公开(公告)号：US20080142480A1

公开(公告)日：2008-06-19

申请号：US11956708

申请日：2007-12-14

申请人： Koji OTSUKA

发明人： Koji OTSUKA

IPC分类号： C03C15/00

CPC分类号： C03C15/00 ,  C03C19/00

摘要： The present invention is to provide a method by which the waviness generated in a glass substrate surface during pre-polishing are removed and the glass substrate is finished so as to have a highly flat surface. The present invention relates a method of finishing a pre-polished glass substrate surface, the glass substrate being made of quartz glass containing a dopant and comprising SiO2 as a main component, the finishing method comprising: measuring a concentration distribution of the dopant contained in the glass substrate; and measuring a surface shape of the glass substrate in the pre-polished state, wherein conditions for processing the glass substrate surface are set for each part of the glass substrate based on the measurement results of the concentration distribution of the dopant and the surface shape of the glass substrate.

摘要翻译： 本发明提供一种在预抛光期间在玻璃基板表面产生的波纹被去除并且玻璃基板被加工成具有高平坦表面的方法。 本发明涉及一种完成预抛光玻璃基板表面的方法，所述玻璃基板由含有掺杂剂并包含SiO 2作为主要成分的石英玻璃制成，所述精加工方法包括：测量 包含在玻璃基板中的掺杂剂的浓度分布; 并且在预抛光状态下测量玻璃基板的表面形状，其中基于掺杂剂的浓度分布的测量结果和玻璃基板表面的表面形状的玻璃基板表面的每个部分设置条件 玻璃基板。

公开(公告)号：US20110281069A1

公开(公告)日：2011-11-17

申请号：US13177910

申请日：2011-07-07

申请人： Koji OTSUKA ,  Kenji OKAMURA

发明人： Koji OTSUKA ,  Kenji OKAMURA

IPC分类号： B32B33/00 ,  B32B17/00

CPC分类号： G01B9/02065 ,  C03C15/02 ,  C03C19/00 ,  C03C23/006 ,  C03C2204/08 ,  G01B9/02057 ,  G01B9/0209 ,  G01B11/30 ,  G03F1/60 ,  H01J2237/0812 ,  Y10T428/24355

摘要： A glass substrate obtained by a method including measuring flatness of a glass substrate surface and measuring concentration distribution of dopant in the substrate. Processing conditions of the surface are set up for each site of the substrate based on results from the measuring the flatness and the measuring the distribution, and the finishing is carried out while keeping an angle formed by normal line of the substrate and incident beam onto the surface at from 30 to 89°. The surface is subjected to second finishing for improving an RMS in a high spatial frequency region. The surface after the second finishing satisfies the requirements: an RMS slope in the region that 5 μm

摘要翻译： 一种玻璃基板，其通过包括测量玻璃基板表面的平坦度和测量基板中掺杂剂的浓度分布的方法获得。 基于测量平面度和测量分布的结果，为基板的每个部位设置表面的加工条件，并且在将基板和入射光束的法线形成的角度保持在 表面为30〜89°。 对表面进行第二次精加工以改善高空间频率区域中的均方根。 第二次完成后的表面满足以下要求：在5μm（λ）（空间波长）<1mm的区域内的RMS斜率不大于0.5mRad，并且在250nm <λ（空间波长）的区域中的RMS斜率， <5μm不大于0.6mRad。

公开(公告)号：US20090242910A1

公开(公告)日：2009-10-01

申请号：US12412902

申请日：2009-03-27

申请人： Hitoshi MUROFUSHI ,  Koji OTSUKA ,  Nobuhisa SUGIMORI ,  Hideyuki WATANABE

发明人： Hitoshi MUROFUSHI ,  Koji OTSUKA ,  Nobuhisa SUGIMORI ,  Hideyuki WATANABE

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/05 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H05B33/089 ,  H01L2924/00

摘要： A light emitting device includes: a first semiconductor region; a second semiconductor region and third semiconductor region which are provided in the first semiconductor region; a first semiconductor light emitting element of which first electrode is electrically connected to a main surface of the second semiconductor region; a second semiconductor light emitting element of which third electrode is electrically connected to a main surface of the third semiconductor region; and a conductor which electrically connects the second electrode of the first semiconductor light emitting element and the third semiconductor region, and which electrically connects the second electrode and the third electrode through the third semiconductor region. In the light emitting device, the semiconductor light emitting elements are connected in series, and are directly connected to a power source.

摘要翻译： 发光器件包括：第一半导体区域; 设置在所述第一半导体区域中的第二半导体区域和第三半导体区域; 第一半导体发光元件，其第一电极电连接到第二半导体区域的主表面; 第二半导体发光元件，其第三电极与第三半导体区域的主表面电连接; 以及将第一半导体发光元件的第二电极和第三半导体区域电连接并且通过第三半导体区域电连接第二电极和第三电极的导体。 在发光装置中，半导体发光元件串联连接，并直接与电源连接。