公开(公告)号：US06879473B2

公开(公告)日：2005-04-12

申请号：US10486737

申请日：2003-06-12

申请人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

发明人： Takeyuki Sone ,  Kazuhiro Bessho ,  Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Hiroshi Kano

IPC分类号： G01R33/09 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/39

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228

摘要： There are provided a magnetoresistive effect element having a satisfactory magnetic characteristic and a magnetic memory device including this magnetoresistive effect element to produce excellent write/read characteristics.A magnetoresistive effect element 1 has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to produce a magnetoresistive change by a current flowing to the direction perpendicular to the film plane, the magnetization free layer having a normalized resistance ranging from 2000 Ωnm2 to 10000 Ωnm2 where a product of a specific resistance obtained when a current flows to the film thickness direction of the magnetization free layer 7 and a film thickness is defined as the normalized resistance. A magnetic memory device includes this magnetoresistive effect element 1 and bit lines and word lines sandwiching the magnetoresistive effect element 1.

摘要翻译： 提供了具有令人满意的磁特性的磁阻效应元件和包括该磁阻效应元件的磁存储器件，以产生优异的写/读特性。磁阻效应元件1具有一对铁磁层（磁化固定层5和无磁化层 7）通过中间层6彼此相对以通过流向垂直于膜平面的方向的电流产生磁阻变化，所述无磁化层的归一化电阻范围为2000Ω·m -2至10000Ω·m -2 其中当电流流过磁化自由层7的膜厚度方向而获得的电阻率和膜厚度的乘积被定义为归一化电阻。 磁存储器件包括该磁阻效应元件1和夹在磁阻效应元件1上的位线和字线。

公开(公告)号：US20060125034A1

公开(公告)日：2006-06-15

申请号：US10523281

申请日：2003-08-01

申请人： Kazuhiro Ohba ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kang

发明人： Kazuhiro Ohba ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Mizuguchi ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kang

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/16 ,  H01L43/08

摘要： There are provided a magnetoresistive device having excellent magnetic properties and a magnetic memory apparatus including this magnetoresistive device and which has excellent read and write characteristics. A magnetoresistive device has an arrangement including a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) being opposed to each other through an intermediate layer 6 to obtain variations in magnetoresistance by an electric current flowing in the direction perpendicular to the film plane. This magnetoresistive device 1 has the pair of ferromagnetic layers 5, 7 composed of the magnetization fixed layer 5 made of a crystalline ferromagnetic layer provided under the intermediate layer 6 and the magnetization free layer 7 being made of an amorphous ferromagnetic layer being provided above the intermediate layer 6, and the magnetic memory apparatus is composed of this magnetoresistive device 1 and a bit line and a word line sandwiching the magnetoresistive device 1 in the thickness direction.

摘要翻译： 提供了具有优异磁性的磁阻器件和包括该磁阻器件的磁存储器件，并具有优异的读和写特性。 磁阻器件具有包括通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7）的布置，以通过在垂直于膜的方向流动的电流来获得磁阻的变化 飞机 该磁阻器件1具有由设置在中间层6下方的结晶铁磁层构成的磁化固定层5和由非晶铁磁层构成的磁化自由层7构成的一对铁磁层5,7，该非磁性铁磁层设置在中间层6的上方 层6，并且磁存储装置由该磁阻装置1和在厚度方向上夹着磁阻装置1的位线和字线构成。

公开(公告)号：US06879514B2

公开(公告)日：2005-04-12

申请号：US10673025

申请日：2003-09-26

申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuo Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuo Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L43/08

CPC分类号： G11C11/16

摘要： In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

摘要翻译： 在一个磁阻元件中，至少包括一对铁磁层，它们之间层叠有一个中间层，并通过允许电流沿与层叠层的平面交叉的方向流动来实现磁阻的变化， 构成其中构成信息记录层的至少一个铁磁层具有包含CoFeB或CoFeNiB合金的非晶结构，并且具有在一个方向上具有长轴的平面形式，其中沿着长轴方向的两侧形成直线或 并且其长轴方向的两端形成弯曲或向外弯曲，其中图案形式的纵横比为1：1.2至1：3.5，可以稳定地获得性能一致的优异的小行星曲线 。

公开(公告)号：US20050157545A1

公开(公告)日：2005-07-21

申请号：US11078976

申请日：2005-03-11

申请人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuo Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Kazuhiro Bessho ,  Kazuhiro Ohba ,  Tetsuo Mizuguchi ,  Yutaka Higo ,  Takeyuki Sone ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/14 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L43/08

CPC分类号： G11C11/16

摘要： In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

公开(公告)号：US06815745B2

公开(公告)日：2004-11-09

申请号：US10341857

申请日：2003-01-14

申请人： Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Mizuguchi ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano

发明人： Yutaka Higo ,  Kazuhiro Bessho ,  Tetsuya Mizuguchi ,  Tetsuya Yamamoto ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Hiroshi Kano

IPC分类号： H01L31119

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3254 ,  H01F41/302

摘要： When a tunnel magnetoresistive effect element having a multilayer film structure containing two ferromagnetic material layers (11, 12) and a barrier layer (13) is constructed, after one ferromagnetic material layer (11) had been deposited, a conductive layer (16), formed by adding a material of an element different from a metal material to said metal material serving as a principal component thereof, is deposited on the ferromagnetic material layer (11) and the barrier layer (13) is formed by oxidizing the conductive layer (16), whereafter the other ferromagnetic material layer (12) is deposited on the barrier layer (13). Thus, in the tunnel magnetoresistive effect type memory device, dispersion of resistance value between respective elements can be suppressed while a large TMR ratio can be obtained.

