公开(公告)号：US20120246933A1

公开(公告)日：2012-10-04

申请号：US13524254

申请日：2012-06-15

申请人： Joon Kyoo Park ,  Jin Seok Lee ,  Kyeong Lak Jeon ,  Jung Min Suh ,  Gi-Jun Gwon ,  Nam Gyu Park ,  Kyong Bo Eom ,  Jin Sun Kim ,  Dong Geun Ha ,  Kyoung Joo Kim

发明人： Joon Kyoo Park ,  Jin Seok Lee ,  Kyeong Lak Jeon ,  Jung Min Suh ,  Gi-Jun Gwon ,  Nam Gyu Park ,  Kyong Bo Eom ,  Jin Sun Kim ,  Dong Geun Ha ,  Kyoung Joo Kim

IPC分类号： B23P17/00

CPC分类号： G21C3/331 ,  G21C3/3315 ,  G21C21/00 ,  Y02E30/40 ,  Y10T29/494 ,  Y10T29/49432

摘要： A top nozzle is provided. The top nozzle can include a coupling plate, a perimeter wall and a hold-down spring unit. The coupling plate can be coupled to a guide thimble of the nuclear fuel assembly. The perimeter wall can protrude upwards from the perimeter of the coupling plate. A spring clamp can be provided on the upper surface of the perimeter wall. The hold-down spring unit can be mounted to the upper surface of the perimeter wall in such a way to couple a corresponding end of the hold-down spring unit to the spring clamp. A fastening pin hole can be vertically formed through an upper surface of the spring clamp. A spring insert hole into which the hold-down spring unit can be inserted and formed by electro-discharge machining in an insert direction of the hold-down spring.

摘要翻译： 提供顶部喷嘴。 顶部喷嘴可以包括联接板，周边壁和压紧弹簧单元。 联接板可以联接到核燃料组件的导向套管。 周边壁可以从联接板的周边向上突出。 可以在周壁的上表面上设置弹簧夹。 压紧弹簧单元可以以这样的方式安装到周壁的上表面，以将压紧弹簧单元的相应端部联接到弹簧夹。 紧固销孔可以通过弹簧夹的上表面垂直地形成。 弹簧插入孔，压紧弹簧单元可以通过放电加工在压紧弹簧的插入方向上插入和形成。

公开(公告)号：US20060152164A1

公开(公告)日：2006-07-13

申请号：US11208728

申请日：2005-08-23

申请人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

发明人： Yung Hee Lee ,  Yun Kwang Jeon ,  Jin Seok Lee

IPC分类号： H01J1/46

CPC分类号： H01J37/08 ,  H01J27/024

摘要： An ion beam extractor controls a direction and an intensity of ion beams by adjusting a voltage applied to a grid having slits formed therein, thereby enhancing uniformity of an etching rate of a wafer, leading to an increase of productivity of semiconductor diodes. The ion beam extractor comprises an ion source to produce an ion beam and at least one grid located at a rear end of the ion source in a progressing path of the ion beam produced by the ion source to adjust a direction of the ion beam by controlling a voltage applied to the at least one grid.

摘要翻译： 离子束提取器通过调节施加到其上形成有狭缝的栅格的电压来控制离子束的方向和强度，从而提高晶片的蚀刻速率的均匀性，从而提高半导体二极管的生产率。 离子束提取器包括离子源以产生离子束和位于离子源的后端处的离子源的至少一个格栅，在由离子源产生的离子束的前进路径中，通过控制离子束来调节离子束的方向 施加到所述至少一个栅格的电压。

公开(公告)号：US06900867B2

公开(公告)日：2005-05-31

申请号：US09735519

申请日：2000-12-14

申请人： Jin Seok Lee

发明人： Jin Seok Lee

IPC分类号： G02F1/1335 ,  G02F1/1343 ,  G02F1/133

CPC分类号： G02F1/134363 ,  G02F1/133514

摘要： In a method of manufacturing a color filter for an in-plane switching mode liquid crystal display a black matrix for light-shielding and color filter layers of red, green and blue are formed on a glass substrate and an overcoat layer is coated thereon for minimizing a stepped difference of an overlapped part between the black matrix and the color filter layers, the overcoat layer being formed of a non-exposing type material.

