PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    11.
    发明申请
    PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
    图案形成方法,电子束敏感或极端超敏感组合物,电阻膜,电子器件的制造方法和电子器件

    公开(公告)号:US20130084438A1

    公开(公告)日:2013-04-04

    申请号:US13613437

    申请日:2012-09-13

    Abstract: There is provided a pattern forming method comprising (1) a step of forming a film by using an electron beam-sensitive or extreme ultraviolet-sensitive resin composition containing (A) a resin that contains a repeating unit having a partial structure represented by the specific formula and can decrease the solubility for a developer containing an organic solvent by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an electron beam or an extreme ultraviolet ray, (2) a step of exposing the film by using an electron beam or an extreme ultraviolet ray, and (4) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.

    Abstract translation: 提供一种图案形成方法,其包括(1)通过使用电子束敏感或极紫外线敏感性树脂组合物形成膜的步骤,所述树脂组合物含有(A)含有具有由具体的 并且可以通过酸的作用降低含有有机溶剂的显影剂的溶解度,和(B)在用电子束或极紫外线照射时能够产生酸的化合物,(2)曝光步骤 通过使用电子束或极紫外线的膜,以及(4)通过使用含有机溶剂的显影剂显影曝光的膜以形成负图案的步骤。

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