告)号：US06277722B1

公开(公告)日：2001-08-21

申请号：US09594896

申请日：2000-06-15

申请人： Sang Moo Lee ,  Jin Hong Lee

发明人： Sang Moo Lee ,  Jin Hong Lee

IPC分类号： H01L21336

CPC分类号： H01L21/28061 ,  H01L21/28247

摘要： A method for forming a poly metal gate, comprising the steps of: providing a substrate where a gate oxide is formed; forming a polysilicon film, a barrier metal, a refractory metal film and a hard mask over the gate oxide; patterning the hard mask, the refractory metal film, the barrier metal and the polysilicon film to form a gate metal gate; forming a capping layer for oxidation prevention over the gate oxide to cover the poly metal gate; etching the capping layer for oxidation prevention to remain in sidewalls of the poly metal gate; carrying out a heat treatment using a H2 gas to cover a damage of the capping layer for oxidation prevention in the capping layer etching step; and carrying out a reoxidation process to recover a damage caused in the etching step for the formation of the poly metal gate and improve reliability of the gate oxide.

摘要翻译： 一种形成多金属栅极的方法，包括以下步骤：提供形成栅极氧化物的衬底; 在栅极氧化物上形成多晶硅膜，阻挡金属，难熔金属膜和硬掩模; 图案化硬掩模，难熔金属膜，阻挡金属和多晶硅膜以形成栅极金属栅极; 在所述栅极氧化物上形成用于氧化防止的覆盖层以覆盖所述多晶金属栅极; 蚀刻封盖层以防止氧化以保留在多金属栅极的侧壁中; 在覆盖层蚀刻工序中，使用H 2气体进行热处理，以覆盖覆盖层的氧化防止损伤; 并进行再氧化处理，以回收在用于形成多金属栅极的蚀刻步骤中引起的损伤并提高栅极氧化物的可靠性。

公开(公告)号：US06194294B1

公开(公告)日：2001-02-27

申请号：US09466740

申请日：1999-12-17

申请人： Jin Hong Lee

发明人： Jin Hong Lee

IPC分类号： H01L213205

CPC分类号： H01L21/31116 ,  H01L21/28044 ,  H01L21/28176 ,  H01L21/28194 ,  H01L29/42368

摘要： A method of forming a gate electrode in a semiconductor device which can easily perform gate re-oxidation process without transforming the morphology of the gate electrode, is disclosed. According to the present invention, a gate oxide layer, a doped polysilicon layer, a barrier metal layer and a refractory metal layer are formed on a semiconductor substrate, in sequence. A hard mask is then formed on the refractory metal. Next, the refractory metal layer, the barrier metal layer and the polysilicon layer are etched using the hard mask as an etch mask to form a gate electrode. A spacer for oxidation barrier is then formed on the side wall of the gate electrode and the hard mask. Thereafter, gate re-oxidation process is performed using the spacer as an oxidation mask to form a re-oxidation layer on the substrate of both sides of the spacer. The spacer is formed of a nitride layer such as a SiON layer or a Si4N3 layer. Furthermore, the spacer is formed to the thickness of 50 to 300 Å.

摘要翻译： 公开了一种在能够容易地进行栅极再氧化处理而不转变栅电极的形态的半导体器件中形成栅电极的方法。 根据本发明，依次在半导体衬底上形成栅氧化层，掺杂多晶硅层，阻挡金属层和难熔金属层。 然后在难熔金属上形成硬掩模。 接下来，使用硬掩模作为蚀刻掩模蚀刻难熔金属层，阻挡金属层和多晶硅层，以形成栅电极。 然后在栅电极和硬掩模的侧壁上形成用于氧化屏障的间隔物。 此后，使用间隔物作为氧化掩模进行栅极再氧化处理，以在衬垫的两侧的衬底上形成再氧化层。 间隔物由诸如SiON层或Si4N3层的氮化物层形成。 此外，间隔件形成为50至300的厚度。