公开(公告)号：US6027562A

公开(公告)日：2000-02-22

申请号：US173931

申请日：1998-10-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/206

摘要： A single crystal is grown in accordance with a Czochralski method such that the time for passing through a temperature zone of 1150-1080.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1150-1080.degree. C. in the temperature distribution is 2.0 cm or less. Alternatively, the single crystal is grown such that the time for passing through a temperature zone of 1250-1200.degree. C. is 20 minutes or less, or such that the length of a portion of the single crystal corresponding to the temperature zone of 1250-1200.degree. C. in the temperature distribution is 2.0 cm or less. This method decreases both the density and size of so-called grown-in defects such as FPD (100 defects/cm.sup.2 or less), LSTD, and COP (10 defects/cm.sup.2 or less) to thereby enable efficient production of a single crystal having an excellent good chip yield (80% or greater) in terms of oxide dielectric breakdown voltage characteristics.

公开(公告)号：US5911821A

公开(公告)日：1999-06-15

申请号：US923963

申请日：1997-09-05

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  C30B15/04

CPC分类号： C30B15/32 ,  C30B15/30 ,  Y10S117/911 ,  Y10T117/1032 ,  Y10T117/1072

摘要： There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W

摘要翻译： 公开了一种切克劳斯基方法，其中在旋转的同时拉动与材料熔体接触的晶种，以便生长单晶，并且在牵引操作期间机械地保持部分正在生长的晶体。 机械地保持晶体，使得晶体的重量W（kg）满足下式（1）：W <12.5×pi D2 / 4（1）其中D表示颈部的最小直径（mm） 。 这使得可以安全可靠地拉出重的单晶。

公开(公告)号：US6159438A

公开(公告)日：2000-12-12

申请号：US359078

申请日：1999-07-22

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322 ,  C01B33/26

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface.+-. 5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree. C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree. C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US6053975A

公开(公告)日：2000-04-25

申请号：US39830

申请日：1998-03-16

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/30 ,  C30B15/32 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/30 ,  Y10T117/1072

摘要： In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.

摘要翻译： 在晶体保持装置中，晶种与单晶的直圆柱形部分之间的波纹状部分通过在晶体与材料熔体接触的单晶生长过程中保持提升夹具的部分来保持，随后 在旋转时拉动。 在晶体保持装置中，在提升夹具的每个保持部分的末端安装有用于与晶体的波纹部分建立表面接触的附接构件。 因此，可以可靠地保持单晶，从而可以防止在牵引操作期间单晶的断裂和下降。

公开(公告)号：US5976246A

公开(公告)日：1999-11-02

申请号：US952481

申请日：1997-11-19

申请人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/305 ,  C30B29/36 ,  Y10S117/917

摘要： A MCZ method in which the single crystal is pulled while being rotated under the conditions where the crystal growth rate V.sub.1 (mm/min) and the crystal circumference velocity V.sub.2 (mm/min) satisfy the following relationships:0.4.ltoreq.V.sub.10.628.times.10.sup.4 .ltoreq.V.sub.2 .ltoreq.1.0.times.10.sup.4andV.sub.2 .ltoreq.-3.72.times.10.sup.4 V.sub.1 +4.35.times.10.sup.4It is possible to manufacture a silicon single crystal with a large diameter with the MCZ method without causing distortion.

摘要翻译： PCT No.PCT / JP97 / 00993 Sec。 371日期：1997年11月19日 102（e）1997年11月19日PCT PCT 1997年3月27日PCT公布。 第WO97 / 36025号公报 日期1997年10月2日在晶体生长速度V1（mm / min）和晶体圆周速度V2（mm / min）满足以下关系的条件下旋转单晶的MCZ法： /=V10.628x104

公开(公告)号：US5968266A

公开(公告)日：1999-10-19

申请号：US822088

申请日：1997-03-20

申请人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B33/04 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/14 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1088

摘要： An apparatus for manufacturing a single crystal of silicon includes a crucible, a heater, electrodes, and a magnet. In addition to a plurality of heat generating portions and two main electrode portions, the heater has two or more auxiliary electrode portions. Two or more heater support members having an insulating property are further provided so as to support the heater through the auxiliary electrode portions. The number of heat generating portions which may be present between a heater support member and an electrode and between heater support members if adjacent to each other is equal to or less than 4. Each generating portion of the heater has a thickness of 25 mm or more. This structure makes it possible to produce a single crystal of silicon without causing breakage of a heater, even if a large electric current flows through the heater, even if a magnetic field of a high intensity is applied to a silicon melt in the crucible, and even if the heater has a large diameter.

