公开(公告)号：US20170092178A1

公开(公告)日：2017-03-30

申请号：US15277194

申请日：2016-09-27

Applicant: LG Display Co., Ltd.

Inventor： Junho LEE ,  Youngjang LEE

IPC: G09G3/20 ,  G09G3/3266 ,  G09G3/3225 ,  G09G3/3275 ,  H01L27/32 ,  H01L29/786

CPC classification number: G09G3/2018 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0278 ,  G09G2310/0297 ,  G09G2310/067 ,  G09G2310/08 ,  G09G2320/0214 ,  G09G2320/0252 ,  G09G2320/045 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2340/16 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a display device and method of driving the same. A display device includes: a display panel including: data lines and gate lines intersecting each other, and pixels in a matrix, a timing controller configured to reduce a refresh rate of the pixels in a low-speed driving mode compared to a refresh rate of the pixels in a normal driving mode, and a display panel driving circuit configured to: write data to the display panel, write data to the pixels during N driving frame periods within a unit of time, that is set to the refresh rate of the low-speed driving mode, under the control of the timing controller, where “N” is a positive integer of 2 to 4, wherein the pixels are configured to hold a voltage of previous data for a remaining time other than the N driving frame periods of the unit of time.

公开(公告)号：US20150243683A1

公开(公告)日：2015-08-27

申请号：US14629554

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 一种显示器包括：第一薄膜晶体管，第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极和第一漏电极，第二薄膜晶体管， 第二薄膜晶体管，包括：第二栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在氮化物层上包括氮化物层和氧化物层的中间绝缘层， 中间绝缘层设置在第一栅电极和第二栅电极上以及氧化物半导体层下方，以及设置在氧化物半导体层上的蚀刻停止层。