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公开(公告)号：US06245673B1
公开(公告)日：2001-06-12
申请号：US09385848
申请日：1999-08-30
IPC分类号： H01L213205
CPC分类号： C23C16/42 , H01L21/28518
摘要： A first tungsten silicide layer relatively rich in silicon is formed on an object by using a process gas having a phosphorus atom-containing gas added thereto, and a second tungsten silicide layer relatively rich in tungsten is formed on the first tungsten silicide layer, so that a tungsten silicide film is formed. The addition amount of the phosphorus atom-containing gas to the process gas is 0.02 to 0.2% by volume “in terms of a phosphine gas”.
摘要翻译： 通过使用添加了含有磷原子的气体的处理气体，在物体上形成比较富硅的第一硅化钨层，在第一硅化钨层上形成比较富含钨的第二硅化钨层， 形成硅化钨膜。 含磷原子的气体相对于处理气体的添加量为“以磷化氢气体计算”为0.02体积％〜0.2体积％。
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公开(公告)号：US08122850B2
公开(公告)日：2012-02-28
申请号：US12496349
申请日：2009-07-01
申请人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
发明人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02318 , H01L21/02337 , H01L21/76837 , H01L29/78
摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。
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公开(公告)号：US07563481B2
公开(公告)日：2009-07-21
申请号：US10956125
申请日：2004-10-04
申请人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
发明人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02318 , H01L21/02337 , H01L21/76837 , H01L29/78
摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。
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公开(公告)号：US20070231484A1
公开(公告)日：2007-10-04
申请号：US10956125
申请日：2004-10-04
申请人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
发明人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02318 , H01L21/02337 , H01L21/76837 , H01L29/78
摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。
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公开(公告)号：US07064084B2
公开(公告)日：2006-06-20
申请号：US10468914
申请日：2002-02-28
申请人： Shingo Hishiya , Koji Akiyama , Yoshikazu Furusawa , Kimiya Aoki
发明人： Shingo Hishiya , Koji Akiyama , Yoshikazu Furusawa , Kimiya Aoki
IPC分类号： H01L21/324
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/31658 , H01L21/31662 , Y10S438/909
摘要： To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed. The pretreatment process is preferably performed at a temperature lower than the temperature for the oxide-film-formation process and also preferably performed under depressurized conditions, the level of the depressurization being higher than the level for the oxide-film-formation process. A high-quality gate-insulating film for a transistor chip can be formed according to this method for the formation of oxide films.
摘要翻译： 为了提供形成氧化物膜的方法，优选形成在整个晶片上具有优异的膜厚度和膜质量均匀性的高质量氧化物膜。 形成氧化膜的方法包括：通过在减压条件下用自由基氧化物质或含有自由基氧化物质的气氛进行氧化处理，在位于反应容器中的晶片表面上形成保护性氧化膜的预处理工艺; 以及通过在减压条件下在规定温度下进行氧化处理，在晶片上形成氧化膜的氧化膜形成工序。 氧化膜形成方法优选在进行预处理工序的反应容器中以连续的方式进行预处理。 预处理过程优选在低于氧化膜形成工艺的温度的温度下进行，并且还优选在减压条件下进行，减压水平高于氧化膜形成工艺的水平。 根据用于形成氧化膜的方法，可以形成用于晶体管芯片的高质量栅极绝缘膜。
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