公开(公告)号：US07315053B2

公开(公告)日：2008-01-01

申请号：US10480242

申请日：2003-04-08

申请人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0

摘要翻译： 通过将新材料应用于铁磁层，可以同时改善写入特性和读取特性。 在具有一对铁磁层的磁阻效应元件中，通过中间层彼此相对以使电流在垂直于膜平面的方向上流动以获得磁阻变化，至少一个铁磁层包含铁磁性层 含有Fe，Co和B的材料。铁磁材料应优选含有Fe，Co和B。 （在化学式中，a，b，c和d表示原子％5 <= a <= 45,35 <= b <= 85,0

公开(公告)号：US20080006860A1

公开(公告)日：2008-01-10

申请号：US11853294

申请日：2007-09-11

申请人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0≦c≦35, 10≦d≦30. a+b+C+d=100).

摘要翻译： 通过将新材料应用于铁磁层，可以同时改善写入特性和读取特性。 在具有通过中间层彼此相对的一对铁磁层的磁阻效应元件中，使得电流在垂直于膜平面的方向上流动以获得磁阻变化，至少一个铁磁层包含一个 含Fe，Co和B的铁磁材料。铁磁材料应优选含有Fe，Co和B。铁磁材料应优选含有Fe，Co和B。 （在化学式中，a，b，c和d表示原子％。5 <= a <= 45,35 <= b <= 85,0 <= c <= 35,10 <= d <= 30。 a + b + C + d = 100）。

公开(公告)号：US07034348B2

公开(公告)日：2006-04-25

申请号：US10491324

申请日：2003-08-01

申请人： Kazuhiro Ohba ,  Hiroshi Kano ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi

发明人： Kazuhiro Ohba ,  Hiroshi Kano ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Tetsuya Mizuguchi

IPC分类号： H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3277 ,  H01L43/10

摘要： A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.

摘要翻译： 磁阻效应元件可以被赋予令人满意的磁特性，因为可以抑制退火时的磁阻变化率的劣化，并且磁存储器件包括这种磁阻效应元件以提供优异的写入特性。 磁阻效应元件具有通过中间层6彼此相对的一对铁磁层（磁化固定层5和磁化自由层7），以使电流在垂直于层表面的方向上流动以获得磁阻变化 。 磁存储器件包括磁阻效应元件1，其中该对铁磁层5,7中的至少一个包含结晶温度高于623K的非晶态铁磁材料，并且夹着该磁阻效应元件的位线和字线和 磁阻效应元件在厚度方向上。

公开(公告)号：US07700982B2

公开(公告)日：2010-04-20

申请号：US11853294

申请日：2007-09-11

申请人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

发明人： Masanori Hosomi ,  Tetsuya Mizuguchi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

摘要： Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magneto resistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd (in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0≦c≦35, 10≦d≦30, a+b+C+d=100).

摘要翻译： 通过将新材料应用于铁磁层，可以同时改善写入特性和读取特性。 在具有通过中间层彼此相对的一对铁磁层的磁阻效应元件中，使得电流在垂直于膜平面的方向上流动以获得磁阻变化，至少一个铁磁层包含一个 铁磁性材料应该含有FeaCobNicBd（化学式中a，b，c和d表示原子％5和nlE; a＆nlE; 45,35＆nlE; b＆nlE; 85,0和nlE; c＆nlE; 35 ，10＆nlE; d＆nlE; 30，a + b + C + d = 100）。

公开(公告)号：US20100328992A1

公开(公告)日：2010-12-30

申请号：US12817327

申请日：2010-06-17

申请人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

发明人： Hiroshi Kano ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Masanori Hosomi ,  Shinichiro Kusunoki ,  Yuki Oishi ,  Kazutaka Yamane ,  Kazuhiro Bessho ,  Minoru Ikarashi

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/005 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C17/16 ,  G11C29/50 ,  G11C2029/4402 ,  Y10S977/935

摘要： A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.

摘要翻译： 存储器包括：多个存储器件，每个存储器件包括隧道磁阻效应器件，其包含磁化方向可反转的磁化自由层，包括绝缘材料的隧道势垒层和与之相关的磁化固定层 经由具有固定的磁化方向的隧道势垒层到达磁化自由层; 使用存储装置的磁化自由层的磁化方向记录信息的随机存取存储区域; 以及根据存储器件的隧道势垒层的故障是否记录信息的只读存储区域。