公开(公告)号：US07793604B2

公开(公告)日：2010-09-14

申请号：US10157875

申请日：2002-05-31

申请人： John H. Keller

发明人： John H. Keller

IPC分类号： B63B35/79

CPC分类号： B63B1/20 ,  B63B35/7906 ,  B63B35/792 ,  B63B35/7926 ,  B63B35/7953 ,  B63B2001/201 ,  B63B2001/202 ,  B63B2001/206

摘要： High performance of a sailboard is achieved over a wider range of wind and water conditions by providing a hull having two or more planing surfaces which may differ in shape and/or aspect ratio. Drag due to suction at steps between planing surfaces is reduced by venting to the air. Cusp shaping of the respective planing surfaces can reduce and stabilize the angle of attack at the displacement/planing transition without causing fore-and-aft pitching effects known as porpoising. By confining water under the planing surfaces to reduce lateral outflow thereof through increased downward curvature of the bottom of the board, winglets, asymmetrical fins, fences and the like, the effective width and aspect ratio of the wetted area may be altered beyond that of the actual geometry of the planing surfaces to further increase lift and reduce drag while providing additional sources of lift at displacement, transitional and planing speeds. Steps and/or cambered shapes of the planing surface may be used to dramatically further reduce wetted area and further increase effective aspect ratio.

摘要翻译： 通过提供具有在形状和/或纵横比上可能不同的两个或更多个刨面的船体，可以在较宽范围的风和水条件下实现帆板的高性能。 通过排放到空气中减少由于在刨削表面之间的台阶处的吸力而拖动。 相应的刨削面的尖头成形可以减小并稳定位移/刨削过渡处的迎角，而不会导致称为海豚的前后俯仰效应。 通过将水限制在刨削表面下，通过增加板的底部，小翼片，不对称翼片，围栏等的向下弯曲来减少侧向流出，湿润区域的有效宽度和纵横比可以被改变超过 刨削表面的实际几何形状，以进一步增加升力并减少阻力，同时在位移，过渡和刨削速度下提供额外的升力源。 可以使用刨削表面的台阶和/或弧形形状来显着地进一步减少润湿面积并进一步增加有效纵横比。

公开(公告)号：US5880034A

公开(公告)日：1999-03-09

申请号：US841218

申请日：1997-04-29

申请人： John H. Keller

发明人： John H. Keller

IPC分类号： H01J37/32 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01L21/3065 ,  H01J2237/3341

摘要： Uniformity of plasma density and potential are increased by reducing plasma confinement through use of a non-uniform, graded magnetic field by asymmetric energization of electromagnets with a waveform including harmonics of a fundamental frequency. The magnetic field strength or intensity decreases in the direction of ExB drift of energetic electrons within the plasma which tends to cause additional ionization in the plasma and a gradient of plasma density and potential. Thus, increase in ionization due to ExB drift is balanced by reduction of plasma confinement. Uniformity of average exposure to the plasma is further increased by rotation of the magnetic field. Uniformity of plasma potential or wafer bias is further improved by modulation of the radio frequency (RF) power used to form the plasma in synchronism with decreases in the magnetic field during switching for magnetic field rotation.

摘要翻译： 通过使用不均匀的梯度磁场，通过包括基波频率的波形的电磁体的不对称激励来降低等离子体密度和电位的均匀性。 磁场强度或强度在等离子体内的能量电子的ExB漂移方向上减小，这倾向于在等离子体中引起额外的电离和等离子体密度和电位的梯度。 因此，通过减少等离子体限制来平衡由ExB漂移造成的电离的增加。 平均暴露于等离子体的均匀性通过磁场的旋转进一步增加。 通过与用于磁场旋转的切换期间的磁场的减小同步地调制用于形成等离子体的射频（RF）功率来进一步提高等离子体电位或晶片偏置的均匀性。

公开(公告)号：US5241245A

公开(公告)日：1993-08-31

申请号：US879663

申请日：1992-05-06

申请人： Michael S. Barnes ,  Dennis K. Coultas ,  John G. Forster ,  John H. Keller

发明人： Michael S. Barnes ,  Dennis K. Coultas ,  John G. Forster ,  John H. Keller

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01P7/00

CPC分类号： H01J37/321

摘要： An optimized helical resonator which increases the plasma density for efficient processing of semiconductor wafers is characterized by a low inductance and, hence, a low Q. A first embodiment uses either a distributed or lumped capacitance to reduce the value of .omega.L to less than about 200 Ohms. A second embodiment uses a flat spiral coil having a low value of .omega.L and resonant as a 1/4 or 1/2 wave resonator. A third embodiment combines features of the first two embodiments using both spiral and solenoid coils as the helical resonator.

