利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.018 秒)

    Reactive ion etching of aluminum
    2.
    发明授权
    Reactive ion etching of aluminum 失效
    铝的反应离子蚀刻

    公开(公告)号：US3994793A

    公开(公告)日：1976-11-30

    申请号：US580102

    申请日：1975-05-22

    申请人： Joseph M. Harvilchuck ,  Joseph S. Logan ,  William C. Metzger ,  Paul M. Schaible

    发明人： Joseph M. Harvilchuck ,  Joseph S. Logan ,  William C. Metzger ,  Paul M. Schaible

    IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/32 ,  C23C15/00 ,  B01K1/00 ,  C23F1/00

    CPC分类号： H01L21/32 ,  H01L21/3065

    摘要： A process for etching aluminum wherein a masked layer of aluminum, supported on a substrate, is exposed to a plasma formed by imposing an RF voltage across at least two spaced electrodes in an ambient including a gas selected from the group consisting of CCl.sub.4, Cl.sub.2, Br.sub.2, HCl. The resultant conditions provide a reactive environment where the aluminum is bombarded with chlorine or bromine ions. The aluminum reacts with chlorine or bromine ions to form an aluminum chloride or bromide compound, which is volatile at the temperature of the sputtered substrate.

    摘要翻译： 一种用于蚀刻铝的方法，其中支撑在基底上的铝掩模层暴露于通过在包括选自CCl 4，Cl 2， Br2，HCl。 所得到的条件提供了铝与氯或溴离子轰击的反应环境。 铝与氯或溴离子反应形成氯化铝或溴化物，其在溅射底物的温度下是挥发性的。

    Low contamination RF sputter deposition apparatus
    4.
    发明授权
    Low contamination RF sputter deposition apparatus 失效
    低污染RF溅射沉积设备

    公开(公告)号：US4818359A

    公开(公告)日：1989-04-04

    申请号：US127540

    申请日：1987-12-01

    申请人： Fletcher Jones ,  Joseph S. Logan

    发明人： Fletcher Jones ,  Joseph S. Logan

    IPC分类号： C23C14/34 ,  H01J37/32

    CPC分类号： H01J37/32082 ,  C23C14/34 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32706

    摘要： A high rate, low contamination, non-reactive sputter etching or deposition apparatus is disclosed herein. The apparatus is comprised of a pair of parallel plate electrodes, cathode and substrate and an additional or wall electrode means surrounding said other electrode means. The wall electrode can be made to be coplanar with said other electrodes and the area of said electrodes are designed so that the wall electrode is resputtered eliminating contamination. The electrodes are housed in a vacuum chamber with inlet means for introducing a non-reactive gas into said chamber. Means are provided for supplying said RF voltage to said electrodes both in and out of phase and for varying the magnitude of the substrate electrode RF voltage with respect to the magnitude of the cathode voltage. Thick insulator rings are used to reduce stray capacitance between the wall electrode and ground whereby the outer chamber (normally grounded) forms a low inductance path between the cathode electrode and acts as a shield for the inner chamber RF potential.

    摘要翻译： 本文公开了高速率，低污染，非反应性溅射蚀刻或沉积设备。 该装置包括一对平行板电极，阴极和基板以及围绕所述另一电极装置的附加或壁电极装置。 壁电极可以制成与所述其它电极共面，并且所述电极的面积被设计成使得壁电极被重新投射以消除污染。 电极容纳在具有用于将非反应性气体引入所述室中的入口装置的真空室中。 提供了用于将所述RF电压提供给相位和不相位的所述电极并且用于相对于阴极电压的幅度改变衬底电极RF电压的大小的装置。 厚绝缘环用于减少壁电极和地面之间的杂散电容，由此外室（通常接地）在阴极之间形成低电感路径，并充当内室RF电位的屏蔽。

    Hollow cathode enhanced plasma for high rate reactive ion etching and deposition
    5.
    发明授权
    Hollow cathode enhanced plasma for high rate reactive ion etching and deposition 失效
    用于高速反应离子蚀刻和沉积的空心阴极增强等离子体

