公开(公告)号：US07800102B2

公开(公告)日：2010-09-21

申请号：US11582467

申请日：2006-10-18

申请人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L27/3274 ,  H01L51/0545

摘要： The organic TFT includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer insulating the gate electrode from the source and drain electrodes and the organic semiconductor layer; and a self-assembly monolayer (SAM) included between the insulating layer and the organic semiconductor layer. A compound forming the SAM has at least one terminal group selected from the group consisting of an unsubstituted or substituted C6-C30 aryl group and an unsubstituted or substituted C2-C30 heteroaryl group. The organic TFT is formed by forming the above-described layers and forming the SAM on the insulating layer before the organic semiconductor layer and source and drain electrodes are formed. Thus, the adhesive force between the organic semiconductor layer and the insulating layer increases and the phase separation of the organic semiconductor material caused by heat can be prevented, thereby obtaining a flat panel display device with improved reliability.

摘要翻译： 有机TFT包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 将栅电极与源电极和漏电极以及有机半导体层绝缘的绝缘层; 以及包括在绝缘层和有机半导体层之间的自组装单层（SAM）。 形成SAM的化合物具有至少一个选自未取代或取代的C 6 -C 30芳基和未取代或取代的C 2 -C 30杂芳基的末端基团。 在形成有机半导体层和源极和漏极之前，通过形成上述层并在绝缘层上形成SAM来形成有机TFT。 因此，有机半导体层和绝缘层之间的粘合力增加，并且可以防止由热引起的有机半导体材料的相分离，从而获得可靠性提高的平板显示装置。

公开(公告)号：US20070090352A1

公开(公告)日：2007-04-26

申请号：US11582534

申请日：2006-10-18

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

公开(公告)号：US07910401B2

公开(公告)日：2011-03-22

申请号：US12706836

申请日：2010-02-17

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/3274 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/105

摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

摘要翻译： 一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。 有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

公开(公告)号：US07799597B2

公开(公告)日：2010-09-21

申请号：US11582973

申请日：2006-10-19

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L51/40

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。 该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

公开(公告)号：US20070158648A1

公开(公告)日：2007-07-12

申请号：US11527894

申请日：2006-09-26

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L29/08

CPC分类号： H01L51/0545 ,  H01L51/105

摘要： An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.

摘要翻译： 公开了一种在源极和漏极之间具有改善的接触的有机TFT和有机半导体层，其制造方法以及具有有机TFT的有机发光显示装置。 有机TFT包括基板，设置在基板上的栅极电极，覆盖栅极的栅极绝缘膜，设置在栅极绝缘膜上的源电极和漏电极，设置在栅极绝缘膜上的剥离层 以接触源极和漏极的至少一部分端面，以及接触源极和漏极的有机半导体层。

公开(公告)号：US20070090362A1

公开(公告)日：2007-04-26

申请号：US11582973

申请日：2006-10-19

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park

IPC分类号： H01L29/76 ,  H01L21/84

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0004 ,  H01L51/0541 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; a hydrophobic layer which covers the source and drain electrodes or insulating layer and has an opening that defines a region corresponding to the organic semiconductor layer; and a hydrophilic layer formed in the opening of the hydrophobic layer, wherein the organic semiconductor layer is formed on the hydrophilic layer. The thin film transistor includes the organic semiconductor layer having a highly precise pattern that is formed without an additional patterning process.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并电连接到源极和漏极的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 覆盖源极和漏极或绝缘层并具有限定对应于有机半导体层的区域的开口的疏水层; 以及形成在疏水层的开口中的亲水层，其中在亲水层上形成有机半导体层。 该薄膜晶体管包括具有高精度图案的有机半导体层，该图案形成为没有附加的图案化工艺。

公开(公告)号：US08318533B2

公开(公告)日：2012-11-27

申请号：US12662192

申请日：2010-04-05

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

IPC分类号： H01L51/40 ,  H01L21/00 ,  H01L21/44

CPC分类号： B82Y30/00 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

摘要翻译： 具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。 还提供了使用有机薄膜晶体管的平板显示装置。 有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层 和源电极或有机半导体层和漏电极。

公开(公告)号：US20100197085A1

公开(公告)日：2010-08-05

申请号：US12662192

申请日：2010-04-05

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

IPC分类号： H01L51/40

CPC分类号： B82Y30/00 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

摘要翻译： 具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。 还提供了使用有机薄膜晶体管的平板显示装置。 有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层 和源电极或有机半导体层和漏电极。

公开(公告)号：US07714324B2

公开(公告)日：2010-05-11

申请号：US11527894

申请日：2006-09-26

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L51/10

CPC分类号： H01L51/0545 ,  H01L51/105

摘要： An organic TFT that has an improved contact between source and drain electrodes and an organic semiconductor layer, a method of manufacturing the same, and an organic light emitting display device having the organic TFT are disclosed. The organic TFT includes a substrate, a gate electrode disposed on the substrate, a gate insulating film covering the gate electrode, a source electrode and a drain electrode disposed on the gate insulating film, a peel-off preventive layer disposed on the gate insulating film to contact at least a portion of end surfaces of the source and drain electrodes, and an organic semiconductor layer that contacts the source and drain electrodes.

摘要翻译： 公开了一种在源极和漏极之间具有改善的接触的有机TFT和有机半导体层，其制造方法以及具有有机TFT的有机发光显示装置。 有机TFT包括基板，设置在基板上的栅极电极，覆盖栅极的栅极绝缘膜，设置在栅极绝缘膜上的源电极和漏电极，设置在栅极绝缘膜上的剥离层 以接触源极和漏极的至少一部分端面，以及接触源极和漏极的有机半导体层。

公开(公告)号：US07692185B2

公开(公告)日：2010-04-06

申请号：US11546342

申请日：2006-10-12

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L51/00

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/3274 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/105

摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

摘要翻译： 一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。 有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。