Acryl rubber foaming compositions and foamed acryl rubber
    11.
    发明授权
    Acryl rubber foaming compositions and foamed acryl rubber 失效
    丙烯酸橡胶发泡组合物和发泡丙烯酸橡胶

    公开(公告)号:US4952609A

    公开(公告)日:1990-08-28

    申请号:US476595

    申请日:1990-02-07

    IPC分类号: C08J9/06 C08J9/10

    CPC分类号: C08J9/10 C08J2333/04

    摘要: Acryl rubber foaming compositions comprising (A) an acrylic polymer prepared by copolymerizing an acrylate or methacrylate with a monomer having at least two aliphatic unsaturated bonds per molecule, (B) a pyrolytic organic foaming agent, and (C) an organic peroxide can be molded, cured and foamed into acryl rubber foams having improved heat insulation, heat resistance, weatherability, crack resistance, and oil resistance without a need for sulfur vulcanizer.

    摘要翻译: 丙烯酸酯橡胶发泡组合物,其包含(A)通过使丙烯酸酯或甲基丙烯酸酯与每分子具有至少两个脂肪族不饱和键的单体(B)热解有机发泡剂和(C)有机过氧化物共聚而制备的丙烯酸类聚合物, 固化并发泡成具有改善的隔热性,耐热性,耐候性,抗裂性和耐油性的丙烯酸橡胶泡沫,而不需要硫硫化剂。

    Method of manufacturing semiconductor device
    12.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US4675074A

    公开(公告)日:1987-06-23

    申请号:US761023

    申请日:1985-07-31

    摘要: The invention provides a chemical etching method for a semiconductor device, which comprises a step of forming a first layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x . The slope angle of etch face of the second layer depends on the mol fraction y of the second layer, and the slope angle of etch face of the first layer depends on the mol fraction y of the second layer and the mol fraction x of the first layer. These facts are best utilized in the invention so that the etch profile of the first layer may have a desired slope angle. By utilizing this chemical etching method it is possible to produce by chemical etching a semiconductor laser having a flat cavity facet perpendicular to a junction; it is also possible to provide an inner stripe type semiconductor laser having grooves whose side walls are perpendicular.

    摘要翻译: 本发明提供一种用于半导体器件的化学蚀刻方法,其包括形成具有表面(100)的第一层Ga 1-x Al x As(0 的方向化学蚀刻所述层的步骤。 第二层的蚀刻面的倾斜角取决于第二层的摩尔分数y,第一层的蚀刻面的倾斜角取决于第二层的摩尔分数y和第一层的摩尔分数x 层。 这些事实在本发明中最好地利用,使得第一层的蚀刻轮廓可以具有期望的倾斜角。 通过利用这种化学蚀刻方法,可以通过化学蚀刻具有垂直于结的平坦腔面的半导体激光器来制造; 也可以提供具有侧壁垂直的槽的内条型半导体激光器。

    Semiconductor laser
    13.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4651322A

    公开(公告)日:1987-03-17

    申请号:US754195

    申请日:1985-07-10

    CPC分类号: H01S5/2238 H01S5/028

    摘要: In a laser of such type that the distribution of the effective refractive index varies in a direction which is along the face of its active layer and perpendicular to the direction of the laser light transmission, thereby defining the active region to be between a pair of refractive index changing zones, the refractive indexes of a pair of end surfaces of a laser resonator (i.e. the active region) is made smaller than the intrinsic refractive indexes of the cleavage face of the active layer.

    摘要翻译: 在这种类型的激光器中,有效折射率的分布沿着其有源层的面并且垂直于激光传输的方向的方向变化,从而将有源区域限定在一对折射率 折射率变化区域,使激光谐振器(即有源区域)的一对端面的折射率小于有源层的解理面的固有折射率。

    Terraced substrate semiconductor laser
    14.
    发明授权
    Terraced substrate semiconductor laser 失效
    梯形衬底半导体激光器

    公开(公告)号:US4488306A

    公开(公告)日:1984-12-11

    申请号:US358104

    申请日:1982-03-15

    摘要: In a semiconductor laser of terraced substrate type, comprising on a terraced substrate (11) of n-GaAs substrate, a first clad layer (12) of n-GaAlAs, an active layer (13) of non-doped GaAlAs, a second clad layer (14) of p-GaAlAs and a current limiting layer (15) of n-GaAs, and further thereon a thick overriding layer (19) of n-GaAlAs with strip shaped opening (191), are epitaxially formed, and a current injection layer (16) is formed by Zn diffusion through the opening (191) in a manner one corner (161) of the injection front penetrate the current limiting layer (15) and reaches the second clad layer (14). By means of thick overriding layer (19), shortcircuiting between the active layer (13) and a p-side electrode (7) is prevented.