    公开(公告)号：US4637853A

    公开(公告)日：1987-01-20

    申请号：US759762

    申请日：1985-07-29

    申请人： Bruce Bumble ,  Jerome J. Cuomo ,  Joseph S. Logan ,  Steven M. Rossnagel

    发明人： Bruce Bumble ,  Jerome J. Cuomo ,  Joseph S. Logan ,  Steven M. Rossnagel

    IPC分类号： H05K3/08 ,  C23C14/34 ,  C23F1/04 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

    CPC分类号： H01J37/32082 ,  C23C14/34 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/3341

    摘要： A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.According to a further embodiment, the hollow cathode electrode structure is characterized by a single plate having a plurality of cylindrical chambers or holes therein, each hole producing a hollow cathode glow when the system is energized. The aspect ratio (largest dimension of the chamber cross-section/depth of the chamber) for this embodiment should be at least 1.5.

    摘要翻译： 用于RF-RIE溅射/蚀刻系统的金属中空阴极电极结构。 电极定义了关键的纵横比空心阴极体积。 根据本发明的一个实施例，电极结构可以由两厘米间隔开的两个紧密间隔的金属元件组成。 元件通过支撑件在其外缘周围电连接和结构连接。 在改进的中空阴极电极结构和通过合适的匹配网络包含它的真空室之间施加RF电压。 从电极外部的点向系统供应等离子体气体，并且使用合适的泵送系统来将操作压力保持在0.1至400毫托范围内。 然后将溅射的样品放置在内部电极表面中用于溅射/蚀刻。 长宽比（元件之一的最长尺寸/元件之间的间隔）应至少为4.根据另一实施例，中空阴极电极结构的特征在于具有多个圆柱形腔室或孔中的单个板， 当系统通电时，每个孔产生空心阴极辉光。 该实施例的纵横比（室的横截面的最大尺寸/室的深度）应至少为1.5。

    Omission of thick Si.sub.3 N.sub.4 layers in ISA schemes
    7.
    发明授权
    Omission of thick Si.sub.3 N.sub.4 layers in ISA schemes 失效
    在ISA方案中省略厚的Si3N4层

    公开(公告)号：US4333794A

    公开(公告)日：1982-06-08

    申请号：US251698

    申请日：1981-04-07

    申请人： Klaus D. Beyer ,  Joseph S. Logan

    发明人： Klaus D. Beyer ,  Joseph S. Logan

    IPC分类号： H01L29/73 ,  H01L21/033 ,  H01L21/205 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L29/732 ,  H01L21/306 ,  H01L21/312

    CPC分类号： H01L21/76232 ,  H01L21/033 ,  H01L21/76229 ,  H01L29/7325 ,  Y10S148/131

    摘要： The present invention provides a process which comprises:(a) producing an ion-implantation resistant island on a substrate;(b) growing ion-implantation resistant sidewalls on the island;(c) implanting a first impurity;(d) removing the sidewalls;(e) implanting a second impurity where the sidewalls were;(f) growing a conformal etchable coating over the surface of the device;(g) masking to define an area spaced from and exterior to the area where the sidewalls were;(h) removing the conformal etchable coating in the area of step (g);(i) etching a deep trench in the area where the conformal coating was removed;(j) implanting a third impurity into the deep trench.Following island removal, the emitter and base of a bipolar transistor are formed in the area where the island existed.

    摘要翻译： 本发明提供了一种方法，其包括：（a）在基板上产生抗离子注入抗岛; （b）在岛上生长离子注入阻力侧壁; （c）植入第一杂质; （d）去除侧壁; （e）在侧壁处植入第二杂质; （f）在装置表面上生长保形蚀刻涂层; （g）掩蔽以限定与侧壁区域隔开并在其外部的区域; （h）在步骤（g）的区域中去除保形蚀刻涂层; （i）蚀刻去除保形涂层的区域中的深沟槽; （j）将第三杂质注入到深沟槽中。 随着岛去除，双极晶体管的发射极和基极形成在岛存在的区域中。