摘要翻译： 提高用于半导体晶片的有效处理的等离子体密度的优化螺旋谐振器的特征在于低电感，因此具有低Q.第一实施例使用分布式或集总电容将ωL的值减小到小于约 200欧姆 第二实施例使用具有低ΩΩL值并且谐振的扁平螺旋线圈作为1/4或1/2波形谐振器。 第三实施例组合了使用螺旋和螺线管线圈的前两个实施例的特征作为螺旋谐振器。

公开(公告)号：US08622013B2

公开(公告)日：2014-01-07

申请号：US13119035

申请日：2009-09-16

申请人： John H. Keller

发明人： John H. Keller

IPC分类号： B63B1/32

CPC分类号： B63B1/18

摘要： A step shape in a planing hull for water craft and more particularly for sailboards, surfboard or PWC for increasing the lift in front of the step and decreasing it in back at high planing speed, which has dynamic lift directly behind the step when the hull is traveling at a transition speed between displacement mode and planing mode, but at high planing speed it does not have lift directly behind the step. The hull has increased speed because the lift behind the step at transition speed allows the position of the step to be moved forward and in one embodiment has cambered surface (9) in front of the step. This step does not go across the full width of the hull such that there is a continuous planing surface in front of the fins or other means, which it is desirous that they not ventilate, and fin or other means has more ventilation resistance in another embodiment.

摘要翻译： 在水上工艺的平面船体中形成一个台阶，特别是帆板，冲浪板或PWC，用于增加台阶前的升力，并以高刨削速度将其降低回来，当船体为 以位移模式和刨削模式之间的过渡速度行驶，但是在高刨床速度下，它不会直接在踏板后面。 船体具有增加的速度，因为在转变速度之后的踏板上的升力允许台阶的位置向前移动，并且在一个实施例中在台阶前面具有弧形表面（9）。 该步骤不会穿过船体的整个宽度，使得在翼片或其他装置前面存在连续的刨削表面，这是希望它们不通风的，并且翅片或其它装置在另一个实施例中具有更多的通风阻力 。

公开(公告)号：US06595151B2

公开(公告)日：2003-07-22

申请号：US09867437

申请日：2001-05-31

申请人： John H. Keller

发明人： John H. Keller

IPC分类号： B63B3500

CPC分类号： B63B1/20 ,  B63B35/7906 ,  B63B35/792 ,  B63B35/7926 ,  B63B35/7953 ,  B63B2001/201 ,  B63B2001/202 ,  B63B2001/206

摘要： High performance of a sailboard is achieved over a wider range of wind and water conditions by providing a hull having two or more planing surfaces which may differ in shape and/or aspect ratio. Drag due to suction at steps between planing surfaces is reduced by venting to the air. Cusp shaping of the respective planing surfaces can reduce and stabilize the angle of attack at the displacement/planing transition without causing fore-and-aft pitching effects known as porpoising.

公开(公告)号：US06323493B1

公开(公告)日：2001-11-27

申请号：US09383772

申请日：1999-08-26

申请人： John H. Keller ,  Kathleen J. Keller

发明人： John H. Keller ,  Kathleen J. Keller

IPC分类号： H01J3700

CPC分类号： H01J37/3266 ,  H01J37/04

摘要： Spreading of an ion beam when passing through a dipole magnet is reduced or suppressed by electrostatic ion beam confinement which supplements magnetic confinement which may be provided. The magnetic confinement is enhanced by the provision of a magnetic mirror through concentration and localized increase of the dipole field with a concave profile of the pole pieces faces and/or provision of permanent magnets or localized regions of material of increased permeability to form magnetic cusps. Pitch and geometry of convex portions of the pole piece faces are adjusted to increase the mirror ratio and the location of the maximum mirror field relative to the thickness of a graphite or insulating liner which may be employed. Electrostatic confinement elements in the form of negatively charged electrodes and/or electrically isolated electrodes or insulators which assume a negative charge. Ionization of plasma between the pole pieces may be enhanced by application of a VHF/UHF field having a frequency of about 40 MHz to 100 MHZ or higher.

