公开(公告)号：US06507043B1

公开(公告)日：2003-01-14

申请号：US09398393

申请日：1999-09-17

申请人： David H. Chow ,  Joel N. Schulman

发明人： David H. Chow ,  Joel N. Schulman

IPC分类号： H01L2988

CPC分类号： H01L29/88

摘要： A method of epitaxially growing backward diodes as well as apparatus grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thin, highly doped layer at the p-n junction in order to steepen the voltage drop at the junction, and thereby increase the electric field. By tailoring the p and n doping levels as well as adjusting the thin, highly doped layer, backward diodes may be consistently produced and may be tailored in a relatively easy and controllable fashion for a variety of applications. The use of the thin, highly doped layer provided by the present invention is discussed particularly in the context of InGaAs backward diode structures, but may be tailored to many diode types.

摘要翻译： 本文提出了外延生长后向二极管的方法以及通过该方法生长的装置。 更具体地说，本发明利用诸如分子束外延的外延生长技术，以便在p-n结处产生薄的高掺杂层，以便使结点处的电压降变得更高，从而增加电场。 通过调整p和n掺杂水平以及调整薄的高掺杂层，可以一致地产生后向二极管，并且可以针对各种应用以相对容易和可控的方式进行调整。 本发明提供的薄的高掺杂层的使用在InGaAs后向二极管结构的上下文中被特别讨论，但是可以针对许多二极管类型而定制。

公开(公告)号：US5489786A

公开(公告)日：1996-02-06

申请号：US323200

申请日：1994-10-14

申请人： David H. Chow ,  Joel N. Schulman

发明人： David H. Chow ,  Joel N. Schulman

IPC分类号： H01L29/88 ,  H01L29/205

CPC分类号： B82Y10/00 ,  H01L29/882

摘要： A current-controlled resonant tunneling diode (RTD) having an InAs quantum well, AlGaSb barriers and InAs cladding layers is disclosed. The RTD of this invention displays an S-shaped negative differential resistance in its I-V relationship. As a result, the RTD displays the bistability necessary to greatly enhance the speed of operation of many key electronic components by eliminating the need for large load resistances in the circuit design.

摘要翻译： 公开了具有InAs量子阱，AlGaSb势垒和InAs覆层的电流控制谐振隧穿二极管（RTD）。 本发明的RTD以其I-V关系显示S形负差动电阻。 因此，RTD显示了通过消除对电路设计中的大负载电阻的需要来显示双重性，从而大大提高许多关键电子元件的操作速度。

公开(公告)号：US4760579A

公开(公告)日：1988-07-26

申请号：US880853

申请日：1986-07-01

申请人： Joel N. Schulman ,  Kavasseri V. Vaidyanathan ,  Arthur L. Smirl

发明人： Joel N. Schulman ,  Kavasseri V. Vaidyanathan ,  Arthur L. Smirl

IPC分类号： H01S5/00 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3415 ,  H01S5/3416

摘要： A resonant quantum well laser incorporates semiconductor barriers on one or both sides of the quantum well to increase the charge density within the quantum well. The composition of the injection layers can be tailored in a manner that the energies of the charge carriers in the injection layers are about that of a resonant energy level for that type of charge carrier in the quantum well. The barrier layers on one or both sides of the quantum well enhance the probability of the charge carrier being in the well for a longer time and travelling a longer distance, increasing the chance of scattering. The charge carriers, electrons or holes, can move from their respective injection layers into nearly identical energy levels within the quantum well, by tunneling through the thin barrier layers. The number of carriers which are available to transfer into the lasting energy level is increased, thereby increasing the efficiency of the laser and lowering its threshold current.

