-
公开(公告)号：US07183715B2
公开(公告)日：2007-02-27
申请号：US10997888
申请日：2004-11-29
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J7/24
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.
摘要翻译： 一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。 该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。
-
公开(公告)号：US20050284574A1
公开(公告)日：2005-12-29
申请号：US11217287
申请日：2005-09-02
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： A plasma processing apparatus includes a vacuum processing vessel constituting a vacuum processing chamber, a processing gas supply unit supplying a processing gas to the vacuum vessel, a plasma generator generating plasma by supplying electromagnetic energy to the vacuum vessel and dissociating the processing gas supplied thereto so as to process a wafer, and a processing chamber surface temperature control unit for controlling the inner surface temperature of the vacuum processing chamber. The control unit controls the inner surface temperature of the vacuum processing chamber based on more than one of (a) an idle time from the termination of an immediately previous lot processing, (b) a processing power of the immediately previous lot processing, (c) a process pressure of the immediately previous lot processing, and (d) a number of wafers being processed of the immediately previous lot processing prior to performing the present wafer processing.
摘要翻译： 等离子体处理装置包括构成真空处理室的真空处理容器，向真空容器供给处理气体的处理气体供给单元，通过向真空容器供给电磁能并将供给的处理气体解离的等离子体发生器来产生等离子体 以及用于控制真空处理室的内表面温度的处理室表面温度控制单元。 控制单元基于以下（a）从紧接着的批次处理结束起的空闲时间，（b）紧接着的批次处理的处理能力（c），控制真空处理室的内表面温度 ）紧接在前的批次处理的处理压力，以及（d）在执行本晶片处理之前，正在处理之前的批次处理的多个晶片。
-
公开(公告)号：US20050254143A1
公开(公告)日：2005-11-17
申请号：US11121014
申请日：2005-05-04
摘要： An AF control apparatus for a zoom lens system includes a movable lens group serving as a zooming lens group and a focusing lens group in the zoom lens system; a focusing table which stores focusing data for the movable lens group; a zooming table which stores zooming data for the movable lens group, the zooming table having different data from the focusing table; and a driving device for moving the movable lens group in an optical axis direction of the zoom lens system according to data stored in the focusing table and the zooming table.
摘要翻译： 用于变焦透镜系统的AF控制装置包括在变焦透镜系统中用作变焦透镜组和聚焦透镜组的可移动透镜组; 存储可移动透镜组的聚焦数据的聚焦表; 存储用于可移动透镜组的缩放数据的变焦表，该缩放表具有与聚焦表不同的数据; 以及驱动装置，用于根据存储在聚焦表和变焦表中的数据，使可变透镜组沿变焦透镜系统的光轴方向移动。
-
公开(公告)号：US06939435B1
公开(公告)日：2005-09-06
申请号：US10875213
申请日：2004-06-25
IPC分类号： H01L21/3065 , C23F1/00 , H01L21/00 , H01L21/26 , H01L21/306
CPC分类号： H01L21/67103 , H01J37/32522 , H01L21/67248
摘要： The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.
摘要翻译： 本发明提供一种能够保持恒定的处理轮廓的等离子体处理装置和处理方法。 用于向放置在处理室中的晶片提供等离子体处理的等离子体处理装置包括构成处理室1的处理容器1 a，用于向处理室1供应处理气体的处理气体供应装置3,4以及等离子体产生 用于通过向处理室供应电磁能并解离供给到处理室的处理气体来产生等离子体的装置2，其中该装置还包括处理室表面温度控制单元15，用于控制处理室的内表面温度，控制 通过在终止清洁处理之后和在执行晶片处理之前基于处理历史在腔室中产生等离子体预定处理时间来加热处理室的内表面来控制温度的单元。
-
公开(公告)号：US06939433B2
公开(公告)日：2005-09-06
申请号：US10228039
申请日：2002-08-27
申请人： Shoji Ikuhara , Hideyuki Yamamoto
发明人： Shoji Ikuhara , Hideyuki Yamamoto
CPC分类号： H01L22/20 , H01J37/32935
摘要： It is an object of the invention to provide a vacuum processing device and a vacuum processing system capable of improving the accuracy for the function of estimating the result of processing of samples based on the monitored values for the processing state of the samples, improving the forecasting accuracy and thus improving the yield of products. The system comprises a function of monitoring processing parameters for samples, a function of estimating the processing characteristics of the samples based on the monitored parameters, a function of conducting communication with a measuring device for measuring the processing state of the samples after processing and a function of updating the measuring conditions by the measuring device in accordance with the processing characteristics of the samples estimated from the information by monitoring.