摘要翻译： 在制造面内切换模式液晶显示器的滤色器的方法中，在玻璃基板上形成用于遮光的黑色矩阵和用​​于红色，绿色和蓝色的滤色器层，并且在其上涂覆外涂层以最小化 黑色矩阵和滤色器层之间的重叠部分的阶梯差，外涂层由非曝光型材料形成。

公开(公告)号：US5828709A

公开(公告)日：1998-10-27

申请号：US525092

申请日：1995-09-08

申请人： Jin Seok Lee

发明人： Jin Seok Lee

IPC分类号： H04B7/15 ,  H03L7/087 ,  H04L27/00 ,  H04L27/227 ,  H04L27/06

CPC分类号： H04L27/2273 ,  H03L7/087 ,  H04L2027/0057 ,  H04L2027/0065

摘要： An apparatus and a method for improving the stability of the transmitting frequency by using a costas loop section in a communication system of a half duplex transmitting method is disclosed, in which a receiving terminal is provided with an A/D converter, a D/A converter, a switching circuit, and a central processing unit, and thus, during a data transmission, a reference frequency is extracted through the costas loop section without installing a separate reference frequency extracting facility, thereby improving the stability of the transmitting frequency. In the conventional technique, in forming a reference frequency for a transmitting frequency, additional devices such as a pilot signal detector, a transmission reference frequency oscillator and the like are required, with the result that the cost for establishing the system becomes high, and that too much man hours and too many additional components are required. However, in the present invention, low cost facilities such as A/D and D/A converters, a switch circuit and a central processing unit are installed to the costas loop of the currently used receiving terminal, so that a transmitting reference frequency can be extracted from the data carrying carrier waves through the costas loop without using the high cost conventional reference frequency extracting facility, thereby improving the stability of the transmitting frequency.

摘要翻译： 公开了一种通过在半双工发送方式的通信系统中使用costas环路部分来提高发送频率的稳定性的装置和方法，其中接收终端设置有A / D转换器，D / A 转换器，开关电路和中央处理单元，因此，在数据传输期间，通过Costas环路部分提取参考频率，而不安装单独的参考频率提取设备，从而提高发射频率的稳定性。 在现有技术中，在形成发送频率的基准频率的情况下，需要诸如导频信号检测器，发送基准频率振荡器等附加装置，结果是建立系统的成本变高，并且 太多的工时，需要太多的附加部件。 然而，在本发明中，诸如A / D和D / A转换器的低成本设施，开关电路和中央处理单元安装在当前使用的接收终端的成本环中，使得发送参考频率可以 从携带载波的数据通过costas循环提取而不使用高成本的常规参考频率提取设备，从而提高发射频率的稳定性。

公开(公告)号：US08997524B2

公开(公告)日：2015-04-07

申请号：US13464488

申请日：2012-05-04

申请人： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

发明人： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

IPC分类号： C01B33/037 ,  C30B13/22

CPC分类号： C01B33/037 ,  B01J6/007 ,  B01J19/085 ,  B01J2219/00135 ,  C30B13/22

摘要： Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

摘要翻译： 制造高纯度多晶硅的方法和装置。 该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。 单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。 起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

公开(公告)号：US08794035B2

公开(公告)日：2014-08-05

申请号：US13464416

申请日：2012-05-04

申请人： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

发明人： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

IPC分类号： C01B33/037 ,  C30B13/22

CPC分类号： C01B33/037 ,  C30B11/003 ,  C30B13/22 ,  C30B29/06

摘要： Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

摘要翻译： 用于制造高纯度多晶硅的装置和方法。 该装置包括保持真空气氛的真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 放置在对应于第一电子枪的第一电子束照射区域上的硅熔融单元，其中粉状原料硅由第一电子束放置和熔化; 以及放置在与第二电子枪相对应的第二电子束照射区域上的单向凝固单元，并且经由流道连接到硅熔融单元。 单向凝固单元在其下部形成有冷却通道，并且在其中设置有向下驱动的起始块。

