公开(公告)号：US06644965B2

公开(公告)日：2003-11-11

申请号：US10061411

申请日：2002-02-04

申请人： Jun Ookura ,  Koji Harada

发明人： Jun Ookura ,  Koji Harada

IPC分类号： F27D500

CPC分类号： H01L21/67248

摘要： Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

公开(公告)号：US06332751B1

公开(公告)日：2001-12-25

申请号：US09538736

申请日：2000-03-30

申请人： Seiji Kozawa ,  Naruaki Iida ,  Jun Ookura

发明人： Seiji Kozawa ,  Naruaki Iida ,  Jun Ookura

IPC分类号： B65H900

CPC分类号： B65H9/00 ,  B65H9/20

摘要： In centering a transfer device so that tweezers of the transfer device transfer a substrate to a predetermined delivery position on a spin chuck when the substrate is delivered to a coating unit by means of the transfer device, the substrate is transferred onto the spin chuck in the coating unit by means of the tweezers, a positional deviation amount of the substrate with respect to the delivery position on the chuck is detected by a detecting device, a positional deviation amount of the tweezers is computed based on this detection value, and a position at which the tweezers deliver the substrate is corrected based on the positional deviation amount of the tweezers. Thus, centering of the substrate transfer device can be performed automatically in a short time.

摘要翻译： 以转印装置为中心，使得当基板通过转印装置输送到涂布单元时，转印装置的镊子将基底转移到旋转卡盘上的预定的输送位置，基板被转印到旋转卡盘中 通过镊子涂布单元，通过检测装置检测基板相对于卡盘上的输送位置的位置偏移量，基于该检测值计算镊子的位置偏差量，以及位置偏移量 基于镊子的位置偏差量校正镊子输送基板。 因此，可以在短时间内自动进行基板输送装置的定心。

公开(公告)号：US07510611B2

公开(公告)日：2009-03-31

申请号：US11091760

申请日：2005-03-29

申请人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

发明人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

IPC分类号： B05B3/00 ,  B05C11/02 ,  B05C11/00 ,  B08B3/00

CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D1/02

摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.

公开(公告)号：US06973370B2

公开(公告)日：2005-12-06

申请号：US10859340

申请日：2004-06-03

申请人： Kazuhiko Ito ,  Kazutoshi Ishimaru ,  Jun Ookura ,  Michio Kinoshita ,  Yuichi Douki

发明人： Kazuhiko Ito ,  Kazutoshi Ishimaru ,  Jun Ookura ,  Michio Kinoshita ,  Yuichi Douki

IPC分类号： H01L21/68 ,  B05B12/12 ,  B05B13/02 ,  H01L21/00 ,  G06F7/00

CPC分类号： H01L21/67259 ,  B05B12/122 ,  B05B13/0228 ,  Y10S414/136

摘要： A substrate processing apparatus can align a substrate with a high precision and a high speed by monitoring a mark formed on a surface of the substrate; operating an amount of misalignment between the center of the substrate and a rotation center of a substrate support member; determining a presence of the misalignment and adjusting the substrate such that the center of the substrate coincides with the rotation center of the substrate support member.

摘要翻译： 基板处理装置可以通过监视形成在基板的表面上的标记来对准基板的高精度和高速度; 操作所述基板的中心与基板支撑构件的旋转中心之间的未对准量; 确定不对准的存在并调整衬底，使得衬底的中心与衬底支撑构件的旋转中心重合。

公开(公告)号：US06884294B2

公开(公告)日：2005-04-26

申请号：US10122390

申请日：2002-04-16

申请人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

发明人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

IPC分类号： B05D1/00 ,  B05D1/02 ,  H01L21/00 ,  B05C5/00

CPC分类号： H01L21/6715 ,  B05D1/005 ,  B05D1/02

摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.

摘要翻译： 当喷嘴从晶片中心移动到晶片外部区域上时，将涂布溶液喷涂在从设置在晶片上方的喷嘴水平保持的旋转晶片上，从而将涂布溶液螺旋地喷涂在晶片上。 当涂层溶液已经到达晶片外部区域时，喷嘴停止，并且在晶片旋转的同时将涂布溶液圆形喷涂在晶片外部区域上。 包括涂膜和溶剂的组分的涂布溶液可以喷涂在晶片和涂布溶液的待涂覆的第一区域上，并且用于涂膜的溶剂可以喷涂在位于第一区域外部的第二边缘区域 的晶片。

公开(公告)号：US06776845B2

公开(公告)日：2004-08-17

申请号：US10152562

申请日：2002-05-23

申请人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

发明人： Tomohide Minami ,  Shinichi Sugimoto ,  Takahiro Kitano ,  Jun Ookura ,  Hiroaki Kurishima

