Abstract:
There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition containing (A) a resin that contains a repeating unit having a partial structure represented by the specific formula and can decrease the solubility for a developer containing an organic solvent by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an electron beam or an extreme ultraviolet ray, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.
Abstract:
Provided are an actinic-ray-sensitive or a radiation-sensitive resin composition with greater residual film ratio and capable of suppressing pattern collapse and an occurrence of bridge defects after development, and a resist film, a pattern forming method, an electronic device manufacturing method, and an electronic device, each using the same. An actinic-ray-sensitive or radiation-sensitive resin composition includes a resin (P) having a repeating unit (a) represented by following General Formula (I), a compound (B) represented by any of following General Formulae (B-1) to (B-3), and a solvent, in General Formula (I), R0 represents a hydrogen atom or a methyl group, and R1, R2 and R3 each independently represent a straight chain or branched alkyl group.
Abstract:
A pattern forming method includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (C) a tertiary alcohol; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.