公开(公告)号：US20070134857A1

公开(公告)日：2007-06-14

申请号：US11637997

申请日：2006-12-12

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L21/84

CPC分类号： H01L51/0002 ,  H01L51/0541 ,  H01L51/0558 ,  H01L2251/5338

摘要： A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain electrodes; first surface-treating the insulating layer so that the insulating layer has a hydrophobic surface; forming an opening that exposes facing portions of the source and drain electrodes in the first surface-treated insulating layer; forming an organic semiconductor layer and a gate insulating layer in the opening; second surface-treating the first surface-treated insulating layer so that the insulating layer has a hydrophilic surface; and forming a gate electrode overlapping at least a portion of the source and drain electrodes, an organic thin film transistor, and a flat panel display device including the organic thin film transistor. According to the method of preparing an organic thin film transistor as described above, at least one of an organic semiconductor layer and a gate insulating layer can be easily formed. When the organic thin film transistor is formed in an array form with respect to a capacitor, the organic thin film transistor has a substantially low parasitic capacitance and the capacitor has a high capacitance.

摘要翻译： 公开了一种形成有机薄膜晶体管的方法。 该方法包括在衬底上形成源电极和漏电极; 形成覆盖源极和漏极的绝缘层; 首先对所述绝缘层进行表面处理，使得所述绝缘层具有疏水性表面; 形成在所述第一表面处理绝缘层中露出所述源极和漏极的相对部分的开口; 在开口中形成有机半导体层和栅极绝缘层; 对所述第一表面处理绝缘层进行表面处理，以使所述绝缘层具有亲水性表面; 以及形成与所述源极和漏极的至少一部分重叠的栅电极，有机薄膜晶体管和包括所述有机薄膜晶体管的平板显示装置。 根据如上所述制备有机薄膜晶体管的方法，可以容易地形成有机半导体层和栅极绝缘层中的至少一个。 当有机薄膜晶体管相对于电容器形成阵列形式时，有机薄膜晶体管具有大大低的寄生电容，并且电容器具有高电容。

公开(公告)号：US20070132023A1

公开(公告)日：2007-06-14

申请号：US11528022

申请日：2006-09-26

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L27/12

CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0017 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.

摘要翻译： 提供一种有机薄膜晶体管，其可以在图案化有机半导体层时防止对源极和漏极的损坏，以及制造具有有机薄膜晶体管的有机发光显示装置的方法。 有机薄膜晶体管包括源电极和漏电极; 与源极和漏极接触的有机半导体层，除了源极和漏极之间的沟道区以外具有灰化表面; 与源电极，漏电极和有机半导体层绝缘的栅电极; 以及使栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘膜。

公开(公告)号：US20070087489A1

公开(公告)日：2007-04-19

申请号：US11582467

申请日：2006-10-18

申请人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L21/84 ,  H01L21/00 ,  H01L51/40 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/3274 ,  H01L51/0545

摘要： The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.

摘要翻译： 有机TFT包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 将栅电极与源电极和漏电极以及有机半导体层绝缘的绝缘层; 以及包括在绝缘层和有机半导体层之间的自组装单层（SAM）。 形成SAM的化合物具有至少一个选自未取代或取代的C 6 -C 30芳基的末端基团和未取代或取代的C _{2 30 30个杂芳基。 在形成有机半导体层和源极和漏极之前，通过形成上述层并在绝缘层上形成SAM来形成有机TFT。 因此，有机半导体层和绝缘层之间的粘合力增加，并且可以防止由热引起的有机半导体材料的相分离，从而获得可靠性提高的平板显示装置。}

公开(公告)号：US07875877B2

公开(公告)日：2011-01-25

申请号：US11581424

申请日：2006-10-17

申请人： Jin-Seong Park ,  Min-Chul Suh ,  Taek Ahn

发明人： Jin-Seong Park ,  Min-Chul Suh ,  Taek Ahn

IPC分类号： H01L51/30

CPC分类号： H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.