    摘要翻译: 在梯形衬底类型的半导体激光器中,包括在n-GaAs衬底的梯形衬底(11)上,n-GaAlAs的第一覆盖层(12),非掺杂GaAlAs的有源层(13),第二覆层 p-GaAlAs的层(14)和n-GaAs的限流层(15),并且还具有带条形开口(191)的n-GaAlAs厚的覆盖层(19),外延形成电流 注入层(16)以注入前沿的一个角部(161)穿过开口(191)的Zn扩散形成,穿过限流层(15)并到达第二覆层(14)。 通过厚覆盖层(19),防止有源层(13)和p侧电极(7)之间的短路。

    Semiconductor laser
    15.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4377865A

    公开(公告)日:1983-03-22

    申请号:US218442

    申请日:1980-12-19

    IPC分类号: H01S5/20 H01S5/223 H01S3/19

    摘要: On an n-type semiconductor substrate having a ridge part of stripe-shaped pattern, the following layers are formed by liquid phase sequential epitaxial growth: an undoped active layer; a p-type clad layer; and an n-type isolation layer. Thereafter, a Cd impurity is diffused in the isolation layer in a stripe-shaped pattern at the position above the ridge part, thereby forming a p+-type conduction region in the central part of the isolation layer. By forming the stripe-shaped ridge part on the substrate overriding the active layer, the injected current is effectively confined to the lasing region which is the thinner part of the active layer and is on the ridge part. Therefore the threshold current is decreased. Accordingly, the light lased in the active layer is effectively confined in a stripe-shaped lasing region thereof, and a stable transverse mode of lasing is obtainable.

    摘要翻译: 在具有条状图案的脊部的n型半导体衬底上,通过液相顺序外延生长形成以下层:未掺杂的有源层; p型覆层; 和n型隔离层。 此后,Cd隔离层在脊部上方的位置以条状图案扩散到隔离层,由此在隔离层的中央部形成p +型导电区​​域。 通过在衬底上形成条状脊部来覆盖有源层,注入的电流被有效地限制在作为有源层的较薄部分并且在脊部上的激光区域。 因此,阈值电流降低。 因此,在有源层中照射的光被有效地限制在条状的激光区域中,并且可以获得稳定的横模激光。

    Rubber compositions
    16.
    发明授权
    Rubber compositions 失效
    橡胶组合物

    公开(公告)号:US4201698A

    公开(公告)日:1980-05-06

    申请号:US937273

    申请日:1978-08-28

    摘要: Rubber compositions curable to rubbery elastomers by heating are provided, in which co-vulcanization of an organic rubber, e.g. natural rubber or an organic synthetic rubber and an organopolysiloxane rubber can be effected to a satisfactory degree, whereas such co-vulcanization in the prior art involves several difficult problems. The characterizing components in the rubber composition are the organopolysiloxane which has at least two functional units of either mercapto groups or aliphatically unsaturated linkages in the molecule and a specific organosilicon compound which has a polysulfide linkage and one or more silicon-bonded hydroxy groups or hydrolyzable atoms or groups in the molecule.

    摘要翻译: 提供了通过加热可固化到橡胶弹性体的橡胶组合物,其中有机橡胶的共硫化,例如, 天然橡胶或有机合成橡胶和有机聚硅氧烷橡胶可以达到令人满意的程度,而现有技术中的这种共硫化涉及几个困难的问题。 橡胶组合物中的表征组分是在分子中具有至少两个巯基或脂族不饱和键的官能单元的有机聚硅氧烷和具有多硫键和一个或多个与硅键合的羟基或可水解原子的特定有机硅化合物 或分子中的基团。

    Silicone rubber compositions
    17.
    发明授权
    Silicone rubber compositions 失效
    硅橡胶组合物

    公开(公告)号:US4039503A

    公开(公告)日:1977-08-02

    申请号:US658124

    申请日:1976-02-13

    申请人: Kunio Itoh

    发明人: Kunio Itoh

    摘要: Silicone rubber compositions comprising a diorganopolysiloxane gum, an inorganic filler, a vinyl-containing organopolysiloxane resin, polyester fibers cut in a specific length, an amino- or mercapto-containing organosilane or organopolysiloxane as a coupling agent, and an organic peroxide as a curing agent. The novel compositions are capable of giving excellent mechanical properties, especially tear strength, to cured products or silicone elastomers, their other properties being as good as the conventional silicone rubber elastomers.

