摘要:
A switching resistance RAM that is highly integrated as well as reduced in a read-out time is realized. There is formed an NPN type bipolar transistor BT composed of a collector layer made of an N-well 11, a base layer made of a P+ type Si layer 12A formed in a surface of the N-well 11, and an emitter layer made of an N+ type Si layer 15 formed in a surface of the P+ type Si layer 12A. Also, there are formed a word line WL0 electrically connected to the N+ type Si layer 15 and bit lines BL1-BL4 intersecting with the word line WL0. Also, there are formed a plurality of switching layers 14 formed on a surface of the P+ type Si layer 12A, each being electrically connected to corresponding each of the bit lines and switching between an ON state and an OFF state and an electric potential fixing line 19A to fix the P+ type Si layer 12A at a predetermined electric potential.
摘要:
A digital recording and reproducing apparatus comprising a cassette number registering circuit (1) for applying different CIDs for respective cassettes, a corresponding control circuit (7) for searching, adding and deleting program data, a cassette number inserting circuit (2) for inserting a CID in the form of a digital signal into the VBI of an analog video signal, a cassette number extracting circuit (3) for extracting a CID from a VBI, magnetic recording and reproducing means (4) for recording and reproducing the analog signal by using a magnetic tape (50), a display number registering circuit (5) for applying an AID which corresponds to a CID and is recognized by a user, a memory circuit (6) for storing program data including a CID, an AID, a starting tape position, an ending tape position and recording start date, a program integrating circuit (76) which makes one AID corresponds to a plurality of CIDs, and, keeps programs having later date and deletes programs having older date when the recorded magnetic tape positions of the recorded programs under the plurality of CIDs overlap. The above structure enable amendment when a plurality of CIDs are registered for one cassette by mistake. In integration, an AID of smaller number is selected. (FIG. 8)
摘要:
Disclosed is a backlight device for illuminating a transmissive color liquid crystal display panel from its backside with white light. The backlight device includes, as a light source, a plural number of principal light emitting diode units 21mn, and a plural number of subsidiary light emitting diode units 21mn, where m and n are natural numbers. Each principal light emitting diode unit is made up by a plural number of light emitting diodes (21) arrayed in a string and emits white light of preset chromaticity. Each subsidiary light emitting diode unit is made up by a plural number of light emitting diodes (21) arrayed in a string and emits white light of chromaticity in the vicinity of the preset chromaticity. The number of the subsidiary light emitting diode units is smaller than that of the principal light emitting diode units. When the principal light emitting diode units and the subsidiary light emitting diode units are arrayed in a two-dimensional matrix, the subsidiary light emitting diode units 21mn are arrayed without being juxtaposed on the same row, and the subsidiary light emitting diode units 21mn, arrayed in a center column of the two-dimensional matrix, are arrayed towards the center of a color liquid crystal display panel (110).
摘要:
Every time an assignment statement is executed during performing a simulation according to a second variable memory system, it is determined whether a value interpreted to have the same meaning is assigned to the assignment statement in the simulation according to a first variable memory system and in the simulation according to the second variable memory system. When the value interpreted to have the same meaning is not assigned, the value assigned according to the second variable memory system is overwritten by an expected value, and a report indicating that the assignment statement is a part dependent on a variable memory system is output.
摘要:
A program parallelization supporting apparatus determines a determinacy in at least one dependency relationship of a data dependency, a control dependency and a pointer dependency in a program, extracts a critical path in the program, and extracts a processing instruction which exists on the critical path and has a non-deterministic determinacy in the dependency relationship. Furthermore, if a process related to a path of the extracted non-deterministic processing instruction is parallelized and the path of the non-deterministic processing instruction is deleted, the program parallelization supporting apparatus outputs parallelization labor hour information depending on the number of dependency relationships disturbing the parallelization and parallelization effect information depending on the number of processing instructions which are shortened by the parallelization.
摘要:
An apparatus for manufacturing a semiconductor material includes a load-lock chamber which can contain a cassette for holding at least one wafer for taking the wafer into or out of the apparatus, a process furnace for conducting a treatment to the wafer, and a transfer chamber for transferring the wafer between the load-lock chamber and the process furnace, wherein the apparatus further includes a pressure detector for detecting a pressure difference between in the process furnace and in the transfer chamber, and a gas flow controller for controlling a flow rate of a gas flow supplied to the transfer chamber in accordance with results of detection by the pressure detector.
摘要:
There is offered a switching resistance RAM that is very much reduced in an occupied area and is highly integrated. Memory cells CEL11-CEL14 are formed corresponding to four intersections of word lines WL0 and WL1 and bit lines BL0 and BL1. Each of the memory cells CEL11-CEL14 are composed of a switching layer 13 formed on a surface of an N+ type Si layer 11. The switching layer 13 is electrically connected to the bit line BL0 or BL1 thereabove through an electrode 14. The switching layer 13 is composed of a SiC layer 13A stacked on the surface of the N+ type Si layer 11 and a Si oxide layer 13B stacked on the SiC layer 13A. A top surface of the Si oxide layer 13B, that is the uppermost layer of the switching layer 13, is electrically connected to the corresponding bit line BL0 or BL1.
摘要:
A high-reliability electronic component without reduction in insulation resistance under high-temperature and high-humidity conditions has satisfactory solderability of external electrodes. The electronic component includes a main body and external electrodes disposed on surfaces of the main body, the external electrodes include underlying electrode layers each containing a metal, alloy layers each disposed on the corresponding underlying electrode layer, Ni plating layers each disposed on the corresponding alloy layer, Ni oxide layers each disposed on the corresponding Ni plating layers, and upper plating layers each disposed on the corresponding Ni oxide layer, each Ni oxide layer having a thickness of about 150 nm or less, and each Ni plating layer having an average particle size of Ni particles of about 2 μm or more. To form the Ni plating layers having reduced grain boundaries, heat treatment is performed at about 500° C. to about 900° C. inclusive in a reducing atmosphere having an oxygen concentration of about 100 ppm or less.
摘要:
A compiler includes: a syntax analyzer analyzing whether or not an operation described in a source program conforms to grammatical rules, and analyzing whether or not a combination of the operations defines an intrinsic function and details of processing operations of the intrinsic function; an intrinsic function definition database storing a definition of the intrinsic function and the details of the processing operations of the intrinsic function, as analyzed by the syntax analyzer; a code generator generating machine instructions from the source program based on a result of the processing of the syntax analyzer; and a code optimizer optimizing the machine instructions to machine instructions corresponding to the details of the processing operations of the intrinsic function, if a string of the machine instructions generated by the code generator are in agreement with the details of the processing operations of the intrinsic function stored in the intrinsic function definition database.
摘要:
A color filter (19) used in a transmissive color liquid crystal display panel of a color liquid crystal display (LCD) apparatus. This color filter (19) is constituted by a tristimulus color filter for wavelength-selecting and transmitting red light, green light and blue light. Mixing of blue color and red color is prohibited by not having the transmission wavelength band of the red filter CFR overlaid substantially on the transmission wavelength band of the blue filter CFB.