公开(公告)号：US08758513B2

公开(公告)日：2014-06-24

申请号：US11639224

申请日：2006-12-15

申请人： Jin Seok Lee ,  Hyuk Sang Yoon ,  Hwan Kyu Yoo ,  Byeong Eok Hwang

发明人： Jin Seok Lee ,  Hyuk Sang Yoon ,  Hwan Kyu Yoo ,  Byeong Eok Hwang

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67173 ,  C23C14/50 ,  C23C14/568

摘要： A processing apparatus includes a loading chamber; a buffer chamber connected to the loading chamber; a first process chamber connected to the buffer chamber; and an unloading chamber connected to the first process chamber, wherein a processing path through the processing apparatus is a forward in-line path in a direction through the loading chamber, the buffer chamber, the first process chamber, and the unloading chamber.

摘要翻译： 一种处理装置，包括装载室; 连接到所述装载室的缓冲室; 连接到缓冲室的第一处理室; 以及连接到所述第一处理室的卸载室，其中通过所述处理装置的处理路径是沿着穿过所述装载室，所述缓冲室，所述第一处理室和所述卸载室的方向的前向一线路径。

公开(公告)号：US20130291596A1

公开(公告)日：2013-11-07

申请号：US13464488

申请日：2012-05-04

申请人： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

发明人： Bo Yun Jang ,  Jin Seok Lee ,  Joon Soo Kim ,  Young Soo Ahn

IPC分类号： C01B33/02 ,  B01J19/08 ,  C01B33/037

CPC分类号： C01B33/037 ,  B01J6/007 ,  B01J19/085 ,  B01J2219/00135 ,  C30B13/22

摘要： Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

摘要翻译： 制造高纯度多晶硅的方法和装置。 该装置包括真空室; 第一和第二电子枪设置在真空室的上侧以将电子束照射到真空室中; 硅熔融单元，其放置在对应于第一电子枪的第一电子束照射区域上，并且通过第一电子束将粉末原料硅熔化; 以及放置在对应于第二电子枪的第二电子束照射区域上的单向凝固单元。 单向凝固单元在其中设置有向下驱动的起始块，以沿向下方向转移熔融硅，并在其下侧形成有冷却通道。 起始块包括具有连接到虚拟棒的上部的硅按钮的虚拟棒。

公开(公告)号：US20130263777A1

公开(公告)日：2013-10-10

申请号：US13459109

申请日：2012-04-28

申请人： Jin Seok Lee ,  Bo Yun Jang ,  Joon Soo Kim ,  Young Soo Ahn

发明人： Jin Seok Lee ,  Bo Yun Jang ,  Joon Soo Kim ,  Young Soo Ahn

IPC分类号： C30B15/06 ,  C30B15/30 ,  C30B15/10

CPC分类号： C30B15/06 ,  C30B28/10 ,  C30B29/06 ,  C30B35/002 ,  Y10T117/1048

摘要： There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material.

摘要翻译： 公开了一种用于制造硅基板的装置，其包括坩埚部分，从坩埚部分的出口延伸的模制部分，模制部分包括形成硅基板的模制空间和插入模制空间中的虚拟棒 从模制部件的预定部分，其中虚拟棒由单晶材料形成。

公开(公告)号：US08432443B2

公开(公告)日：2013-04-30

申请号：US12918535

申请日：2008-04-03

申请人： Yun Young Nam ,  Kyoung Su Park ,  Jin Seok Lee ,  Sang Jin Hong ,  We Duke Cho

发明人： Yun Young Nam ,  Kyoung Su Park ,  Jin Seok Lee ,  Sang Jin Hong ,  We Duke Cho

IPC分类号： H04N7/18

CPC分类号： G06T7/285 ,  G06T7/246 ,  G06T7/73 ,  G06T2207/10021 ,  G06T2207/30204

摘要： There is provided a method of localizing an object comprising projecting an object located on an object plane and a reference point corresponding thereto on a virtual viewable plane and an actual camera plane; estimating coordinates of the reference point; and prescribing a relationship between a location of the object and the coordinates of the reference point.

摘要翻译： 提供了一种定位对象的方法，包括将虚拟可视平面和实际相机平面上的物体平面上的对象和与其对应的参考点投影; 估计参考点的坐标; 并且规定对象的位置与参考点的坐标之间的关系。