公开(公告)号：US11588027B2

公开(公告)日：2023-02-21

申请号：US17131284

申请日：2020-12-22

Applicant: LG Display Co., Ltd.

Inventor： InTak Cho ,  Jiyong Noh ,  Jaeman Jang ,  PilSang Yun ,  Jeyong Jeon

IPC: G09G3/32 ,  H01L29/40 ,  H01L27/12 ,  H01L29/786 ,  H01L21/765 ,  H01L29/66 ,  H01L21/02

Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.

公开(公告)号：US11121260B2

公开(公告)日：2021-09-14

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11107870B2

公开(公告)日：2021-08-31

申请号：US16221203

申请日：2018-12-14

Applicant: LG DISPLAY CO., LTD.

Inventor： Saeroonter Oh ,  Jungsun Beak ,  Seungmin Lee ,  Juheyuck Baeck ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3208 ,  H01L51/52

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.