摘要翻译： 用于制造单晶硅的装置包括坩埚，加热器，电极和磁体。 除了多个发热部和两个主电极部之外，加热器还具有两个以上的辅助电极部。 进一步提供具有绝缘性能的两个或更多个加热器支撑构件，以便通过辅助电极部分支撑加热器。 可以存在于加热器支撑构件和电极之间以及加热器支撑构件之间的彼此相邻的发热部分的数量等于或小于4.加热器的每个产生部分的厚度为25mm以上 。 即使在坩埚中的硅熔体上施加高强度的磁场，即使大的电流流过加热器，也能够制造单晶硅，而不会导致加热器的断裂，并且 即使加热器具有大的直径。

公开(公告)号：US5968264A

公开(公告)日：1999-10-19

申请号：US109530

申请日：1998-07-02

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/22 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  H01L21/322

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置的范围+/- 5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在单晶生长期间，控制炉温，使得温度梯度差DELTA G（= Ge-Gc）不是 大于5℃/ cm，其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm） 在晶体的固 - 液界面附近，在1420℃至1350℃之间的晶体下降温度区域或硅熔点与1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US5948164A

公开(公告)日：1999-09-07

申请号：US140288

申请日：1998-08-25

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/32 ,  C30B29/06 ,  D04H1/4209 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/32 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1072

摘要： A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

摘要翻译： 用于根据切克劳斯基方法操作的晶体拉制装置中的晶种保持架。 在种子晶体保持器中，在晶种的表面和保持器的爪的接触表面之间或晶种的切口表面与保持器的插入物的接触表面之间设置耐热缓冲材料。 耐热缓冲材料选自碳纤维毡，玻璃纤维毡，金属纤维毡，或选自引起塑性变形的材料如Al。

公开(公告)号：US5871578A

公开(公告)日：1999-02-16

申请号：US915397

申请日：1997-08-20

申请人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

发明人： Eiichi Iino ,  Makoto Iida ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/24 ,  C30B15/30 ,  C30B29/06 ,  C30B33/04 ,  H01L21/208 ,  C30B15/32

CPC分类号： C30B15/30 ,  C30B15/305 ,  Y10S117/917

摘要： Oscillation of a growing crystal is suppressed in a Czochralski method when part of the growing crystal is mechanically held. Methods for holding and pulling a single crystal in a Czochralski method, wherein a seed crystal is pulled while rotating after the seed crystal is contacted with a raw material melt, part of the growing single crystal is mechanically held during pulling and the single crystal of heavy weight can be pulled regardless of mechanical strengths of the seed crystal or a neck portion thereof, wherein the raw material melt is under application of a magnetic field thereto when the growing crystal is mechanically held.

摘要翻译： 当生长晶体的一部分被机械保持时，生长晶体的振荡被抑制在切克劳斯基法（Czochralski method）中。 用Czochralski方法保持和拉取单晶的方法，其中在晶种与原料熔体接触之后，旋转时拉晶晶体，部分生长的单晶在拉伸期间被机械地保持，并且重结晶的单晶 无论种子晶体或其颈部的机械强度如何，均可以拉伸重量，其中当机械保持生长的晶体时，原料熔体施加磁场。

公开(公告)号：US5735951A

公开(公告)日：1998-04-07

申请号：US673590

申请日：1996-07-01

申请人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Koji Mizuishi ,  Hirotoshi Yamagishi

发明人： Eiichi Iino ,  Kiyotaka Takano ,  Masanori Kimura ,  Koji Mizuishi ,  Hirotoshi Yamagishi

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

CPC分类号： C30B15/00 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1068

摘要： A single crystal pulling apparatus which eliminates trouble caused by an isolation valve heated to a high temperature uses a heat insulation plate provided below the isolation valve. The heat insulation plate is operated synchronously with the opening or closing of the isolation valve. The heat insulation plate prevents hot gases from coming from the lower chamber from coming into direct contact with the isolation valve. The prevention of overheating of the isolation valve provides for smooth operation and growth of a good quality single crystal.

摘要翻译： 消除由加热到高温的隔离阀引起的麻烦的单晶拉制装置使用设置在隔离阀下方的隔热板。 绝热板与隔离阀的打开或关闭同步运行。 隔热板防止来自下部室的热气体与隔离阀直接接触。 防止隔离阀过热，提供良好的单晶的平稳运行和生长。