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公开(公告)号：US20050170087A1
公开(公告)日：2005-08-04
申请号：US11091760
申请日：2005-03-29
CPC分类号： H01L21/6715 , B05D1/005 , B05D1/02
摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.
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公开(公告)号：US07488505B2
公开(公告)日：2009-02-10
申请号：US10885577
申请日：2004-07-08
IPC分类号： B05D3/12
CPC分类号： H01L21/67253 , B05D1/005 , B05D1/26 , H01L21/6715
摘要： When a coating film is formed on a substrate, the inplane uniformity of the thickness of the coating film is enhanced to improve through put. Above the substrate, there are provided main and auxiliary nozzles separately movable, and monitoring means for monitoring the state of the surface of the substrate to detect the occurrence of an uncoated region on the surface of the substrate. On the basis of previously prepared coating data, a coating liquid is spirally applied on the substrate by the main nozzle. Then, if the monitoring means detects the occurrence of the uncoated region in a coated region in which the coating liquid has been applied by the main nozzle, a control part detects whether it is required to supply the coating liquid to the uncoated region. If it is required, the coating liquid is supplied to the uncoated region by the auxiliary nozzle. On the other hand, the portion of occurrence of the uncoated region has been grasped by the control part. If the uncoated region is continuously detected at the same place with respect to two substrates, it is determined that the setting of coating data is erroneous, and this is modified.
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公开(公告)号：US07510611B2
公开(公告)日：2009-03-31
申请号：US11091760
申请日：2005-03-29
CPC分类号： H01L21/6715 , B05D1/005 , B05D1/02
摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.
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公开(公告)号：US06884294B2
公开(公告)日：2005-04-26
申请号：US10122390
申请日：2002-04-16
CPC分类号： H01L21/6715 , B05D1/005 , B05D1/02
摘要： A coating solution is sprayed on a rotating wafer held horizontally from a nozzle provided above the wafer while the nozzle is travelling over the wafer from a wafer center to a wafer outer area, thus spirally spraying the coating solution on the wafer. The nozzle stops when the coating solution has reached the wafer outer area and the coating solution is sprayed in circle on the wafer outer area while the wafer is rotating. A coating solution including a component of a coating film and a solvent may be sprayed on a first area to be coated of the wafer and the coating solution and a solvent for the coating film may be sprayed on a second edge area located outside the first area of the wafer.
摘要翻译： 当喷嘴从晶片中心移动到晶片外部区域上时，将涂布溶液喷涂在从设置在晶片上方的喷嘴水平保持的旋转晶片上，从而将涂布溶液螺旋地喷涂在晶片上。 当涂层溶液已经到达晶片外部区域时，喷嘴停止，并且在晶片旋转的同时将涂布溶液圆形喷涂在晶片外部区域上。 包括涂膜和溶剂的组分的涂布溶液可以喷涂在晶片和涂布溶液的待涂覆的第一区域上，并且用于涂膜的溶剂可以喷涂在位于第一区域外部的第二边缘区域 的晶片。
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公开(公告)号：US06776845B2
公开(公告)日：2004-08-17
申请号：US10152562
申请日：2002-05-23
IPC分类号： B05C1100
CPC分类号： H01L21/67253 , B05D1/005 , B05D1/26 , H01L21/6715
摘要： When a coating film is formed on a substrate, the inplane uniformity of the thickness of the coating film is enhanced to improve through put. Above the substrate, there are provided main and auxiliary nozzles separately movable, and monitoring means for monitoring the state of the surface of the substrate to detect the occurrence of an uncoated region on the surface of the substrate. On the basis of previously prepared coating data, a coating liquid is spirally applied on the substrate by the main nozzle. Then, if the monitoring means detects the occurrence of the uncoated region in a coated region in which the coating liquid has been applied by the main nozzle, a control part detects whether it is required to supply the coating liquid to the uncoated region. If it is required, the coating liquid is supplied to the uncoated region by the auxiliary nozzle. On the other hand, the portion of occurrence of the uncoated region has been grasped by the control part. If the uncoated region is continuously detected at the same place with respect to two substrates, it is determined that the setting of coating data is erroneous, and this is modified.
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公开(公告)号：US07755003B2
公开(公告)日：2010-07-13
申请号：US11965093
申请日：2007-12-27
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
CPC分类号： H01L21/67248
摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。
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公开(公告)号：US20080156785A1
公开(公告)日：2008-07-03
申请号：US11965093
申请日：2007-12-27
申请人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
发明人： Jun Ookura , Eiichi Sekimoto , Hisakazu Nakayama
CPC分类号： H01L21/67248
摘要： A temperature control method for a heat process on a resist film on a substrate includes first and second steps. The first step includes measuring a stepped response waveform of measured temperatures of a substrate at measurement points while changing stepwise each target temperature, then using this result to compose a pulsed response waveform with respect to a change of a pulsed target temperature, then using this result to compose a triangular response waveform with respect to a change of a triangular target temperature, and then using this result to acquire a matrix as relation information showing a relation between the target temperatures and temperatures of the substrate at measurement points. The second step includes acquiring temperature distribution information by use of measured temperatures of the substrate placed on the hot plate, measured at measurement points before adjustment of the target temperatures, and then calculating adjustment information by use of the relation information acquired in the first step and the temperature distribution information, thereby determining adjustment information.