摘要翻译： 当通过偶极子磁体时，离子束的扩散通过静电离子束限制被减少或抑制，这补充了可以提供的磁约束。 通过集中提供磁镜并通过极片面的凹形轮廓和/或提供永久磁体或增加渗透性的材料的局部区域形成磁尖来提供磁镜来增强磁约束。 调节极片面的凸起部分的几何形状和镜片面的几何形状，以增大镜面比率和最大镜面相对于可采用的石墨或绝缘衬垫的厚度的位置。 具有带负电荷的电极和/或电隔离电极或绝缘体形式的静电限制元件，其承担负电荷。 可以通过施加具有约40MHz至100MHz或更高频率的VHF / UHF场来增强极片之间的等离子体的电离。

公开(公告)号：US6028394A

公开(公告)日：2000-02-22

申请号：US47095

申请日：1998-03-24

申请人： John H. Keller ,  Dennis K. Coultas

发明人： John H. Keller ,  Dennis K. Coultas

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/321 ,  H01J37/3266 ,  H01J37/32678

摘要： An apparatus and method for producing a cold electron plasma for etching a work piece. An electromagnetic wave is generated at a first frequency to produce a plasma in a hot plasma region of the etching chamber, the plasma having positive ions, cold electrons, and hot electrons. A plurality of magnetic coils are disposed about the perimeter of the etching chamber for generating a rotating magnetic field with an electron cyclotron resonance at a second frequency. The rotating magnetic field has a magnetic potential such that the rotating magnetic field: (i) allows the positive ions and the cold electrons to diffuse from the plasma through the rotating magnetic field to produce the cold electron plasma in a cold plasma region over the work piece, and (ii) inhibits the hot electrons from the plasma from diffusing through the rotating magnetic field to the cold electron plasma.

摘要翻译： 一种用于制造用于蚀刻工件的冷电子等离子体的装置和方法。 在第一频率产生电磁波，以在蚀刻室的热等离子体区域产生等离子体，等离子体具有正离子，冷电子和热电子。 围绕蚀刻室的周边设置多个磁性线圈，用于产生具有第二频率的电子回旋共振的旋转磁场。 旋转磁场具有磁电势，使得旋转磁场：（i）允许正离子和冷电子从等离子体扩散通过旋转磁场，以在工作中的冷等离子体区域中产生冷电子等离子体 并且（ii）抑制来自等离子体的热电子通过旋转磁场扩散到冷电子等离子体。

公开(公告)号：US5587045A

公开(公告)日：1996-12-24

申请号：US430040

申请日：1995-04-27

申请人： John H. Keller ,  Gregory Costrini

发明人： John H. Keller ,  Gregory Costrini

IPC分类号： H01J37/32 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32706 ,  H01J37/32963

摘要： Apparatus controls a wafer potential in a plasma system when the plasma is off to keep the wafer slightly negative at all times in order to reduce and eliminate the collection of charged particles on the wafer. The apparatus allows the wafer bias to be reduced to a small negative voltage and then holds that voltage. This greatly reduces the net positive flux to the wafer. A diode and a programmed power supply hold a minimum negative voltage on the back of the wafer electrode when the plasma density is decaying to zero.

摘要翻译： 当等离子体关闭时，设备控制等离子体系统中的晶圆电位，以使晶片始终保持微小的负值，以便减少和消除晶片上带电粒子的收集。 该装置允许将晶片偏压降低到小的负电压，然后保持该电压。 这大大降低了晶片的净正通量。 当等离子体密度衰减到零时，二极管和编程电源在晶片电极的背面保持最小的负电压。

公开(公告)号：US5561585A

公开(公告)日：1996-10-01

申请号：US470612

申请日：1995-06-06

申请人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

发明人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  H01L21/6831 ,  Y10T279/23

摘要： An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing. An alternate embodiment further suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

公开(公告)号：US5467249A

公开(公告)日：1995-11-14

申请号：US169903

申请日：1993-12-20

申请人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

发明人： Michael S. Barnes ,  John H. Keller ,  Joseph S. Logan ,  Robert E. Tompkins ,  Robert P. Westerfield, Jr.

IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  H01L21/6831 ,  Y10T279/23

摘要： An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing, further suppressing the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

摘要翻译： 静电卡盘的电极相对于由晶片上的等离子体引起的自偏置电位偏置，从而提供改进的击穿耐性，尽管在处理期间晶片电位发生变化，进一步抑制了背面之间的真空电弧的形成 通过插入导电保护环处于自偏压电位，从而在最近的电极和晶片之间限定等电位区域来处理正在处理的晶片和卡盘的主体。