公开(公告)号：US5980630A

公开(公告)日：1999-11-09

申请号：US81665

申请日：1998-05-20

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04 ,  C30B35/00

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068

摘要： In a single crystal manufacturing method by a horizontal magnetic field applied CZ method wherein coils are disposed interposing a crucible coaxially with each other, the coils constituting superconductive electromagnets of a magnetic field application apparatus and the silicon crystal is pulled from melt in the crucible while applying a horizontal magnetic field to the melt; an elavation apparatus capable of finely adjusting relative positions of the superconductive electromagnets and the crcucible in a vertical direction is disposed. The descent of a central portion Cm in a depth direction of the melt is canceled by elevating the crucible with the elevating apparatus, the descent being accompanied with proceeding of process of pulling the single crystal, thereby a coil central axis Cc of the superconductive electromagnets always passes through the central portion Cm or below this portion. Compared with the conventional HMCZ method, an uniformity of an intensity distribution of the magnetic field applied to the melt is increased so that a suppression effect on the melt convection all over the crucible is enhanced.

摘要翻译： 在通过水平磁场施加的CZ方法的单晶制造方法中，其中线圈彼此同轴地布置坩埚，构成磁场施加装置的超导电磁体的线圈和硅晶体在施加时从坩埚中的熔体拉出 熔体的水平磁场; 设置能够精细地调整超导电磁体和坩埚在垂直方向上的相对位置的冲压装置。 通过用升降装置升高坩埚来消除熔体深度方向上的中心部分Cm的下降，伴随着牵引单晶的过程的下降，超导电磁体的线圈中心轴Cc总是 通过中心部分Cm或者低于该部分。 与传统的HMCZ方法相比，施加到熔体的磁场的强度分布的均匀性增加，从而增强了对整个坩埚的熔体对流的抑制效果。

公开(公告)号：US6159283A

公开(公告)日：2000-12-12

申请号：US267214

申请日：1999-03-12

申请人： Isamu Harada ,  Michiaki Oda ,  Masaru Toyoshima ,  Toshinari Murai ,  Eiichi Iino

发明人： Isamu Harada ,  Michiaki Oda ,  Masaru Toyoshima ,  Toshinari Murai ,  Eiichi Iino

IPC分类号： G01N3/02 ,  G01N3/08 ,  C30B15/24

CPC分类号： G01N3/08 ,  G01N2203/0286 ,  Y10S117/911 ,  Y10T117/1068

摘要： Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.

摘要翻译： 用于测量用于通过切克劳斯基法生长硅晶体的硅晶种的颈部的机械强度的装置包括用于保持测试样品的晶种和从上钩挂起的线的末端的种子卡盘。 从下方将测试样品的另一端部分保持的结晶保持器用另一根线连接到下钩以支撑保持器。 该装置包括用于以给定速率拉动钩的装置，以及用于连续测量拉伸载荷的测量装置。 这样的装置和方法能够以良好的精度和再现性精确地测量硅晶种的颈部的机械强度。 在提供良好的生产率和安全性平衡的条件下生长单晶锭。

公开(公告)号：US6027562A

公开(公告)日：2000-02-22

申请号：US173931

申请日：1998-10-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

公开(公告)号：US5911821A

公开(公告)日：1999-06-15

申请号：US923963

申请日：1997-09-05

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  C30B15/04

CPC分类号： C30B15/32 ,  C30B15/30 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W

摘要翻译： 公开了一种切克劳斯基方法，其中在旋转的同时拉动与材料熔体接触的晶种，以便生长单晶，并且在牵引操作期间机械地保持部分正在生长的晶体。 机械地保持晶体，使得晶体的重量W（kg）满足下式（1）：W <12.5×pi D2 / 4（1）其中D表示颈部的最小直径（mm） 。 这使得可以安全可靠地拉出重的单晶。

公开(公告)号：US06670036B2

公开(公告)日：2003-12-30

申请号：US09287199

申请日：1999-04-06

申请人： Eiichi Iino ,  Masanori Kimura

发明人： Eiichi Iino ,  Masanori Kimura

IPC分类号： B32B516

CPC分类号： C30B29/06 ,  C30B15/36 ,  Y10S117/902 ,  Y10S117/911 ,  Y10S117/916 ,  Y10T428/2982

摘要： There are disclosed a silicon seed crystal which is composed of silicon single crystal and used for the Czochralski method, wherein oxygen concentration in the seed crystal is 15 ppma (JEIDA) or less, a silicon seed crystal which is used for the Czochralski method, wherein the silicon seed crystal does not have a straight body, and a method for producing a silicon single crystal by the Czochralski method comprising using said seed crystal, bringing a tip end of the seed crystal into contact with a silicon melt to melt the tip end of the seed crystal, with or without performing necking operation, and growing a silicon single crystal. The method is capable of improving the rate of success in making crystals dislocation-free and the productivity of single crystal rods regardless of the use of necking operation.