摘要翻译： 在基板上的抗蚀剂膜上的热处理的温度控制方法包括第一和第二步骤。 第一步包括测量测量点处的测量温度的阶梯响应波形，同时逐步改变每个目标温度，然后使用该结果组合相对于脉冲目标温度变化的脉冲响应波形，然后使用该结果 相对于三角形目标温度的变化构成三角形响应波形，然后使用该结果获取表示测量点处的基板的目标温度和温度之间的关系的关系信息的矩阵。 第二步包括通过使用放置在热板上的基板的测量温度来获取温度分布信息，在调整目标温度之前的测量点处测量，然后通过使用在第一步骤中获取的关系信息来计算调整信息;以及 温度分布信息，从而确定调整信息。
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公开(公告)号：US06686571B2
公开(公告)日：2004-02-03
申请号：US10237781
申请日：2002-09-10
申请人： Jun Ookura , Koji Harada
发明人： Jun Ookura , Koji Harada
IPC分类号： H05B102
CPC分类号： H01L21/67248 , G05B11/42 , G05D23/1917 , H01L21/67109
摘要： A substrate cooling unit comprises a cooling plate on which the substrate is placed, a cooling temperature adjusting element which adjusts the cooling plate to a predetermined temperature, a temperature controller which controls a temperature of the cooling temperature adjusting element according to a transfer function, a temperature sensor attached to the cooling plate, and a control parameter changing section which changes at least any one setting of a proportional operation coefficient, integral time or derivative time among control parameters in the transfer function based on a temperature of the cooling plate detected by the temperature sensor after the substrate that is an object to be cooled is placed on the cooling plate.
摘要翻译： 基板冷却单元包括其上放置基板的冷却板，将冷却板调节到预定温度的冷却温度调节元件，根据传递函数来控制冷却温度调节元件的温度的温度控制器， 温度传感器，其安装在冷却板上，以及控制参数变更部，其基于由所述冷却板检测出的所述冷却板的温度，在所述传递函数中的控制参数中的至少任一个比例运算系数，积分时间或微分时间的设定中进行变更 将作为被冷却对象的基板后的温度传感器放置在冷却板上。
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9.发明申请Heat Treatment Method, Recording Medium Having Recorded Program for Executing Heat Treatment Method, and Heat Treatment Apparatus 审中-公开热处理方法，具有用于执行热处理方法的记录程序的记录介质和热处理装置公开(公告)号：US20120031892A1
公开(公告)日：2012-02-09
申请号：US13192635
申请日：2011-07-28
申请人： Kenichi Shigetomi , Jun Ookura
发明人： Kenichi Shigetomi , Jun Ookura
IPC分类号： H05B3/68
CPC分类号： H05B1/0233 , H01L21/67248
摘要： Disclosed is a method of a thermal processing including a first process and a second process. The first process between first wafer (initial wafer) W1 and second wafer (next wafer) W2 (and subsequent wafers W), comprises changing a set temperature of a heating plate from a first temperature to a second temperature which is lower than the first temperature; and initiating a thermal processing for a first substrate before the temperature of the heating plate reaches the second temperature. The second process comprises changing the set temperature of the heating plate from the second temperature to a third temperature which is higher than the second temperature, after the first process for the first substrate is completed; and initiating a thermal processing for a second substrate when the temperature of the heating plate is changed from the third temperature to the second temperature after the temperature of the heating plate reached the third temperature.
摘要翻译： 公开了一种包括第一工艺和第二工艺的热处理方法。 第一晶片（初始晶片）W1和第二晶片（下一个晶片）W2（和随后的晶片W）之间的第一过程包括将加热板的设定温度从第一温度改变到低于第一温度的第二温度 ; 以及在所述加热板的温度达到第二温度之前对第一基板进行热处理。 第二工序是在第一基板的第一工序结束后，将加热板的设定温度从第二温度变更为高于第二温度的第三温度; 以及在所述加热板的温度达到第三温度之后，当所述加热板的温度从第三温度变为第二温度时，对第二基板进行热处理。
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公开(公告)号：US20050016818A1
公开(公告)日：2005-01-27
申请号：US10859340
申请日：2004-06-03
申请人： Kazuhiko Ito , Kazutoshi Ishimaru , Jun Ookura , Michio Kinoshita , Yuichi Douki
发明人： Kazuhiko Ito , Kazutoshi Ishimaru , Jun Ookura , Michio Kinoshita , Yuichi Douki
CPC分类号： H01L21/67259 , B05B12/122 , B05B13/0228 , Y10S414/136
摘要： A substrate processing apparatus can align a substrate with a high precision and a high speed by monitoring a mark formed on a surface of the substrate; operating an amount of misalignment between the center of the substrate and a rotation center of a substrate support member; determining a presence of the misalignment and adjusting the substrate such that the center of the substrate coincides with the rotation center of the substrate support member.
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