公开(公告)号：US20150243685A1

公开(公告)日：2015-08-27

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板的第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极 以及第一漏电极，设置在所述基板的第二区域的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和 第二漏电极，设置在基板的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅极电极和第二栅电极之上的氧化物层， 氧化物半导体层。