公开(公告)号：US07563481B2

公开(公告)日：2009-07-21

申请号：US10956125

申请日：2004-10-04

申请人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

发明人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

IPC分类号： C23C16/00 ,  B05D1/40 ,  B05D3/04 ,  B05D3/10 ,  B05D3/02

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/76837 ,  H01L29/78

摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.

摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。

公开(公告)号：US20070231484A1

公开(公告)日：2007-10-04

申请号：US10956125

申请日：2004-10-04

申请人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

发明人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

IPC分类号： C23C16/00 ,  B05C11/00

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/76837 ,  H01L29/78

摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.

摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。

公开(公告)号：US08122850B2

公开(公告)日：2012-02-28

申请号：US12496349

申请日：2009-07-01

申请人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

发明人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

IPC分类号： C23C16/00 ,  C23C16/52 ,  B05D3/02 ,  B05D3/04 ,  B05D3/10

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/76837 ,  H01L29/78

摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.

摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。

公开(公告)号：US20090263292A1

公开(公告)日：2009-10-22

申请号：US12496349

申请日：2009-07-01

申请人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

发明人： Shingo Hishiya ,  Kimiya Aoki ,  Masahisa Watanabe

IPC分类号： B01J19/00

CPC分类号： H01L21/3125 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/76837 ,  H01L29/78

摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.

摘要翻译： 一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。 第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是 通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。

公开(公告)号：US09152431B2

公开(公告)日：2015-10-06

申请号：US14119770

申请日：2011-09-22

申请人： Masahisa Watanabe

发明人： Masahisa Watanabe

IPC分类号： G06F12/00 ,  G06F9/44 ,  G06F11/14 ,  G06F3/06

CPC分类号： G06F9/4406 ,  G06F3/0619 ,  G06F3/065 ,  G06F3/0674 ,  G06F11/1417 ,  G06F11/1435 ,  G06F11/1441

摘要： When a shutdown is detected, a master boot record (MBR) or a backup MBR are read. When the data of the MBR is not identical to the data of the backup MBR, the MBR is copied to the backup MBR. When the backup MBR cannot normally be read or is improper, the MBR is copied to the backup MBR. When the backup MBR cannot normally be read or is improper while the power of the computer is turned on, the MBR is copied to the backup MBR.

摘要翻译： 检测到关机时，会读取主引导记录（MBR）或备份MBR。 当MBR的数据与备份MBR的数据不同时，将MBR复制到备份MBR。 当备份MBR无法正常读取或不正确时，MBR将复制到备份MBR。 当计算机的电源打开时，备份MBR不能正常读取或不正确，则将MBR复制到备份MBR。

公开(公告)号：US07891784B2

公开(公告)日：2011-02-22

申请号：US12019505

申请日：2008-01-24

申请人： Noriyasu Ozaki ,  Junichi Kobayashi ,  Shuji Koyama ,  Tadanobu Nagami ,  Yoshinori Tagawa ,  Kenji Fujii ,  Hiroyuki Murayama ,  Masaki Ohsumi ,  Jun Yamamuro ,  Yoshinobu Urayama ,  Hiroyuki Abo ,  Takeshi Terada ,  Masahisa Watanabe ,  Taichi Yonemoto

发明人： Noriyasu Ozaki ,  Junichi Kobayashi ,  Shuji Koyama ,  Tadanobu Nagami ,  Yoshinori Tagawa ,  Kenji Fujii ,  Hiroyuki Murayama ,  Masaki Ohsumi ,  Jun Yamamuro ,  Yoshinobu Urayama ,  Hiroyuki Abo ,  Takeshi Terada ,  Masahisa Watanabe ,  Taichi Yonemoto

IPC分类号： B41J2/045

CPC分类号： B41J2/14129 ,  B41J2202/11 ,  Y10T29/49401

摘要： A liquid ejection head and a method of forming the same. The liquid ejection head includes a substrate, an ejection port, a liquid channel, and a supply port. The substrate has, above one side thereof, an energy generating element configured to generate energy used to eject liquid. The ejection port, from which a liquid is ejected, is located at a position corresponding to the energy generating element. The liquid channel communicates with the ejection port and penetrates the substrate from the one side to another side of the substrate. The supply port communicates with the liquid channel. The substrate has a projecting layer extending inward of an inner peripheral portion of an opening in the supply port in the one side, and the projecting layer and the energy generating element are formed of the same material.