摘要翻译： 本发明的目的是提供一种真空处理装置和真空处理系统，其能够基于样本的处理状态的监视值来提高估计样品处理结果的功能的准确度，从而改善预测 准确性，从而提高产品的产量。 该系统包括监视样本的处理参数的功能，基于所监视的参数来估计样本的处理特性的功能，与测量装置进行通信的功能，用于测量处理后的样本的处理状态和功能 根据通过监视从信息估计的样本的处理特性，由测量装置更新测量条件。
-
16.发明授权Plasma processing method and apparatus using dynamic sensing of a plasma environment 失效使用动态感应等离子体环境的等离子体处理方法和装置公开(公告)号：US06911157B2
公开(公告)日：2005-06-28
申请号：US10347402
申请日：2003-01-21
IPC分类号： H05H1/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/66 , H05H1/46 , H01L21/00
CPC分类号： H01J37/32935 , H01J37/3299
摘要： At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.
摘要翻译： 与整个等离子体处理时间相比，至少一个控制参数（例如提供给等离子体的功率，过程压力，气体流速和射频偏置功率）与整个等离子体处理时间相比改变极短的时间， 改变不影响晶片上的等离子体处理的结果，以监视在改变时发生的等离子体状态的时间变化。 由监视方法产生的信号用于控制或诊断等离子体处理，从而可以实现微型蚀刻工作，高质量沉积，表面处理。
-
17.发明授权公开(公告)号：US06755932B2
公开(公告)日：2004-06-29
申请号：US09788463
申请日：2001-02-21
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H05H100
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： The object of the present invention is to provide a plasma processing apparatus wherein plasma is generated in process chamber to treat a sample. Said plasma processing apparatus is further characterized in that multiple closely packed through-holes are formed on the plate installed on the UHF antenna arranged opposite to the sample, an optical transmitter is installed almost in contact with the back of the through-holes, and an optical transmission means is arranged on the other end of said optical transmitter, thereby measuring optical information coming from the sample and plasma through optical transmitter and optical transmission means by means of a measuring instrument. No abnormal discharge or particle contamination occur to through-holes even in long-term discharge process, and no deterioration occurs to the optical performance at the end face of the optical transmitter. Said plasma processing apparatus ensures stable and high precision measurement of the state of the surface of sample and plasma for a long time.
摘要翻译： 本发明的目的是提供一种等离子体处理装置，其中在处理室中产生等离子体以处理样品。 所述等离子体处理装置的特征还在于，在安装在与样品相对布置的UHF天线上的板上形成多个紧密堆积的通孔，光发射器几乎与通孔背面几乎接触，并且 光传输装置设置在所述光发射机的另一端，借助于测量仪器通过光发射机和光传输装置测量来自样本和等离子体的光信息。 即使在长期放电过程中也不会对通孔发生异常放电或颗粒污染，并且在光发射机的端面处的光学性能不会劣化。 所述等离子体处理装置长时间保证对样品和等离子体表面的状态的稳定和高精度的测量。
-
公开(公告)号：US06653594B2
公开(公告)日：2003-11-25
申请号：US09793991
申请日：2001-02-28
IPC分类号： B23K9173
CPC分类号： B23K9/295
摘要： A gas having an arc current-voltage property that is different from a shielding gas is intermittently added to the shielding gas, an arc current is intermittently changed in proportion to an intermittent chemical composition change of the shielding gas at an arc generation region, and an arc generation point situated at a tip of a welding wire is displaced upwardly or downwardly along a groove of a base metal.
摘要翻译： 与保护气体不同的具有电弧电流特性的气体被间歇地添加到保护气体中，电弧电流与电弧产生区域的保护气体的间歇化学组成变化成比例地间歇地变化， 位于焊丝前端的电弧产生点沿着母材的沟槽向上或向下移位。
-
公开(公告)号：US06558100B1
公开(公告)日：2003-05-06
申请号：US09697324
申请日：2000-10-27
IPC分类号： H01L213065
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67196 , H01L21/67201 , H01L21/67207 , Y10S414/135 , Y10S414/139
摘要： The vacuum processing apparatus has an atmospheric loader having a plurality of cassette tables and a transport unit for carrying wafers, a vacuum loader equipped with vacuum wafer-processing chambers and a vacuum transport chamber communicating with the processing chambers via gate valves, and a locking unit provided with a loading lock chamber and unloading lock chambers that have gate valves for connecting the atmospheric transport unit and vacuum transport chamber; wherein two etching chambers, formed by UHF-ECR reactors, are arranged symmetrically with respect to an axial line passing through the middle of the vacuum transport chamber and locking unit, only at the opposite side of the locking unit across the vacuum transport chamber, and at an acute angle with respect to the vacuum transport chamber, and UHF-ECR antennas, almost parallel to the foregoing axial line, are opened at the opposite side to that of the vacuum transport chamber.
-
公开(公告)号：USD394404S
公开(公告)日：1998-05-19
申请号：US73111
申请日：1997-06-30
申请人： Shingo Ishizaka , Hideyuki Yamamoto
设计人： Shingo Ishizaka , Hideyuki Yamamoto
-
-
-
-
-
-
-
-
-
搜索结果
132 条记录 (耗时 0.032 秒)