IPC分类号： B05C1100

CPC分类号： H01L21/67253 ,  B05D1/005 ,  B05D1/26 ,  H01L21/6715

摘要： When a coating film is formed on a substrate, the inplane uniformity of the thickness of the coating film is enhanced to improve through put. Above the substrate, there are provided main and auxiliary nozzles separately movable, and monitoring means for monitoring the state of the surface of the substrate to detect the occurrence of an uncoated region on the surface of the substrate. On the basis of previously prepared coating data, a coating liquid is spirally applied on the substrate by the main nozzle. Then, if the monitoring means detects the occurrence of the uncoated region in a coated region in which the coating liquid has been applied by the main nozzle, a control part detects whether it is required to supply the coating liquid to the uncoated region. If it is required, the coating liquid is supplied to the uncoated region by the auxiliary nozzle. On the other hand, the portion of occurrence of the uncoated region has been grasped by the control part. If the uncoated region is continuously detected at the same place with respect to two substrates, it is determined that the setting of coating data is erroneous, and this is modified.

公开(公告)号：US06507770B2

公开(公告)日：2003-01-14

申请号：US09874272

申请日：2001-06-06

申请人： Masanori Tateyama ,  Kenichi Okubo ,  Jun Ookura

发明人： Masanori Tateyama ,  Kenichi Okubo ,  Jun Ookura

IPC分类号： G06F700

CPC分类号： H01L21/67276 ,  G05B19/41865 ,  G05B2219/31407 ,  G05B2219/32305 ,  G05B2219/45031 ,  Y02P90/20

摘要： A system for successively extracting unprocessed substrates from a cassette, successively conveying the extracted substrates to a plurality of processing units, causing the processing units to process the substrates, and successively returning processed substrates to a cassette is disclosed. In the system, corresponding to a recipe that contains process conditions for each of at least one lot, a process start prediction time at which processes of each lot start and a process completion prediction time at which processes for each lot are completed are calculated for at least two processes. Corresponding to the process start prediction time and the process completion prediction time, at least one of optimum processing units that optimize processes for each lot is selected for each lot.

摘要翻译： 公开了一种用于从盒中连续提取未处理的基板的系统，将提取的基板连续地传送到多个处理单元，使处理单元处理基板，并将处理后的基板连续地返回到盒。 在该系统中，对应于包含至少一批中的每一批的处理条件的配方，每批次的处理开始的处理开始预测时间和完成每个批次的处理的处理完成预测时间被计算为 最少两个进程。 对应于过程开始预测时间和处理完成预测时间，为每个批次选择优化每个批次的处理的最优处理单元中的至少一个。

公开(公告)号：US06461438B1

公开(公告)日：2002-10-08

申请号：US09713891

申请日：2000-11-16

申请人： Jun Ookura ,  Koji Harada

发明人： Jun Ookura ,  Koji Harada

IPC分类号： C23C1600

CPC分类号： H01L21/67248 ,  G05B11/42 ,  G05D23/1917 ,  H01L21/67109

摘要： A substrate cooling unit comprises a cooling plate on which the substrate is placed, a cooling temperature adjusting element which adjusts the cooling plate to a predetermined temperature, a temperature controller which controls a temperature of the cooling temperature adjusting element according to a transfer function, a temperature sensor attached to the cooling plate, and a control parameter changing section which changes at least any one setting of a proportional operation coefficient, integral time or derivative time among control parameters in the transfer function based on a temperature of the cooling plate detected by the temperature sensor after the substrate that is an object to be cooled is placed on the cooling plate.

摘要翻译： 基板冷却单元包括其上放置基板的冷却板，将冷却板调节到预定温度的冷却温度调节元件，根据传递函数来控制冷却温度调节元件的温度的温度控制器， 温度传感器，其安装在冷却板上，以及控制参数变更部，其基于由所述冷却板检测出的所述冷却板的温度，在所述传递函数中的控制参数中的至少任一个比例运算系数，积分时间或微分时间的设定中进行变更 将作为被冷却对象的基板后的温度传感器放置在冷却板上。

公开(公告)号：US06402509B1

公开(公告)日：2002-06-11

申请号：US09653161

申请日：2000-09-01

申请人： Jun Ookura ,  Koji Harada

发明人： Jun Ookura ,  Koji Harada

IPC分类号： F27B514

CPC分类号： H01L21/67248

摘要： Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

摘要翻译： 将晶片的目标处理温度和偏移值列表并预先存储在温度控制器中。 当目标处理温度改变时，基于表中的偏移值计算与晶片的目标处理温度相对应的热板温度。 基于计算值，加热器控制器控制加热器以改变热板温度。 因此，在不同温度下进行热处理的基板热处理装置中，与各温度对应的偏移值自动变化，能够在适当的温度下加热基板。