Device-Like Metrology Targets
    11.
    发明申请

    公开(公告)号:US20180188663A1

    公开(公告)日:2018-07-05

    申请号:US15442111

    申请日:2017-02-24

    CPC classification number: G03F7/70625 G03F7/70633 G03F7/70683

    Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

    Alignment of multi-beam patterning tool

    公开(公告)号:US10008364B2

    公开(公告)日:2018-06-26

    申请号:US14861502

    申请日:2015-09-22

    Inventor: Nuriel Amir

    CPC classification number: H01J37/3026 G03F9/7019 H01J37/3045 H01J37/3177

    Abstract: Alignment of multi-beam pattern tools includes generating a test pattern having multiple features with a multi-beam patterning tool, acquiring an image standard associated with a test pattern standard, acquiring an image of a portion of the test pattern, comparing the portion of the image of the test pattern to the image standard to identify one or more irregularities between the portion of the image of the test pattern and the image standard, and adjusting one or more beams of the multi-beam patterning tool based on the one or more identified irregularities between the portion of the image of the test pattern and the image standard.

    Metrology targets with filling elements that reduce inaccuracies and maintain contrast

    公开(公告)号:US10002806B2

    公开(公告)日:2018-06-19

    申请号:US14605425

    申请日:2015-01-26

    CPC classification number: H01L22/30 G01N21/4785

    Abstract: The subject application relates to metrology targets with filling elements that reduce inaccuracies and maintain contrast. The present invention provides a metrology target and a method to design the metrology target. The metrology target comprises specified filling elements introduced into identified continuous regions in a given target design, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identified continuous regions. The method includes the steps of identifying continuous regions in a target design, and introducing specified filling elements into the identified continuous regions, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identifying continuous regions. At least one of the identifying and the introducing can be carried out by at least one computer processor.

    METROLOGY TARGETS WITH FILLING ELEMENTS THAT REDUCE INACCURACIES AND MAINTAIN CONTRAST
    14.
    发明申请
    METROLOGY TARGETS WITH FILLING ELEMENTS THAT REDUCE INACCURACIES AND MAINTAIN CONTRAST 有权
    具有减少不准确和维持对比度的填充元素的计量学目标

    公开(公告)号:US20150227675A1

    公开(公告)日:2015-08-13

    申请号:US14605425

    申请日:2015-01-26

    CPC classification number: H01L22/30 G01N21/4785

    Abstract: The subject application relates to metrology targets with filling elements that reduce inaccuracies and maintain contrast. The present invention provides a metrology target and a method to design the metrology target. The metrology target comprises specified filling elements introduced into identified continuous regions in a given target design, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identified continuous regions. The method includes the steps of identifying continuous regions in a target design, and, introducing specified filling elements into the identified continuous regions, wherein parameters of the introduced filling elements are determined by a trade-off between a contrast requirement and an inaccuracy requirement which is associated via production with the identifying continuous regions. At least one of the identifying and the introducing can be carried out by at least one computer processor.

    Abstract translation: 本申请涉及具有减少不准确性并保持对比度的填充元素的计量目标。 本发明提供了一种度量目标和一种设计计量目标的方法。 计量目标包括在给定目标设计中引入到识别的连续区域中的指定填充元素,其中引入的填充元素的参数通过对比度要求和通过生产与所识别的连续区域相关联的不准确性要求之间的折衷来确定 。 该方法包括以下步骤:识别目标设计中的连续区域,以及将指定的填充元素引入所识别的连续区域,其中引入的填充元素的参数通过对比度要求和不准确性要求之间的折衷来确定, 通过生产与识别连续区域相关联。 识别和引入中的至少一个可以由至少一个计算机处理器执行。

    Overlay Targets with Orthogonal Underlayer Dummyfill
    15.
    发明申请
    Overlay Targets with Orthogonal Underlayer Dummyfill 审中-公开
    覆盖目标与正交底层虚拟填充

    公开(公告)号:US20130293890A1

    公开(公告)日:2013-11-07

    申请号:US13898828

    申请日:2013-05-21

    CPC classification number: G01B11/14 G03F7/70633 G03F7/70683

    Abstract: The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.

    Abstract translation: 本公开旨在设计和使用具有正交底层虚拟填充物的覆盖目标。 根据各种实施例,覆盖目标可以包括形成至少一个覆盖目标结构的一个或多个分段覆盖图案元素。 覆盖目标还可以包括形成至少一个虚拟填充目标结构的一个或多个无效模式元素。 一个或多个非活动图案元素中的每一个可以包括沿着与至少一个近似布置的覆盖图案元素的分割轴正交的轴分割的伪填充。 在一些实施例中,目标结构或层中的每一个可以由连续设置在诸如硅晶片的基底上的单独的处理层形成。 在一些实施例中,覆盖层和虚拟填充目标结构可以是双重的或四倍的旋转对称以允许某些制造或度量的优点。

    Compound imaging metrology targets
    16.
    发明授权

    公开(公告)号:US10527951B2

    公开(公告)日:2020-01-07

    申请号:US15057723

    申请日:2016-03-01

    Abstract: Imaging metrology targets and methods are provided, which combine one-dimensional (1D) elements designed to provide 1D imaging metrology signals along at least two measurement directions and two-dimensional (2D) elements designed to provide at least one 2D imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possibly multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. Two dimensional elements may be designed to be periodic to provide additional one dimensional metrology signals.

    Estimating and eliminating inter-cell process variation inaccuracy

    公开(公告)号:US10415963B2

    公开(公告)日:2019-09-17

    申请号:US14727038

    申请日:2015-06-01

    Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

    Multi-layered target design
    19.
    发明授权

    公开(公告)号:US09810620B2

    公开(公告)日:2017-11-07

    申请号:US14620992

    申请日:2015-02-12

    Inventor: Nuriel Amir

    Abstract: Multi-layered targets, design files and design and production methods thereof are provided. The multi-layered targets comprise process layers arranged to have parallel segmentation features at specified regions, and target layer comprising target elements which are perpendicular to the parallel segmentation features of the process layers at the specified regions.

    In-situ metrology
    20.
    发明授权

    公开(公告)号:US09760020B2

    公开(公告)日:2017-09-12

    申请号:US14162110

    申请日:2014-01-23

    Inventor: Nuriel Amir

    Abstract: Metrology methods and systems are provided, which measure metrology targets during the exposure stage using reflected or diffracted exposure illumination or additional simultaneous illumination having longer wavelengths than the exposure illumination. The metrology measurements are used to correct the lithographic process in a short loop, enabling realtime and even predictive error correction. The metrology methods, tools and systems also include defect detection during the exposure stage.

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