    摘要翻译: 包含二有机聚硅氧烷胶,无机填料,含乙烯基的有机聚硅氧烷树脂,特定长度切割的聚酯纤维,含氨基或含巯基的有机硅烷或有机聚硅氧烷作为偶联剂的硅橡胶组合物和作为固化剂的有机过氧化物 。 该新型组合物能够赋予固化产物或硅氧烷弹性体优异的机械性能,特别是撕裂强度,它们的其它性能与常规硅橡胶弹性体一样好。

    Semiconductor laser
    18.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4034311A

    公开(公告)日:1977-07-05

    申请号:US671948

    申请日:1976-03-30

    IPC分类号: H01L33/00 H01S5/323 H01S3/00

    CPC分类号: H01S5/32308 H01L33/0025

    摘要: Double-hetero-structure injection laser can be improved to have low threshold current in room-temperature continuous-wave operation. The improvement is obtained in one case wherein an n-type Ga.sub.1.sub.-y Al.sub.y As region (1.gtoreq.y>0) is first formed, a Ga.sub.1.sub.-z In.sub.z As is grown thereon as an active region and a p-type Ga.sub.1.sub.-y Al.sub.y As region is then formed on the active region and the value of z is so selected as to make the lattice constants of the active region smaller than those of the first and third regions.

    摘要翻译: 双异质结构注入激光器可以在室温连续波操作中得到改善,具有低阈值电流。 在首先形成n型Ga1-yAlyAs区域(1> / = y> 0)的一种情况下,在其上生长Ga1-zInzAs作为有源区并且p型Ga1-yAlyAs区为 然后形成在有源区上,并且选择z的值使得有源区的晶格常数小于第一和第三区的晶格常数。

    Heat-curable organopolysiloxane compositions
    19.
    发明授权
    Heat-curable organopolysiloxane compositions 失效
    可热固化的有机聚硅氧烷组合物

    公开(公告)号:US3992355A

    公开(公告)日:1976-11-16

    申请号:US542823

    申请日:1975-01-21

    摘要: Heat-curable organopolysiloxane compositions comprising a diorganopolysiloxane having at least two vinyl groups per molecule and a viscosity exceeding 100 centistokes at 25.degree. C, an inorganic filler, an organohydrogenpolysiloxane containing at least two Si--H linkages per molecule, a platinum catalyst, a hydrazine compound and optionally, an organic peroxide, which have an improved storage stability and allow for imparting an excellent flame retardancy and mechanical strength to the cured material.

    摘要翻译: 包含每分子具有至少两个乙烯基并在25℃下粘度超过100厘沲的二有机聚硅氧烷,无机填料,每分子含有至少两个Si-H键的有机氢聚硅氧烷,铂催化剂,肼 化合物和任选的有机过氧化物,其具有改进的储存稳定性并且允许赋予固化材料优异的阻燃性和机械强度。

    Silicone compositions containing platinum-containing material and
manganese carbonate
    20.
    发明授权
    Silicone compositions containing platinum-containing material and manganese carbonate 失效
    含有含铂材料和碳酸锰的硅氧烷组合物

    公开(公告)号:US3936476A

    公开(公告)日:1976-02-03

    申请号:US539428

    申请日:1975-01-08

    IPC分类号: C08K3/26 C08L83/04

    CPC分类号: C08K3/26

    摘要: Silicone compositions consisting essentially of 100 parts by weight organopolysiloxane, 20-200 parts by weight finely divided silica filler, 5-100 parts by weight finely divided manganese carbonate, and 5-1,000 ppm platinum alone or in a platinum containing material, based on the weight of the organopolysiloxane. Finished products prepared by molding the compositions exhibit particularly excellent flame-proofing and improved degrees of permanent strain caused by stress. Particularly preferred are silicone compositions with 5-100 parts by weight of finely divided manganese carbonate having a particle size from about 1.mu. to about 50.mu..

    摘要翻译: 基于100重量份有机聚硅氧烷,20-200重量份细分二氧化硅填料,5-100重量份细碎碳酸锰和5-1,000ppm铂单独或含铂材料组成的硅氧烷组合物,基于 有机聚硅氧烷的重量。 通过模塑组合物制备的成品显示出特别优异的阻燃性和由应力引起的改善的永久变形程度。 特别优选的是具有5-100重量份粒度为约1至约50微米的细碎碳酸锰的硅氧烷组合物。