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    MEMORY DEVICE
    11.
    发明申请
    MEMORY DEVICE 有权

    公开(公告)号：US20210091095A1

    公开(公告)日：2021-03-25

    申请号：US16806253

    申请日：2020-03-02

    Applicant: Kioxia Corporation

    Inventor： Tsunehiro INO ,  Kazuhiko YAMAMOTO

    IPC: H01L27/1159 ,  H01L27/11597

    Abstract: According to an embodiment, a memory device includes a first conductive layer extending in a first direction, a second conductive layer extending in the first direction, a third conductive layer extending in a second direction intersecting with the first direction, an insulating layer provided between the first conductive layer and the second conductive layer, and a dielectric layer provided between the first conductive layer and the third conductive layer, and between the insulating layer and the third conductive layer, the dielectric layer having a first thickness thinner than a second thickness, the first thickness being a thickness between the first conductive layer and the third conductive layer, the second thickness being a thickness between the insulating layer and the third conductive layer, and the dielectric layer including an oxide including at least one of hafnium oxide and zirconium oxide.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
    12.
    发明公开
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20240258401A1

    公开(公告)日：2024-08-01

    申请号：US18420264

    申请日：2024-01-23

    Applicant: Kioxia Corporation

    Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI

    IPC: H01L29/51 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

    CPC classification number: H01L29/513 ,  H01L29/517 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

    Abstract: A semiconductor device of embodiments includes: a semiconductor layer; a gate electrode layer including a first conductive layer containing a first material and a second conductive layer between the first conductive layer and the semiconductor layer and containing a second material different from the first material; and a first insulating layer between the semiconductor layer and the gate electrode layer and containing aluminum oxide, the aluminum oxide including α (alpha)-aluminum oxide or θ (theta)-aluminum oxide. The direction of the crystal axis of the aluminum oxide falls within a range of ±10° with respect to a first direction from the semiconductor layer toward the gate electrode layer. The direction of the crystal axis of the first material falls within a range of ±10° with respect to the first direction. The direction of the crystal axis of the second material falls within a range of ±10° with respect to the first direction.

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