摘要翻译： 谐振量子阱激光器在量子阱的一侧或两侧结合有半导体势垒，以增加量子阱内的电荷密度。 注入层的组成可以以注入层中的电荷载流子的能量约为量子阱中该类型的电荷载体的共振能级的能量来定制。 量子阱的一侧或两侧上的阻挡层增强了电荷载体在阱中较长时间并行进更长距离的可能性，增加了散射的机会。 电荷载流子，电子或空穴可以通过隧穿穿过薄的阻挡层，从它们各自的注入层移动到量子阱内几乎相同的能级。 可用于转移到持续能量级的载体的数量增加，从而增加激光器的效率并降低其阈值电流。

公开(公告)号：US07700969B1

公开(公告)日：2010-04-20

申请号：US11700442

申请日：2007-01-30

申请人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

发明人： Joel N. Schulman ,  David H. Chow ,  Chanh Nguyen

IPC分类号： H01L29/74 ,  H01L29/80 ,  H01S3/00

CPC分类号： H01L29/885 ,  H01L29/205

摘要： A semiconductor device exhibiting interband tunneling with a first layer with a first conduction band edge with an energy above a first valence band edge, with the difference a first band-gap. A second layer with second conduction band edge with an energy above a second valence band edge, with the difference a second band-gap, and the second layer formed permitting electron carrier tunneling transport. The second layer is between the first and a third layer, with the difference between the third valence band edge and the third conduction band edge a third band-gap. A Fermi level is nearer the first conduction band edge than the first valence band edge. The second valence band edge is beneath the first conduction band edge. The second conduction band edge is above the third valence band edge. The Fermi level is nearer the third valence band edge than to the third conduction band edge.

摘要翻译： 一种半导体器件，其具有与具有第一价带边缘以上的能量的第一导带边缘的第一层的带间隧穿，其差异为第一带隙。 具有第二导带边缘的第二层，其具有高于第二价带边缘的能量，所述差异为第二带隙，并且所述第二层形成为允许电子载流子隧道输送。 第二层在第一和第三层之间，第三价带边缘和第三导带边缘之间的差异是第三带隙。 费米能级比第一价带边缘更接近第一导带边缘。 第二价带边缘在第一导带边缘之下。 第二导带边缘高于第三价带边缘。 费米能级比第三导带边缘更接近第三价带边缘。

公开(公告)号：US06635907B1

公开(公告)日：2003-10-21

申请号：US09441903

申请日：1999-11-17

申请人： Chanh N. Nguyen ,  Joel N. Schulman ,  David H. Chow

发明人： Chanh N. Nguyen ,  Joel N. Schulman ,  David H. Chow

IPC分类号： H01L29772

CPC分类号： H01L29/88

摘要： A backward diode including a heterostructure consisting of a first layer of InAs and second layer of GaSb or InGaSb with an interface layer consisting of an aluminum antimonide compound is presented. It is also disclosed that the presence of AlSb in the interface enhances the highly desirable characteristic of nonlinear current-voltage (I-V) curve near zero bias. The backward diode is useful in radio frequency detection and mixing. The interface layer may be one or more layers in thickness, and may also have a continuously graded AlGaSb layer with a varying Al concentration in order to enhance the nonlinear I-V curve characteristic near zero bias.

摘要翻译： 提出了包括由第一层InAs和第二层GaSb或InGaSb组成的异质结构的后向二极管，其中由锑化锑化合物组成的界面层。 还公开了在界面中AlSb的存在增强了接近零偏压的非线性电流 - 电压（I-V）曲线的非常期望的特性。 反向二极管可用于射频检测和混合。 界面层可以是一个或多个厚度的层，并且还可以具有具有变化的Al浓度的连续渐变的AlGaSb层，以便增强零偏压附近的非线性I-V曲线特性。

公开(公告)号：US06376858B1

公开(公告)日：2002-04-23

申请号：US09196541

申请日：1998-11-20

申请人： Joel N. Schulman

发明人： Joel N. Schulman

IPC分类号： H01L29205

CPC分类号： H01L29/122 ,  B82Y10/00 ,  H01L29/882

摘要： A tunnel diode has a quantum well having at least one layer of semiconductor material. The tunnel diode also has a pair of injection layers on either side of the quantum well. The injection layers comprise a collector layer and an emitter layer. A barrier layer is positioned between each of the injection layers and the quantum well. The quantum well has an epitaxial relationship with the emitter layer. An amount of one element of the well layer is increased to increase the lattice constant a predetermined amount. The lattice constant may have a reduction in the conduction band energy. A second element is added to the well layer to increase the conduction band energy but not to change the lattice constant. By controlling the composition in this matter, the negative resistance, and thus the effective mass, may be controlled for various diode constructions.

