PAGE BUFFER ENHANCEMENTS
    11.
    发明公开

    公开(公告)号:US20230305752A1

    公开(公告)日:2023-09-28

    申请号:US18204858

    申请日:2023-06-01

    Abstract: A memory storage system comprising a non-volatile semiconductor memory device comprising a memory array and a plurality of buffers, and a controller in communication with the plurality of buffers. The controller may be configured to issue a command to the non-volatile semiconductor memory device to cause a transfer of a data payload from the controller to a subset of n first buffers of the plurality of buffers. The controller may also be configured to issue a command to the non-volatile semiconductor memory device to cause the non-volatile memory device to transfer a data payload from the memory array to a subset of n first buffers of the plurality of buffers.

    Page buffer enhancements
    12.
    发明授权

    公开(公告)号:US11704061B2

    公开(公告)日:2023-07-18

    申请号:US17203392

    申请日:2021-03-16

    Abstract: A memory storage system comprising a non-volatile semiconductor memory device comprising a memory array and a plurality of buffers, and a controller in communication with the plurality of buffers. The controller may be configured to issue a command to the non-volatile semiconductor memory device to cause a transfer of a data payload from the controller to a subset of n first buffers of the plurality of buffers. The controller may also be configured to issue a command to the non-volatile semiconductor memory device to cause the non-volatile memory device to transfer a data payload from the memory array to a subset of n first buffers of the plurality of buffers.

    DYNAMIC BUFFER CACHING OF STORAGE DEVICES

    公开(公告)号:US20220350746A1

    公开(公告)日:2022-11-03

    申请号:US17867074

    申请日:2022-07-18

    Abstract: Various implementations described herein relate to systems and methods for dynamically managing buffers of a storage device, including receiving, by a controller of the storage device from a host, information indicative of a frequency by which data stored in the storage device is accessed, and in response to receiving the information determining, by the controller, the order by which read buffers of the storage device are allocated for a next read command. The NAND read count of virtual Word-Lines (WLs) are also used to cache more frequently accessed WLs, thus proactively reducing read disturb and consequently increasing NAND reliability and NAND life.

    Systems and methods for scheduling flash operations

    公开(公告)号:US11321022B2

    公开(公告)日:2022-05-03

    申请号:US16731766

    申请日:2019-12-31

    Abstract: Various implementations described herein relate to systems and methods for a solid state drive (SSD) that includes requesting power credits while performing a program or erase operation for a flash memory of the SSD. In response to determining that the requested power credits are rejected, the program or erase operation is suspended and its power credits are released. A read operation may then be performed in response to suspending the program or erase operation and releasing its power credits.

    SUPERBLOCK SIZE MANAGEMENT IN NON-VOLATILE MEMORY DEVICES

    公开(公告)号:US20250044971A1

    公开(公告)日:2025-02-06

    申请号:US18919578

    申请日:2024-10-18

    Abstract: Various implementations described herein relate to systems and methods for managing superblocks, including determining superblocks, including first and second superblocks, in a non-volatile memory storage. The non-volatile memory storage includes independent locations that may be planes or dies. The first superblock includes first blocks corresponding to first independent locations, and the second superblock includes second blocks corresponding to second independent locations. A first number of the first independent locations is less than a number of the independent locations. A second number of the second plurality of independent locations is less than the number of the independent locations.

    System and method for NAND multi-plane and multi-die status signaling

    公开(公告)号:US12169641B2

    公开(公告)日:2024-12-17

    申请号:US18097043

    申请日:2023-01-13

    Abstract: A method for status signaling in a non-volatile memory including a plurality of logical units (LUNs), each of the plurality of LUNs having a status terminal coupled to a common status terminal of the non-volatile memory and a data bus coupled to a common data bus of the non-volatile memory. The method including performing, by a first LUN of the plurality of LUNs, a first set of one or more operations; completing, by the first LUN of the plurality of LUNs, the first set of one or more operations; and sending, by the first LUN via the common terminal, a pulse to a controller responsive to completing the first set of one or more operations.

    Superblock size management in non-volatile memory devices

    公开(公告)号:US12124719B2

    公开(公告)日:2024-10-22

    申请号:US17577888

    申请日:2022-01-18

    Abstract: Various implementations described herein relate to systems and methods for managing superblocks, including determining superblocks, including first and second superblocks, in a non-volatile memory storage. The non-volatile memory storage includes independent locations that may be planes or dies. The first superblock includes first blocks corresponding to first independent locations, and the second superblock includes second blocks corresponding to second independent locations. A first number of the first independent locations is less than a number of the independent locations. A second number of the second plurality of independent locations is less than the number of the independent locations.

    Page buffer enhancements
    20.
    发明授权

    公开(公告)号:US12112070B2

    公开(公告)日:2024-10-08

    申请号:US18204858

    申请日:2023-06-01

    Abstract: A memory storage system comprising a non-volatile semiconductor memory device comprising a memory array and a plurality of buffers, and a controller in communication with the plurality of buffers. The controller may be configured to issue a command to the non-volatile semiconductor memory device to cause a transfer of a data payload from the controller to a subset of n first buffers of the plurality of buffers. The controller may also be configured to issue a command to the non-volatile semiconductor memory device to cause the non-volatile memory device to transfer a data payload from the memory array to a subset of n first buffers of the plurality of buffers.

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