公开(公告)号：US09515212B2

公开(公告)日：2016-12-06

申请号：US14605394

申请日：2015-01-26

Applicant: LG Electronics Inc.

Inventor： Kyoungsoo Lee ,  Seongeun Lee

IPC: H01L31/06 ,  H01L31/0376 ,  H01L31/04 ,  H01L27/142 ,  H01L31/068 ,  H01L31/18 ,  H01L25/04 ,  H01L31/0224

CPC classification number: H01L31/0376 ,  H01L25/042 ,  H01L27/142 ,  H01L31/022425 ,  H01L31/04 ,  H01L31/06 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

Abstract: A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.

Abstract translation: 一种制造太阳能电池的方法包括：制备具有第一导电型掺杂剂的半导体衬底; 将前非晶化元件离子注入半导体衬底的前表面以形成非晶层; 以及通过将第二导电型掺杂剂离子注入到所述半导体衬底的前表面中形成发射极层。 然后该方法还包括热处理层以激活第二导电型掺杂剂。 该方法还包括通过离子注入第一导电型掺杂剂在半导体衬底的背面形成背表面场层。

公开(公告)号：US10109511B2

公开(公告)日：2018-10-23

申请号：US14741286

申请日：2015-06-16

Applicant: LG ELECTRONICS INC.

Inventor： Kyoungsoo Lee ,  Minho Choi ,  Jinhyung Lee ,  Gyeayoung Kwag ,  Sangwook Park

IPC: F27B9/06 ,  H01L21/67 ,  H05B3/00 ,  H01L21/677 ,  H01L31/18

Abstract: A post-processing apparatus of a solar cell carries out a post-processing operation including a main period for heat-treating a solar cell including a semiconductor substrate while providing light to the solar cell. The post-processing apparatus includes a main section to carry out the main period. The main section includes a first heat source unit to provide heat to the semiconductor substrate and a light source unit to provide light to the semiconductor substrate. The first heat source unit and the light source unit are positioned in the main section. The light source unit includes a light source constituted by a plasma lighting system (PLS).