摘要翻译： 可以控制阈值电压并减少漏电流的有机薄膜晶体管包括：栅电极; 与栅电极绝缘的有机半导体层; 源极电极和漏电极，与栅电极绝缘并电连接到有机半导体层; 插入在所述栅极电极和所述有机半导体层之间的栅极绝缘层; 以及介于栅极绝缘层和有机半导体层之间的空穴控制层。 空穴控制层包括具有空穴给体基团的化合物或具有空穴受体基团的化合物。

公开(公告)号：US07696520B2

公开(公告)日：2010-04-13

申请号：US11528022

申请日：2006-09-26

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/283 ,  H01L27/3274 ,  H01L51/0017 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： Provided is an organic thin film transistor that can prevents damage to source and drain electrodes when patterning an organic semiconductor layer, and a method of manufacturing an organic light emitting display device having the organic thin film transistor. The organic thin film transistor includes a source electrode and a drain electrode; an organic semiconductor layer that contacts the source and drain electrodes, and has an ashed surface except a channel area between the source and drain electrodes; a gate electrode insulated from the source electrode, the drain electrode, and the organic semiconductor layer; and a gate insulating film that insulates the gate electrode from the source electrode, the drain electrode, and the organic semiconductor layer.

摘要翻译： 提供一种有机薄膜晶体管，其可以在图案化有机半导体层时防止对源极和漏极的损坏，以及制造具有有机薄膜晶体管的有机发光显示装置的方法。 有机薄膜晶体管包括源电极和漏电极; 与源极和漏极接触的有机半导体层，除了源极和漏极之间的沟道区以外具有灰化表面; 与源电极，漏电极和有机半导体层绝缘的栅电极; 以及使栅电极与源电极，漏电极和有机半导体层绝缘的栅极绝缘膜。

公开(公告)号：US07485894B2

公开(公告)日：2009-02-03

申请号：US11582534

申请日：2006-10-18

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

公开(公告)号：US20070090351A1

公开(公告)日：2007-04-26

申请号：US11581424

申请日：2006-10-17

申请人： Jin-Seong Park ,  Min-Chul Suh ,  Taek Ahn

发明人： Jin-Seong Park ,  Min-Chul Suh ,  Taek Ahn

IPC分类号： H01L29/08 ,  H01L29/76 ,  H01L35/24 ,  H01L29/10 ,  H01L51/00 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L51/0545 ,  H01L51/0558

摘要： An organic thin film transistor that can control the threshold voltage and reduce leakage current includes: a gate electrode; an organic semiconductor layer insulated from the gate electrode; a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the organic semiconductor layer; a gate insulating layer interposed between the gate electrode and the organic semiconductor layer; and a hole control layer that is interposed between the gate insulating layer and the organic semiconductor layer. The hole control layer includes a compound having a hole-donor group or a compound having a hole-acceptor group.

摘要翻译： 可以控制阈值电压并减少漏电流的有机薄膜晶体管包括：栅电极; 与栅电极绝缘的有机半导体层; 源极电极和漏电极，与栅电极绝缘并电连接到有机半导体层; 插入在所述栅极电极和所述有机半导体层之间的栅极绝缘层; 以及介于栅极绝缘层和有机半导体层之间的空穴控制层。 空穴控制层包括具有空穴给体基团的化合物或具有空穴受体基团的化合物。

公开(公告)号：US08207529B2

公开(公告)日：2012-06-26

申请号：US12856854

申请日：2010-08-16

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L51/00

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。 该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

公开(公告)号：US20100308317A1

公开(公告)日：2010-12-09

申请号：US12856854

申请日：2010-08-16

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L51/10

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。 该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

公开(公告)号：US20100151622A1

公开(公告)日：2010-06-17

申请号：US12706836

申请日：2010-02-17

申请人： Min-Chul SUH ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul SUH ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/3274 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/105

摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

摘要翻译： 一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。 有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。