摘要翻译： 隧道二极管具有至少一层半导体材料的量子阱。 隧道二极管在量子阱的两侧也具有一对注入层。 注入层包括集电极层和发射极层。 阻挡层位于每个注入层和量子阱之间。 量子阱与发射极层具有外延关系。 增加阱层的一个元素的量以增加晶格常数预定量。 晶格常数可能导致导带能量的降低。 将第二个元素添加到阱层中以增加导带能量，但不改变晶格常数。 通过控制该物质的组成，可以控制各种二极管结构的负电阻，从而有效质量。

公开(公告)号：US5296721A

公开(公告)日：1994-03-22

申请号：US923397

申请日：1992-07-31

申请人： Joel N. Schulman ,  David H. Chow

发明人： Joel N. Schulman ,  David H. Chow

IPC分类号： H01L29/12 ,  H01L29/88 ,  H01L29/205 ,  H01L29/72

CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L29/882

摘要： A double barrier tunnel diode (10) has a quantum well (12), a pair of electron injection layers (16) on either side of the quantum well (12), and a barrier layer (14) between each of the electron injection layers (16) and the quantum well (12), in a strained biaxial epitaxial relationship with the quantum well (12). The material of the quantum well (12) is chosen such that the biaxial strain is sufficient to reduce the energy of heavy holes in the quantum well (12) to less than the energy of the conduction band minimum energy of the electron injection layers (16). Preferably the quantum well (12) is made of gallium antimonide with from about 1 to about 40 atomic percent arsenic alloyed therein, the electron injection layers (16) are made of indium arsenide, and the barrier layers (14) are made of aluminum antimonide.

摘要翻译： 双势垒隧道二极管（10）具有量子阱（12），量子阱（12）两侧的一对电子注入层（16）和每个电子注入层之间的阻挡层（14） （16）和量子阱（12）在与量子阱（12）的应变双轴外延关系中。 选择量子阱（12）的材料使得双轴应变足以将量子阱（12）中的重孔的能量减小到小于电子注入层（16）的导带最小能量的能量 ）。 优选地，量子阱（12）由其中合金化约1至约40原子％的砷化镓锑制成，电子注入层（16）由砷化铟制成，并且阻挡层（14）由锑化锑 。

公开(公告)号：US4780749A

公开(公告)日：1988-10-25

申请号：US880850

申请日：1986-07-01

申请人： Joel N. Schulman

发明人： Joel N. Schulman

IPC分类号： H01L29/201 ,  H01L29/205 ,  H01L29/76 ,  H01L29/88

CPC分类号： B82Y10/00 ,  H01L29/205 ,  H01L29/7606 ,  H01L29/882

摘要： A double barrier tunnel diode, wherein a central quantum well is disposed between a pair of barrier layers to form a quantum barrier, the barrier layers having a composition such that a resonance energy level is created in the quantum well layer, and having a thickness sufficiently small that electrons can tunnel through the quantum barrier under an applied voltage. The quantum well and barrier layers are disposed between two electron injection layers having compositions selected so that the conduction band minimum energy for electrons in the injection layers is about that of, but less than, the resonance energy level of the quantum well. Electrons pass through the quantum barrier by tunneling, upon application of a small voltage across the double barrier tunnel diode sufficient to raise electrons near the conduction band minimum energy of the injection layer to the resonance energy level of the quantum well. The internal voltage necessary for tunneling is reduced, as compared with conventional double barrier tunnel diodes. A higher tunneling current and a higher peak-to-valley current ratio over the negative resistance range are obtained, and the DC operating point voltage is reduced.

摘要翻译： 双势垒隧道二极管，其中中心量子阱设置在一对阻挡层之间以形成量子势垒，所述阻挡层具有使得在量子阱层中产生谐振能级并且具有足够的厚度的组成 电子可以在施加的电压下穿过量子势垒。 量子阱和阻挡层设置在具有选择的组成的两个电子注入层之间，使得注入层中的电子的导带最小能量大约为量子阱的谐振能量级，但小于该量子阱的谐振能级。 电子穿过量子势垒通过隧道施加一个小的电压跨越双阻挡隧道二极管足以使电子靠近喷射层的导带最小能量到量子阱的共振能量水平。 与传统的双阻挡隧道二极管相比，隧道所需的内部电压降低。 获得了比负电阻范围更高的隧穿电流和较高的峰谷电流比，并降低了直流工作点电压。