摘要翻译： 液体喷射头及其形成方法。 液体喷射头包括基板，喷射口，液体通道和供给口。 衬底在其一侧上具有被配置为产生用于喷射液体的能量的能量产生元件。 排出液体的喷射口位于与能量产生元件相对应的位置。 液体通道与喷射口连通并从衬底的一侧到另一侧穿透衬底。 供应口与液体通道连通。 基板具有从一侧的供给口的开口的内周部向内延伸的突出层，突出层和能量产生元件由相同的材料形成。

公开(公告)号：US20100212159A1

公开(公告)日：2010-08-26

申请号：US12699995

申请日：2010-02-04

申请人： Tsuyoshi Takahashi ,  Shuji Koyama ,  Masaki Ohsumi ,  Masahisa Watanabe

发明人： Tsuyoshi Takahashi ,  Shuji Koyama ,  Masaki Ohsumi ,  Masahisa Watanabe

IPC分类号： B21D53/76

CPC分类号： B41J2/1635 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  Y10T29/49083 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49165 ,  Y10T29/49401

摘要： An object of the invention is to provide a method of manufacturing a liquid discharge head in which a distance from a discharge opening and an energy generating element is uniform, simply and with good precision.

摘要翻译： 本发明的目的在于提供一种液体排出头的制造方法，其中，排出口和能量产生元件的距离简单且精度良好。

公开(公告)号：US20100135877A1

公开(公告)日：2010-06-03

申请号：US12706734

申请日：2010-02-17

申请人： Masahisa Watanabe ,  Katsutoshi Ishii ,  Tetsuya Shibata

发明人： Masahisa Watanabe ,  Katsutoshi Ishii ,  Tetsuya Shibata

IPC分类号： C01F7/00

CPC分类号： C23C16/4405 ,  Y02C20/30 ,  Y02P70/605

摘要： A method for using a heat processing apparatus of a batch type includes performing a preparatory process for removing aluminum present as a metal impurity from a quartz inner surface of a process container, and performing a main heat process on product substrates held on a holder member in the process container after the preparatory process. The preparatory process includes placing a plurality of dummy substrates for allowing the metal impurity to be deposited thereon inside a process container with no product substrates placed therein; then, supplying a chlorine-containing gas and water vapor into the process container and heating the quartz inner surface of the process container at a process temperature, thereby applying a baking process onto the quartz inner surface to discharge the metal impurity from the quartz inner surface and deposit the metal impurity onto the dummy substrates; and then, unloading the dummy substrates with the metal impurity deposited thereon from the reaction container.

摘要翻译： 使用分批式热处理装置的方法包括进行从处理容器的石英内表面除去作为金属杂质存在的铝的准备工序，对保持在保持部件上的产品基板进行主热处理 过程容器经过准备过程。 该准备过程包括：放置多个虚设基板，用于使金属杂质沉积在其中没有产品基板的处理容器内; 然后，将含氯气体和水蒸气供给到处理容器中，并在处理温度下加热处理容器的石英内表面，从而对石英内表面进行烘烤处理，以从石英内表面排出金属杂质 并将金属杂质沉积到虚设基板上; 然后从沉积在其上的金属杂质从反应容器卸载虚设基板。

公开(公告)号：US08722510B2

公开(公告)日：2014-05-13

申请号：US13194426

申请日：2011-07-29

申请人： Masahisa Watanabe ,  Kazuhide Hasebe

发明人： Masahisa Watanabe ,  Kazuhide Hasebe

IPC分类号： H01L21/76

CPC分类号： H01L21/67167 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02304 ,  H01L21/02323 ,  H01L21/32055 ,  H01L21/32105 ,  H01L21/67207 ,  H01L21/76227

摘要： A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.

摘要翻译： 填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层 对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽 在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧， 种子层成为氧化硅。

公开(公告)号：US08685832B2

公开(公告)日：2014-04-01

申请号：US13594217

申请日：2012-08-24

申请人： Masahisa Watanabe

发明人： Masahisa Watanabe

IPC分类号： H01L21/76

CPC分类号： H01L21/76229

摘要： Provided is a trench filling method, which includes: forming a silicon oxide liner on a semiconductor substrate with trenches formed therein, the trenches including narrow-width portions having a first minimum isolation width and wide-width portions having a second minimum isolation width being wider than the first minimum isolation width; forming an oxidation-barrier film on the silicon oxide liner; forming a silicon liner on the oxidation-barrier film; filling the narrow-width portions with a first filling material; filling the wide-width portions with a second filling material; and oxidizing the silicon liner.

摘要翻译： 提供了一种沟槽填充方法，其包括：在其上形成有沟槽的半导体衬底上形成氧化硅衬垫，所述沟槽包括具有第一最小隔离宽度的窄宽度部分和具有第二最小隔离宽度的宽度部分 比第一个最小隔离宽度; 在氧化硅衬垫上形成氧化阻挡膜; 在氧化阻挡膜上形成硅衬垫; 用第一填充材料填充窄宽度部分; 用第二填充材料填充宽幅部分; 并氧化硅衬套。