摘要翻译： 公开了由硅单晶构成并用于切克劳斯基法的硅晶种，其中晶种中的氧浓度为15ppma（JEIDA）以下，用于切克劳斯基法的硅晶种，其中 硅晶种不具有直体，并且通过切克劳斯基法生产硅单晶的方法包括使用所述晶种，使晶种的尖端与硅熔体接触以熔化晶体的末端 具有或不进行颈缩操作的晶种，并且生长硅单晶。该方法能够提高使晶体无位错的成功率和单晶棒的生产率，而不管使用颈缩操作。

公开(公告)号：US06174363B1

公开(公告)日：2001-01-16

申请号：US09281704

申请日：1999-03-30

申请人： Eiichi Iino

发明人： Eiichi Iino

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/36

摘要： In a method for producing a silicon single crystal, a silicon seed crystal having a sharp tip end is prepared, and a part of the silicon seed crystal is melted down from a tip end to a position having a predetermined thickness. This is followed by performing a necking operation to form a tapered necking part and a neck portion, and by subsequently pulling a single crystal ingot after increasing a diameter. The part to be melted down is a part from a tip end to a position in which a thickness is 1.1 to 2 times the diameter of the neck portion to be formed. The necking operation is then performed in such a way that a tapered necking part in the shape of a cone is formed at an early stage thereof by pulling a crystal with gradually decreasing a diameter to a minimum diameter of 5 mm or more, then forming a neck portion. Subsequently, the single crystal ingot is pulled after being increased in diameter. Methods according to the invention enable growing of a single crystal ingot without lowering the rate of success in making the crystal dislocation-free in cases where a thick neck is formed. This improves productivity of heavy silicon single crystals having a large diameter.

摘要翻译： 在制造硅单晶的方法中，制备具有尖端尖端的硅晶种，并且将硅晶种的一部分从尖端熔化到具有预定厚度的位置。 然后进行缩颈操作以形成锥形颈缩部和颈部，并且随后在增加直径之后拉动单晶锭。 待熔化的部分是从尖端到厚度为要形成的颈部的直径的1.1至2倍的位置的部分。 然后进行颈缩操作，使得通过将直径逐渐减小至最小直径为5mm以上的晶体，在其早期阶段形成锥体形状的锥形颈缩部，然后形成 颈部。 随后，直径增加后拉长单晶锭。 根据本发明的方法使得能够生长单晶锭而不降低在形成较厚的颈部的情况下使晶体无位错的成功率。 这提高了具有大直径的重硅单晶的生产率。

公开(公告)号：US6120598A

公开(公告)日：2000-09-19

申请号：US459849

申请日：1999-12-13

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  C30B15/08

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

摘要翻译： 根据切克劳斯斯基方法生长单晶，使得通过1150-1080℃的温度区的时间为20分钟或更短，或者使得单晶的一部分的长度对应于温度 1150-1080℃的区域的温度分布为2.0cm以下。 或者，单晶生长使得通过1250-1200℃的温度区的时间为20分钟或更短，或者使得对应于1250℃的温度区的单晶的一部分的长度， 1200℃，温度分布为2.0cm以下。 该方法既降低FPD（100个缺陷/ cm 2以下），LSTD，COP（10个缺陷/ cm 2以下）等所谓的内置缺陷的密度和尺寸，能够有效地制造具有 在氧化物绝缘击穿电压特性方面，极好的芯片产量（80％以上）优异。

公开(公告)号：US6056818A

公开(公告)日：2000-05-02

申请号：US96093

申请日：1998-06-11

申请人： Eiichi Iino

发明人： Eiichi Iino

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B15/32 ,  C30B15/36 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/30 ,  C30B15/32 ,  C30B15/36 ,  Y10S117/911 ,  Y10T117/1032

摘要： There is disclosed a method of manufacturing a silicon monocrystal in accordance with the Czochralski method in which a seed crystal is brought into contact with silicon melt and is then slowly pulled while being rotated in order to grow a silicon monocrystalline ingot below the seed crystal. In the method, there is used a seed crystal whose a tip end to be brought into contact with the silicon melt has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the thickness of the tip portion increases to a desired value. Subsequently, the seed crystal is pulled slowly in order to grow a silicon monocrystalline ingot having a desired diameter without performance of a necking operation. During the growth of the silicon monocrystalline ingot, a part of the crystal is mechanically held. The method completely prevents falling of a monocrystalline ingot being grown which would otherwise occur due to the increased diameter and weight of the ingot.

摘要翻译： 公开了根据切克拉斯基方法制造硅单晶的方法，其中晶种与硅熔体接触，然后在旋转的同时缓慢拉动，以便在籽晶下生长硅单晶锭。 在该方法中，使用与硅熔体接触的前端具有尖锐形状或截短的晶种。 晶种的尖端轻轻地与硅熔体接触，然后以低速降低晶种，以便熔化晶种的尖端部分，直到尖端部分的厚度增加到 所需值。 随后，慢慢地拉晶晶，以生长具有所需直径的硅单晶锭，而不进行颈缩操作。 在硅单晶锭的生长期间，一部分晶体被机械地保持。 该方法完全可以防止由于锭的直径和重量的增加而产生的单晶锭的下落。

公开(公告)号：US6048395A

公开(公告)日：2000-04-11

申请号：US197130

申请日：1998-11-20

申请人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Satoshi Suzuki ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C30B15/20

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203

摘要： A method for producing a silicon single crystal in accordance with the Czochralski method. The single crystal is grown in an N.sub.2 (V) region where a large amount of precipitated oxygen and which is located within an N region located outside an OSF ring region, or is grown in a region including the OSF ring region, N.sub.1 (V) and N.sub.2 (V) regions located inside and outside the OSF ring region, in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represents a value of F/G (mm.sup.2 /.degree.C..multidot.min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, and gettering capability stemming from oxygen precipitation is provided over the entire wafer surface, and silicon single crystal wafers wherein OSF nuclei exit but no OSF ring appears when the wafer is subjected to thermal oxidation treatment, neither FPDs nor L/D defects exist on the wafer surface, and gettering capability is provided over the entire wafer surface.

摘要翻译： 根据Czochralski法生产硅单晶的方法。 单晶生长在大量析出氧并且位于OSF环外部的N区内的N2（V）区域中，或者在包括OSF环区域N1（V）的区域中生长， 和位于OSF环区域内外的N 2（V）区域的缺陷分布图，其表示水平轴表示与晶体中心的径向距离D（mm）的缺陷分布，纵轴表示 F / G值（mm2 /℃×min），其中F是单晶的拉伸速率（mm / min），G是沿着拉伸的平均晶体内梯度（DEG C./mm） 在硅熔点的温度范围内的方向为1400℃。该方法允许生产晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，并且提供由氧沉淀引起的吸杂能力 整个晶圆表面，硅单面 当晶片进行热氧化处理时，在晶片表面上不存在FPD和L / D缺陷，并且在整个晶片表面上提供吸杂能力，其中OSF核离开而没有出现OSF环的晶体晶片。

公开(公告)号：US5843229A

公开(公告)日：1998-12-01

申请号：US763889

申请日：1996-12-11

申请人： Masanori Kimura ,  Eiichi Iino ,  Hirotoshi Yamagishi ,  Kiyotaka Takano

发明人： Masanori Kimura ,  Eiichi Iino ,  Hirotoshi Yamagishi ,  Kiyotaka Takano

IPC分类号： C30B15/32 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10T117/1032 ,  Y10T117/1072

摘要： In a crystal holding apparatus, a stepped engagement portion of a single crystal formed below a seed crystal is held by holding portions of a pair of lifting jigs so as to be pulled up. A lock mechanism consisting of a hook lever and an engagement pin is provided in order to prevent the closed lifting jigs from opening. Further, a portion of each holding portion to be contacted with a crystal is provided with a swing claw which is swingable about a horizontal pin. Accordingly, it becomes possible to reliably hold the crystal, to prevent generation of a defect in the crystal structure, and to prevent a material melt from being contaminated.

摘要翻译： 在晶体保持装置中，通过保持一对提升夹具的一部分来保持形成在晶种下方的单晶的阶梯状接合部分，以便被拉起。 提供由钩杆和接合销构成的锁定机构，以防止闭合的起重工具打开。 此外，与晶体接触的每个保持部分的一部分设置有可围绕水平销摆动的摆动爪。 因此，可以可靠地保持晶体，以防止晶体结构中的缺陷的产生，并且防止材料熔体被污染。